图片 | 型号 | 库存 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)(最大值) | 电流 - 平均整流(Io) | 电压 - 正向 (Vf)(最大值)@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
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GB02SLT06-214SIC SCHOTTKY DIODE 650V 2A GeneSiC Semiconductor |
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* | - | Tape & Reel (TR) | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - |
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GC08MPS12-220DIODE SIL CARB 1.2KV 43A TO220-2 GeneSiC Semiconductor |
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![]() 规格书 |
SiC Schottky MPS™ | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 43A | 1.8 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 7 µA @ 1200 V | 545pF @ 1V, 1MHz | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
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GB05SLT12-252DIODE SIL CARBIDE 1.2KV 5A TO252 GeneSiC Semiconductor |
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![]() 规格书 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 5A | 1.8 V @ 2 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 1200 V | 260pF @ 1V, 1MHz | - | - | Surface Mount | TO-252 | -55°C ~ 175°C |
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GC05MPS12-252DIODE SIL CARB 1.2KV 27A TO252-2 GeneSiC Semiconductor |
0 |
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![]() 规格书 |
SiC Schottky MPS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 27A | 1.8 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 4 µA @ 1200 V | 359pF @ 1V, 1MHz | - | - | Surface Mount | TO-252-2 | -55°C ~ 175°C |
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S6BDIODE GEN PURP 100V 6A DO4 GeneSiC Semiconductor |
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![]() 规格书 |
- | DO-203AA, DO-4, Stud | Bulk | Active | Standard | 100 V | 6A | 1.1 V @ 6 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 100 V | - | - | - | Chassis, Stud Mount | DO-4 | -65°C ~ 175°C |
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S6BRDIODE GEN PURP REV 100V 6A DO4 GeneSiC Semiconductor |
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![]() 规格书 |
- | DO-203AA, DO-4, Stud | Bulk | Active | Standard, Reverse Polarity | 100 V | 6A | 1.1 V @ 6 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 100 V | - | - | - | Chassis, Stud Mount | DO-4 | -65°C ~ 175°C |
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S6DDIODE GEN PURP 200V 6A DO4 GeneSiC Semiconductor |
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![]() 规格书 |
- | DO-203AA, DO-4, Stud | Bulk | Active | Standard | 200 V | 6A | 1.1 V @ 6 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 100 V | - | - | - | Chassis, Stud Mount | DO-4 | -65°C ~ 175°C |
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S6DRDIODE GEN PURP REV 200V 6A DO4 GeneSiC Semiconductor |
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![]() 规格书 |
- | DO-203AA, DO-4, Stud | Bulk | Active | Standard, Reverse Polarity | 200 V | 6A | 1.1 V @ 6 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 100 V | - | - | - | Chassis, Stud Mount | DO-4 | -65°C ~ 175°C |
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S6GDIODE GEN PURP 400V 6A DO4 GeneSiC Semiconductor |
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![]() 规格书 |
- | DO-203AA, DO-4, Stud | Bulk | Active | Standard | 400 V | 6A | 1.1 V @ 6 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 100 V | - | - | - | Chassis, Stud Mount | DO-4 | -65°C ~ 175°C |
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S6GRDIODE GEN PURP REV 400V 6A DO4 GeneSiC Semiconductor |
0 |
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![]() 规格书 |
- | DO-203AA, DO-4, Stud | Bulk | Active | Standard, Reverse Polarity | 400 V | 6A | 1.1 V @ 6 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 100 V | - | - | - | Chassis, Stud Mount | DO-4 | -65°C ~ 175°C |