图片 | 型号 | 库存 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)(最大值) | 电流 - 平均整流(Io) | 电压 - 正向 (Vf)(最大值)@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
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1N5805USDIODE GEN PURP 135V 1A D-5A Microchip Technology |
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- | SQ-MELF, A | Bulk | Active | Standard | 135 V | 1A | 875 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 1 µA @ 125 V | 25pF @ 10V, 1MHz | - | - | Surface Mount | D-5A | -65°C ~ 175°C |
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JANTXV1N5550DIODE GEN PURP 200V 5A AXIAL Microchip Technology |
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![]() 规格书 |
- | B, Axial | Bulk | Active | Standard | 200 V | 5A | 1.2 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 1 µA @ 200 V | - | Military | MIL-PRF-19500/420 | Through Hole | B, Axial | -65°C ~ 175°C |
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JAN1N5189/TRDIODE GEN PURP 500V 3A B AXIAL Microchip Technology |
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- | B, Axial | Tape & Reel (TR) | Active | Standard | 500 V | 3A | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 300 ns | 2 µA @ 500 V | - | Military | MIL-PRF-19500/424 | Through Hole | B, Axial | -65°C ~ 175°C |
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JAN1N5188/TRDIODE GEN PURP 400V 3A AXIAL Microchip Technology |
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![]() 规格书 |
- | B, Axial | Tape & Reel (TR) | Active | Standard | 400 V | 3A | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 250 ns | 2 µA @ 400 V | - | Military | MIL-PRF-19500/424 | Through Hole | B, Axial | -65°C ~ 175°C |
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JAN1N3595AUSDIODE GEN PURP 125V 150MA DO35 Microchip Technology |
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- | DO-204AH, DO-35, Axial | Bulk | Active | Standard | 125 V | 150mA | 920 mV @ 100 mA | Small Signal =< 200mA (Io), Any Speed | 3 µs | 2 nA @ 125 V | - | Military | MIL-PRF-19500/241 | Through Hole | DO-204AH (DO-35) | -65°C ~ 175°C |
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JAN1N3595USDIODE GEN PURP 125V 4A B SQ-MELF Microchip Technology |
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- | SQ-MELF, B | Bulk | Active | Standard | 125 V | 4A | 1 V @ 200 mA | Standard Recovery >500ns, > 200mA (Io) | 3 µs | - | - | Military | MIL-PRF-19500/241 | Surface Mount | B, SQ-MELF | -65°C ~ 150°C |
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JANTXV1N5186DIODE GEN PURP 100V 3A AXIAL Microchip Technology |
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![]() 规格书 |
- | B, Axial | Bulk | Active | Standard | 100 V | 3A | 1.5 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | - | 2 µA @ 100 V | - | Military | MIL-PRF-19500/424 | Through Hole | B, Axial | -65°C ~ 175°C |
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JANTXV1N5619USDIODE GEN PURP 600V 1A D-5A Microchip Technology |
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![]() 规格书 |
- | SQ-MELF, A | Bulk | Active | Standard | 600 V | 1A | 1.6 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 250 ns | 500 nA @ 600 V | - | Military | MIL-PRF-19500/429 | Surface Mount | D-5A | -65°C ~ 175°C |
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1N6641USDIODE GEN PURP 50V 300MA D-5D Microchip Technology |
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![]() 规格书 |
- | SQ-MELF, D | Bulk | Active | Standard | 50 V | 300mA | 1.1 V @ 200 mA | Fast Recovery =< 500ns, > 200mA (Io) | 5 ns | 100 nA @ 50 V | - | - | - | Surface Mount | D-5D | -65°C ~ 175°C |
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JANTX1N5802DIODE GEN PURP 50V 1A AXIAL Microchip Technology |
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- | A, Axial | Bulk | Active | Standard | 50 V | 1A | 875 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 1 µA @ 50 V | 25pF @ 10V, 1MHz | Military | MIL-PRF-19500/477 | Through Hole | A, Axial | -65°C ~ 175°C |