图片 | 型号 | 库存 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)(最大值) | 电流 - 平均整流(Io) | 电压 - 正向 (Vf)(最大值)@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
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D1381S45TXPSA1DIODE GEN PURP 4.5KV 1630A Infineon Technologies |
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![]() 规格书 |
- | DO-200AD | Tray | Active | Standard | 4500 V | 1630A | 2.6 V @ 2500 A | Standard Recovery >500ns, > 200mA (Io) | - | 100 mA @ 4500 V | - | - | - | Chassis Mount | - | -40°C ~ 140°C |
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D4201N22TXPSA1DIODE GEN PURP 2.2KV 6010A Infineon Technologies |
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![]() 规格书 |
- | DO-200AE | Tray | Active | Standard | 2200 V | 6010A | 1 V @ 4000 A | Standard Recovery >500ns, > 200mA (Io) | - | 200 mA @ 2200 V | - | - | - | Chassis Mount | - | -40°C ~ 160°C |
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D1461S45TXPSA1DIODE GEN PURP 1720A D10026K-1 Infineon Technologies |
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![]() 规格书 |
- | DO-200, Variant | Tray | Active | Standard | - | 1720A | - | Standard Recovery >500ns, > 200mA (Io) | - | 200 mA @ 4500 V | - | - | - | Chassis Mount | BG-D10026K-1 | -40°C ~ 140°C |
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D3041N65TXPSA1DIODE GEN PURP 6.5KV 4090A Infineon Technologies |
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![]() 规格书 |
- | DO-200AE | Tray | Active | Standard | 6500 V | 4090A | 1.7 V @ 4000 A | Standard Recovery >500ns, > 200mA (Io) | - | 100 mA @ 6500 V | - | - | - | Chassis Mount | - | -40°C ~ 160°C |
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D3001N68TXPSA1DIODE GEN PURP 6.8KV 3910A Infineon Technologies |
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![]() 规格书 |
- | DO-200AE | Tray | Active | Standard | 6800 V | 3910A | 1.7 V @ 4000 A | Standard Recovery >500ns, > 200mA (Io) | - | 100 mA @ 6800 V | - | - | - | Chassis Mount | - | -40°C ~ 160°C |
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D2601N85TXPSA1DIODE GEN PURP 8.5KV 3040A Infineon Technologies |
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![]() 规格书 |
- | DO-200AE | Tray | Active | Standard | 8500 V | 3040A | - | Standard Recovery >500ns, > 200mA (Io) | - | 100 mA @ 8500 V | - | - | - | Chassis Mount | - | -40°C ~ 160°C |
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D2601N90TXPSA1DIODE GEN PURP 9KV 3040A Infineon Technologies |
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![]() 规格书 |
- | DO-200AE | Tray | Active | Standard | 9000 V | 3040A | - | Standard Recovery >500ns, > 200mA (Io) | - | 100 mA @ 9000 V | - | - | - | Chassis Mount | - | -40°C ~ 160°C |
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D3501N42TVFXPSA1DIODE GP 4.2KV 4870A D12035K-1 Infineon Technologies |
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- | DO-200AE | Tray | Active | Standard | 4200 V | 4870A | - | Standard Recovery >500ns, > 200mA (Io) | - | 100 mA @ 4200 V | - | - | - | Chassis Mount | BG-D12035K-1 | 160°C (Max) |
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D1961SH45TXPSA1DIODE GEN PURP 4.5KV 2380A Infineon Technologies |
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![]() 规格书 |
- | DO-200AE | Tray | Active | Standard | 4500 V | 2380A | 2.5 V @ 2500 A | Standard Recovery >500ns, > 200mA (Io) | - | 150 mA @ 4500 V | - | - | - | Chassis Mount | - | 0°C ~ 140°C |
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D1721NH90TAOSA1DIODE GEN PURP 2160A D10026K-1 Infineon Technologies |
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![]() 规格书 |
- | DO-200, Variant | Tray | Not For New Designs | Standard | - | 2160A | - | Standard Recovery >500ns, > 200mA (Io) | - | 150 mA @ 9000 V | - | - | - | Chassis Mount | BG-D10026K-1 | 0°C ~ 140°C |