图片 | 型号 | 库存 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | IGBT 类型 | 电压 - 集电极发射极击穿(最大值) | 电流 - 集电极 (Ic)(最大值) | 电流 - 集电极脉冲 (Icm) | 导通电压 (Vce(on))(最大值)@ Vge, Ic | 功率 - 最大值 | 开关能量 | 输入类型 | 栅极电荷 | 导通/关断时间 (Td) @ 25°C | 测试条件 | 反向恢复时间 (trr) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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APT25GP120BDQ1GIGBT PT 1200V 69A TO247 Microchip Technology |
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POWER MOS 7® | TO-247-3 | Tube | Active | PT | 1200 V | 69 A | 90 A | 3.9V @ 15V, 25A | 417 W | 500µJ (on), 440µJ (off) | Standard | 110 nC | 12ns/70ns | 600V, 25A, 5Ohm, 15V | - | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 [B] |
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APT64GA90LD30IGBT PT 900V 117A TO264 Microchip Technology |
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POWER MOS 8™ | TO-264-3, TO-264AA | Tube | Active | PT | 900 V | 117 A | 193 A | 3.1V @ 15V, 38A | 500 W | 1192µJ (on), 1088µJ (off) | Standard | 162 nC | 18ns/131ns | 600V, 38A, 4.7Ohm, 15V | - | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264 [L] |
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APT33GF120LRDQ2GIGBT 1200V 64A 357W TO264 Microchip Technology |
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- | TO-264-3, TO-264AA | Tube | Obsolete | NPT | 1200 V | 64 A | 75 A | 3V @ 15V, 25A | 357 W | 1.315mJ (on), 1.515mJ (off) | Standard | 170 nC | 14ns/185ns | 800V, 25A, 4.3Ohm, 15V | - | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264 [L] |
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APT50GP60BGIGBT PT 600V 100A TO247 Microchip Technology |
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POWER MOS 7® | TO-247-3 | Tube | Active | PT | 600 V | 100 A | 190 A | 2.7V @ 15V, 50A | 625 W | 465µJ (on), 637µJ (off) | Standard | 165 nC | 19ns/83ns | 400V, 50A, 5Ohm, 15V | - | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 [B] |
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APT40GP60BGIGBT PT 600V 100A TO247 Microchip Technology |
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POWER MOS 7® | TO-247-3 | Tube | Active | PT | 600 V | 100 A | 160 A | 2.7V @ 15V, 40A | 543 W | 385µJ (on), 352µJ (off) | Standard | 135 nC | 20ns/64ns | 400V, 40A, 5Ohm, 15V | - | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 [B] |
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APT40GP60B2DQ2GIGBT PT 600V 100A Microchip Technology |
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POWER MOS 7® | TO-247-3 Variant | Tube | Active | PT | 600 V | 100 A | 160 A | 2.7V @ 15V, 40A | 543 W | 385µJ (on), 350µJ (off) | Standard | 135 nC | 20ns/64ns | 400V, 40A, 5Ohm, 15V | - | -55°C ~ 150°C (TJ) | - | - | Through Hole | - |
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APT70GR120LIGBT NPT 1200V 160A TO264 Microchip Technology |
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- | TO-264-3, TO-264AA | Tube | Active | NPT | 1200 V | 160 A | 280 A | 3.2V @ 15V, 70A | 961 W | 3.82mJ (on), 2.58mJ (off) | Standard | 544 nC | 33ns/278ns | 600V, 70A, 4.3Ohm, 15V | - | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264 |
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APT70GR120B2IGBT NPT 1200V 160A TO247 Microchip Technology |
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- | TO-247-3 | Tube | Active | NPT | 1200 V | 160 A | 280 A | 3.2V @ 15V, 70A | 961 W | 3.82mJ (on), 2.58mJ (off) | Standard | 544 nC | 33ns/278ns | 600V, 70A, 4.3Ohm, 15V | - | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 |
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APT50GP60B2DQ2GIGBT PT 600V 150A Microchip Technology |
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POWER MOS 7® | TO-247-3 Variant | Tube | Active | PT | 600 V | 150 A | 190 A | 2.7V @ 15V, 50A | 625 W | 465µJ (on), 635µJ (off) | Standard | 165 nC | 19ns/85ns | 400V, 50A, 4.3Ohm, 15V | - | -55°C ~ 150°C (TJ) | - | - | Through Hole | - |
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APT50GS60BRDQ2GIGBT NPT 600V 93A TO247 Microchip Technology |
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Thunderbolt IGBT® | TO-247-3 | Tube | Active | NPT | 600 V | 93 A | 195 A | 3.15V @ 15V, 50A | 415 W | 755µJ (off) | Standard | 235 nC | 16ns/225ns | 400V, 40A, 4.7Ohm, 15V | 25 ns | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 [B] |