图片 | 型号 | 库存 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | IGBT 类型 | 配置 | 电压 - 集电极发射极击穿(最大值) | 电流 - 集电极 (Ic)(最大值) | 功率 - 最大值 | 导通电压 (Vce(on))(最大值)@ Vge, Ic | 电流 - 集电极截止(最大值) | 输入电容 (Cies) @ Vce | 输入 | NTC 热敏电阻 | 工作温度 | 安装类型 | 供应商设备封装 |
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VS-CPV362M4UPBFIGBT MODULE 600V 7.2A 23W IMS-2 Vishay General Semiconductor - Diodes Division |
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- | 19-SIP (13 Leads), IMS-2 | Bulk | Obsolete | - | - | 600 V | 7.2 A | 23 W | 2.2V @ 15V, 3.9A | 250 µA | 530 pF @ 30 V | Standard | No | -40°C ~ 150°C (TJ) | Through Hole | IMS-2 |
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VS-CPV363M4FPBFIGBT MODULE 600V 3PHASE IMS-2 Vishay General Semiconductor - Diodes Division |
0 |
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- | 19-SIP (13 Leads), IMS-2 | Bulk | Obsolete | - | - | - | - | - | - | - | - | - | No | -40°C ~ 150°C (TJ) | Through Hole | IMS-2 |
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VS-CPV363M4KPBFIGBT MODULE 600V 11A 36W IMS-2 Vishay General Semiconductor - Diodes Division |
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- | 19-SIP (13 Leads), IMS-2 | Bulk | Obsolete | - | - | 600 V | 11 A | 36 W | 2.1V @ 15V, 6A | 250 µA | 740 pF @ 30 V | Standard | No | -40°C ~ 150°C (TJ) | Through Hole | IMS-2 |
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VS-CPV364M4FPBFIGBT MODULE 600V 27A 63W IMS-2 Vishay General Semiconductor - Diodes Division |
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- | 19-SIP (13 Leads), IMS-2 | Bulk | Obsolete | - | - | 600 V | 27 A | 63 W | 1.5V @ 15V, 15A | 250 µA | 2.2 nF @ 30 V | Standard | No | -40°C ~ 150°C (TJ) | Through Hole | IMS-2 |
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VS-CPV364M4UPBFIGBT MODULE 600V 20A 63W IMS-2 Vishay General Semiconductor - Diodes Division |
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- | 19-SIP (13 Leads), IMS-2 | Bulk | Obsolete | - | - | 600 V | 20 A | 63 W | 2.1V @ 15V, 10A | 250 µA | 2.1 nF @ 30 V | Standard | No | -40°C ~ 150°C (TJ) | Through Hole | IMS-2 |
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VS-CPV362M4FPBFIGBT MODULE 600V 8.8A 23W IMS-2 Vishay General Semiconductor - Diodes Division |
0 |
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- | 19-SIP (13 Leads), IMS-2 | Bulk | Obsolete | - | - | 600 V | 8.8 A | 23 W | 1.7V @ 15V, 4.8A | 250 µA | 340 pF @ 30 V | Standard | No | -40°C ~ 150°C (TJ) | Through Hole | IMS-2 |
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VS-EMG050J60NIGBT MOD 600V 88A 338W EMIPAK2 Vishay General Semiconductor - Diodes Division |
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- | EMIPAK2 | Bulk | Obsolete | - | Half Bridge | 600 V | 88 A | 338 W | 2.1V @ 15V, 50A | 100 µA | 9.5 nF @ 30 V | Standard | Yes | 150°C (TJ) | Chassis Mount | EMIPAK2 |
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VS-ENQ030L120SIGBT MOD 1200V 61A EMIPAK-1B Vishay General Semiconductor - Diodes Division |
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- | EMIPAK-1B | Bulk | Active | Trench | Three Level Inverter | 1200 V | 61 A | 216 W | 2.52V @ 15V, 30A | 230 µA | 3.34 nF @ 30 V | Standard | Yes | 150°C (TJ) | Chassis Mount | EMIPAK-1B |
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VS-ETL015Y120HIGBT MOD 1200V 22A 89W EMIPAK-2B Vishay General Semiconductor - Diodes Division |
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- | EMIPAK-2B | Bulk | Active | Trench | - | 1200 V | 22 A | 89 W | 3.03V @ 15V, 15A | 75 µA | 1.07 nF @ 30 V | Standard | Yes | 150°C (TJ) | Chassis Mount | EMIPAK-2B |
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VS-GA100NA60UPIGBT MOD 600V 100A 250W SOT227 Vishay General Semiconductor - Diodes Division |
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- | SOT-227-4, miniBLOC | Bulk | Obsolete | - | Single | 600 V | 100 A | 250 W | 2.1V @ 15V, 50A | 250 µA | 7.4 nF @ 30 V | Standard | No | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227 |