图片 | 型号 | 库存 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)(最大值) | 电流 - 平均整流(Io) | 电压 - 正向 (Vf)(最大值)@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
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SDT08S60DIODE SIL CARB 600V 8A TO220-2-2 Infineon Technologies |
0 |
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![]() 规格书 |
CoolSiC™+ | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 600 V | 8A | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 300 µA @ 600 V | 280pF @ 0V, 1MHz | - | - | Through Hole | PG-TO220-2-2 | -55°C ~ 175°C |
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PX8746JDNG029XTMA1LED PX8746JDNG029XTMA1 Infineon Technologies |
0 |
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![]() 规格书 |
- | - | Bulk | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IDW10S120FKSA1DIODE SIL CARB 1.2KV 10A TO247-3 Infineon Technologies |
0 |
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![]() 规格书 |
CoolSiC™+ | TO-247-3 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 10A | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 240 µA @ 1200 V | 580pF @ 1V, 1MHz | - | - | Through Hole | PG-TO247-3-41 | -55°C ~ 175°C |
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IDH10S120AKSA1DIODE SIL CARB 1.2KV 10A TO220-2 Infineon Technologies |
0 |
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![]() 规格书 |
CoolSiC™+ | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 10A | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 240 µA @ 1200 V | 500pF @ 1V, 1MHz | - | - | Through Hole | PG-TO220-2-2 | -55°C ~ 175°C |
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IDW30G65C5FKSA1DIODE SIL CARB 650V 30A TO247-3 Infineon Technologies |
0 |
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![]() 规格书 |
CoolSiC™+ | TO-247-3 | Tube | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 650 V | 30A | 1.7 V @ 30 A | No Recovery Time > 500mA (Io) | 0 ns | 1.1 mA @ 650 V | 860pF @ 1V, 1MHz | - | - | Through Hole | PG-TO247-3-1 | -55°C ~ 175°C |
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AIDW30S65C5XKSA1DIODE SIL CARB 650V 30A TO247-3 Infineon Technologies |
24 |
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![]() 规格书 |
CoolSiC™ | TO-247-3 | Bulk | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 30A | 1.7 V @ 30 A | No Recovery Time > 500mA (Io) | 0 ns | 120 µA @ 650 V | 860pF @ 1V, 1MHz | Automotive | AEC-Q100/101 | Through Hole | PG-TO247-3-41 | -40°C ~ 175°C |
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IDW15S120FKSA1DIODE SIL CARB 1.2KV 15A TO247-3 Infineon Technologies |
0 |
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![]() 规格书 |
CoolSiC™+ | TO-247-3 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 15A | 1.8 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | 305 µA @ 1200 V | 870pF @ 1V, 1MHz | - | - | Through Hole | PG-TO247-3 | -55°C ~ 175°C |
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IDH15S120AKSA1DIODE SIL CARB 1.2KV 15A TO220-2 Infineon Technologies |
0 |
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![]() 规格书 |
CoolSiC™+ | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 15A | 1.8 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | 360 µA @ 1200 V | 750pF @ 1V, 1MHz | - | - | Through Hole | PG-TO220-2-2 | -55°C ~ 175°C |
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DDB6U100N16RBOSA1DIODE GP 1.6KV 104A AG-ECONO2A Infineon Technologies |
79 |
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![]() 规格书 |
- | Module | Bulk | Active | Standard | 1600 V | 104A | 1.55 V @ 100 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 mA @ 1600 V | - | - | - | Chassis Mount | AG-ECONO2A | 150°C |
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ND104N16KHPSA1DIODE GEN PURP 1.6KV 104A PB20-1 Infineon Technologies |
0 |
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![]() 规格书 |
- | Module | Bulk | Obsolete | Standard | 1600 V | 104A | - | Standard Recovery >500ns, > 200mA (Io) | - | 20 mA @ 1600 V | - | - | - | Chassis Mount | BG-PB20-1 | -40°C ~ 135°C |