图片 | 型号 | 库存 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)(最大值) | 电流 - 平均整流(Io) | 电压 - 正向 (Vf)(最大值)@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
JANTX1N6638US/TRDIODE GP 125V 300MA B SQ-MELF Microchip Technology |
0 |
|
- |
- | SQ-MELF, B | Tape & Reel (TR) | Active | Standard | 125 V | 300mA | 1.1 V @ 200 mA | Fast Recovery =< 500ns, > 200mA (Io) | 4.5 ns | - | - | Military | MIL-PRF-19500/578 | Surface Mount | B, SQ-MELF | -65°C ~ 175°C |
![]() |
JANTX1N6638U/TRDIODE GEN PURP 125V 300MA D-5B Microchip Technology |
0 |
|
- |
- | SQ-MELF, E | Tape & Reel (TR) | Active | Standard | 125 V | 300mA | 1.1 V @ 200 mA | Fast Recovery =< 500ns, > 200mA (Io) | 4.5 ns | 500 nA @ 125 V | - | Military | MIL-PRF-19500/578 | Surface Mount | D-5B | -65°C ~ 175°C |
![]() |
1N5623E3HERMETICALLY SEALED GLASS RECTIF Microchip Technology |
0 |
|
- |
- | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
![]() |
1N5623/TRDIODE GEN PURP 1KV 1A Microchip Technology |
0 |
|
![]() 规格书 |
- | A, Axial | Tape & Reel (TR) | Active | Standard | 1000 V | 1A | 1.6 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 500 ns | 500 nA @ 1 V | 15pF @ 12V, 1MHz | - | - | Through Hole | A, Axial | -65°C ~ 175°C |
![]() |
1N5807/TRDIODE GEN PURP 50V 3A Microchip Technology |
0 |
|
![]() 规格书 |
- | B, Axial | Tape & Reel (TR) | Active | Standard | 50 V | 3A | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 50 V | 60pF @ 10V, 1MHz | - | - | Through Hole | B, Axial | -65°C ~ 175°C |
![]() |
1N4245USDIODE GEN PURP 200V 1A MELF-1 Microchip Technology |
0 |
|
- |
- | SQ-MELF | Bulk | Active | Standard | 200 V | 1A | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 5 µs | 1 µA @ 200 V | - | - | - | Surface Mount | MELF-1 | -65°C ~ 175°C |
![]() |
1N4247USDIODE GEN PURP 600V 1A MELF-1 Microchip Technology |
0 |
|
- |
- | SQ-MELF | Bulk | Active | Standard | 600 V | 1A | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 5 µs | 1 µA @ 600 V | - | - | - | Surface Mount | MELF-1 | -65°C ~ 175°C |
![]() |
1N4249USDIODE GEN PURP 1KV 1A MELF-1 Microchip Technology |
0 |
|
- |
- | SQ-MELF | Bulk | Active | Standard | 1000 V | 1A | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 5 µs | 1 µA @ 1000 V | - | - | - | Surface Mount | MELF-1 | -65°C ~ 175°C |
![]() |
1N4246USDIODE GEN PURP 400V 1A MELF-1 Microchip Technology |
0 |
|
- |
- | SQ-MELF | Bulk | Active | Standard | 400 V | 1A | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 5 µs | 1 µA @ 400 V | - | - | - | Surface Mount | MELF-1 | -65°C ~ 175°C |
![]() |
1N4248USDIODE GEN PURP 800V 1A MELF-1 Microchip Technology |
0 |
|
- |
- | SQ-MELF | Bulk | Active | Standard | 800 V | 1A | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 5 µs | 1 µA @ 800 V | - | - | - | Surface Mount | MELF-1 | -65°C ~ 175°C |