图片 | 型号 | 库存 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | 二极管配置 | 技术 | 电压 - 直流反向 (Vr)(最大值) | 电流 - 平均整流 (Io)(每个二极管) | 电压 - 正向 (Vf)(最大值)@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 工作温度 - 结点 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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MURTA500120DIODE MOD GP 1200V 250A 3TOWER GeneSiC Semiconductor |
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![]() 规格书 |
- | Three Tower | Bulk | Active | 1 Pair Common Cathode | Standard | 1200 V | 250A | 2.6 V @ 250 A | Standard Recovery >500ns, > 200mA (Io) | - | 25 µA @ 1200 V | -55°C ~ 150°C | - | - | Chassis Mount | Three Tower |
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MURTA500120RDIODE MOD GP 1200V 250A 3TOWER GeneSiC Semiconductor |
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![]() 规格书 |
- | Three Tower | Bulk | Active | 1 Pair Common Anode | Standard | 1200 V | 250A | 2.6 V @ 250 A | Standard Recovery >500ns, > 200mA (Io) | - | 25 µA @ 1200 V | -55°C ~ 150°C | - | - | Chassis Mount | Three Tower |
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MURTA60020DIODE MODULE GP 200V 300A 3TOWER GeneSiC Semiconductor |
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![]() 规格书 |
- | Three Tower | Bulk | Active | 1 Pair Common Cathode | Standard | 200 V | 300A | 1.3 V @ 300 A | Fast Recovery =< 500ns, > 200mA (Io) | 200 ns | 25 µA @ 50 V | -55°C ~ 150°C | - | - | Chassis Mount | Three Tower |
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MURTA60020RDIODE MODULE GP 200V 300A 3TOWER GeneSiC Semiconductor |
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![]() 规格书 |
- | Three Tower | Bulk | Active | 1 Pair Common Anode | Standard | 200 V | 300A | 1.3 V @ 300 A | Fast Recovery =< 500ns, > 200mA (Io) | 200 ns | 25 µA @ 50 V | -55°C ~ 150°C | - | - | Chassis Mount | Three Tower |
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MURTA60040DIODE MODULE GP 400V 300A 3TOWER GeneSiC Semiconductor |
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![]() 规格书 |
- | Three Tower | Bulk | Active | 1 Pair Common Cathode | Standard | 400 V | 300A | 1.5 V @ 300 A | Fast Recovery =< 500ns, > 200mA (Io) | 220 ns | 25 µA @ 50 V | -55°C ~ 150°C | - | - | Chassis Mount | Three Tower |
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MURTA60040RDIODE MODULE GP 400V 300A 3TOWER GeneSiC Semiconductor |
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![]() 规格书 |
- | Three Tower | Bulk | Active | 1 Pair Common Anode | Standard | 400 V | 300A | 1.5 V @ 300 A | Fast Recovery =< 500ns, > 200mA (Io) | 220 ns | 25 µA @ 50 V | -55°C ~ 150°C | - | - | Chassis Mount | Three Tower |
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MURTA60060DIODE MODULE GP 600V 300A 3TOWER GeneSiC Semiconductor |
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![]() 规格书 |
- | Three Tower | Bulk | Active | 1 Pair Common Cathode | Standard | 600 V | 300A | 1.7 V @ 300 A | Fast Recovery =< 500ns, > 200mA (Io) | 280 ns | 25 µA @ 50 V | -55°C ~ 150°C | - | - | Chassis Mount | Three Tower |
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MURTA60060RDIODE MODULE GP 600V 300A 3TOWER GeneSiC Semiconductor |
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![]() 规格书 |
- | Three Tower | Bulk | Active | 1 Pair Common Anode | Standard | 600 V | 300A | 1.7 V @ 300 A | Fast Recovery =< 500ns, > 200mA (Io) | 280 ns | 25 µA @ 50 V | -55°C ~ 150°C | - | - | Chassis Mount | Three Tower |
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MURTA600120DIODE MOD GP 1200V 300A 3TOWER GeneSiC Semiconductor |
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![]() 规格书 |
- | Three Tower | Bulk | Active | 1 Pair Common Cathode | Standard | 1200 V | 300A | 2.6 V @ 300 A | Standard Recovery >500ns, > 200mA (Io) | - | 25 µA @ 1200 V | -55°C ~ 150°C | - | - | Chassis Mount | Three Tower |
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MURTA600120RDIODE MOD GP 1200V 300A 3TOWER GeneSiC Semiconductor |
0 |
|
![]() 规格书 |
- | Three Tower | Bulk | Active | 1 Pair Common Anode | Standard | 1200 V | 300A | 2.6 V @ 300 A | Standard Recovery >500ns, > 200mA (Io) | - | 25 µA @ 1200 V | -55°C ~ 150°C | - | - | Chassis Mount | Three Tower |