图片 | 型号 | 库存 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)(最大值) | 电流 - 平均整流(Io) | 电压 - 正向 (Vf)(最大值)@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
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IDW40G65C5FKSA1DIODE SIL CARB 650V 40A TO247-3 Infineon Technologies |
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![]() 规格书 |
CoolSiC™+ | TO-247-3 | Bulk | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 650 V | 40A | 1.7 V @ 40 A | No Recovery Time > 500mA (Io) | 0 ns | 1.4 mA @ 650 V | 1140pF @ 1V, 1MHz | - | - | Through Hole | PG-TO247-3-1 | -55°C ~ 175°C |
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IDH20G65C5XKSA1DIODE SIL CARB 650V 20A TO220-2 Infineon Technologies |
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![]() 规格书 |
CoolSiC™+ | TO-220-2 | Tube | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 650 V | 20A | 1.7 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 700 µA @ 650 V | 590pF @ 1V, 1MHz | - | - | Through Hole | PG-TO220-2-2 | -55°C ~ 175°C |
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IDW10G65C5FKSA1DIODE SIL CARB 650V 10A TO247-3 Infineon Technologies |
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![]() 规格书 |
CoolSiC™+ | TO-247-3 | Tube | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 400 µA @ 650 V | 300pF @ 1V, 1MHz | - | - | Through Hole | PG-TO247-3-41 | -55°C ~ 175°C |
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IDH03G65C5XKSA1DIODE SIL CARB 650V 3A TO220-2-2 Infineon Technologies |
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![]() 规格书 |
CoolSiC™+ | TO-220-2 | Tube | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 650 V | 3A | 1.7 V @ 3 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 600 V | 100pF @ 1V, 1MHz | - | - | Through Hole | PG-TO220-2-2 | -55°C ~ 175°C |
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IDH06G65C5XKSA1DIODE SIL CARB 650V 6A TO220-2-2 Infineon Technologies |
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![]() 规格书 |
CoolSiC™+ | TO-220-2 | Tube | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 650 V | 6A | 1.7 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 210 µA @ 650 V | 190pF @ 1V, 1MHz | - | - | Through Hole | PG-TO220-2-2 | -55°C ~ 175°C |
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IDH04G65C5XKSA1DIODE SIL CARB 650V 4A TO220-2-2 Infineon Technologies |
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![]() 规格书 |
CoolSiC™+ | TO-220-2 | Tube | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 650 V | 4A | 1.7 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 140 µA @ 650 V | 130pF @ 1V, 1MHz | - | - | Through Hole | PG-TO220-2-2 | -55°C ~ 175°C |
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IDW12G65C5FKSA1DIODE SIL CARB 650V 12A TO247-3 Infineon Technologies |
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![]() 规格书 |
CoolSiC™+ | TO-247-3 | Tube | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 650 V | 12A | 1.7 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 500 µA @ 650 V | 360pF @ 1V, 1MHz | - | - | Through Hole | PG-TO247-3-41 | -55°C ~ 175°C |
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IDW16G65C5FKSA1DIODE SIL CARB 650V 16A TO247-3 Infineon Technologies |
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![]() 规格书 |
CoolSiC™+ | TO-247-3 | Tube | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 650 V | 16A | 1.7 V @ 16 A | No Recovery Time > 500mA (Io) | 0 ns | 600 µA @ 650 V | 470pF @ 1V, 1MHz | - | - | Through Hole | PG-TO247-3-1 | -55°C ~ 175°C |
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IDW20G65C5FKSA1DIODE SIL CARB 650V 20A TO247-3 Infineon Technologies |
0 |
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![]() 规格书 |
CoolSiC™+ | TO-247-3 | Tube | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 650 V | 20A | 1.7 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 700 µA @ 650 V | 590pF @ 1V, 1MHz | - | - | Through Hole | PG-TO247-3-1 | -55°C ~ 175°C |
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IDH09G65C5XKSA1DIODE SIL CARB 650V 9A TO220-2-2 Infineon Technologies |
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![]() 规格书 |
CoolSiC™+ | TO-220-2 | Tube | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 650 V | 9A | 1.7 V @ 9 A | No Recovery Time > 500mA (Io) | 0 ns | 310 µA @ 650 V | 270pF @ 1V, 1MHz | - | - | Through Hole | PG-TO220-2-2 | -55°C ~ 175°C |