图片 | 型号 | 库存 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)(最大值) | 电流 - 平均整流(Io) | 电压 - 正向 (Vf)(最大值)@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IDWD120E65E7XKSA1DIODE GEN PURP 650V 150A TO247-2 Infineon Technologies |
210 |
|
![]() 规格书 |
- | TO-247-2 | Tube | Active | Standard | 650 V | 150A | 2.1 V @ 120 A | Fast Recovery =< 500ns, > 5A (Io) | 98 ns | 20 µA @ 650 V | - | - | - | Through Hole | PG-TO247-2-2 | -40°C ~ 175°C |
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IDWD60E65E7XKSA1DIODE GEN PURP 650V 100A TO247-2 Infineon Technologies |
187 |
|
![]() 规格书 |
- | TO-247-2 | Tube | Active | Standard | 650 V | 100A | 2.1 V @ 60 A | Fast Recovery =< 500ns, > 5A (Io) | 99 ns | 20 µA @ 650 V | - | - | - | Through Hole | PG-TO247-2-2 | -40°C ~ 175°C |
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IDWD75E120D7XKSA1DIODE GEN PURP 1200V 116A TO247 Infineon Technologies |
235 |
|
![]() 规格书 |
- | TO-247-2 | Tube | Active | Standard | 1200 V | 116A | 3 V @ 75 A | Fast Recovery =< 500ns, > 5A (Io) | 195 ns | 20 µA @ 1200 V | - | - | - | Through Hole | PG-TO247-2-2 | -40°C ~ 175°C |
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IDWD75E65E7XKSA1DIODE GEN PURP 650V 100A TO247-2 Infineon Technologies |
210 |
|
![]() 规格书 |
- | TO-247-2 | Tube | Active | Standard | 650 V | 100A | 2.1 V @ 75 A | Fast Recovery =< 500ns, > 200mA (Io) | 97 ns | 20 µA @ 650 V | - | - | - | Through Hole | PG-TO247-2-2 | -40°C ~ 175°C |
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IDWD100E120D7XKSA1DIODE GEN PURP 1200V 146A TO247 Infineon Technologies |
224 |
|
![]() 规格书 |
- | TO-247-2 | Tube | Active | Standard | 1200 V | 146A | 3 V @ 100 A | Fast Recovery =< 500ns, > 5A (Io) | 205 ns | 20 µA @ 1200 V | - | - | - | Through Hole | PG-TO247-2-2 | -40°C ~ 175°C |
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IDWD100E65E7XKSA1DIODE GEN PURP 650V 150A TO247-2 Infineon Technologies |
232 |
|
![]() 规格书 |
- | TO-247-2 | Tube | Active | Standard | 650 V | 150A | 2.1 V @ 100 A | Fast Recovery =< 500ns, > 5A (Io) | 98 ns | 20 µA @ 650 V | - | - | - | Through Hole | PG-TO247-2-2 | -40°C ~ 175°C |
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IDFW40E65D1EXKSA1DIODE GP 650V 42A TO247-3-AI Infineon Technologies |
210 |
|
![]() 规格书 |
- | TO-247-3 | Tube | Active | Standard | 650 V | 42A | 2.1 V @ 40 A | Fast Recovery =< 500ns, > 200mA (Io) | 76 ns | 40 µA @ 650 V | - | - | - | Through Hole | PG-TO247-3-AI | -40°C ~ 175°C |
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IDWD120E120D7XKSA1DIODE GEN PURP 1200V 177A TO247 Infineon Technologies |
129 |
|
![]() 规格书 |
- | TO-247-2 | Tube | Active | Standard | 1200 V | 177A | 3 V @ 120 A | Fast Recovery =< 500ns, > 5A (Io) | 215 ns | 20 µA @ 1200 V | - | - | - | Through Hole | PG-TO247-2-2 | -40°C ~ 175°C |
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IDWD140E120D7XKSA1DIODE GEN PURP 1200V 207A TO247 Infineon Technologies |
167 |
|
![]() 规格书 |
- | TO-247-2 | Tube | Active | Standard | 1200 V | 207A | 3 V @ 140 A | Fast Recovery =< 500ns, > 5A (Io) | 225 ns | 20 µA @ 1200 V | - | - | - | Through Hole | PG-TO247-2-2 | -40°C ~ 175°C |
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IDWD10G200C5XKSA1SIC DISCRETE Infineon Technologies |
240 |
|
![]() 规格书 |
CoolSiC™ | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 2000 V | 35A | 1.75 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 150 µA @ 2 kV | 1140pF @ 1V, 100kHz | - | - | Through Hole | PG-TO247-2-U01 | -55°C ~ 175°C |