图片 | 型号 | 库存 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | IGBT 类型 | 配置 | 电压 - 集电极发射极击穿(最大值) | 电流 - 集电极 (Ic)(最大值) | 功率 - 最大值 | 导通电压 (Vce(on))(最大值)@ Vge, Ic | 电流 - 集电极截止(最大值) | 输入电容 (Cies) @ Vce | 输入 | NTC 热敏电阻 | 工作温度 | 安装类型 | 供应商设备封装 |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
F4100R06KL4BOSA1LOW POWER ECONO Infineon Technologies |
490 |
|
- |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
![]() |
BSM100GB120DN2KHOSA1MEDIUM POWER 34MM Infineon Technologies |
781 |
|
- |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
![]() |
FP75R12KT4BOSA1FP75R12 - IGBT MODULE Infineon Technologies |
31 |
|
- |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
![]() |
DF450R17N2E4PB11BDLA1LOW POWER ECONO Infineon Technologies |
84 |
|
- |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
![]() |
BSM100GB120DN2S7HOSA1INSULATED GATE BIPOLAR TRANSISTO Infineon Technologies |
30 |
|
- |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
![]() |
FS100R12N2T4BDLA1FS100R12 - IGBT MODULE Infineon Technologies |
36 |
|
- |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
FF200R12KE3HOSA1MEDIUM POWER 62MM Infineon Technologies |
160 |
|
- |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
![]() |
FS100R12N2T4BPSA1FS100R12 - IGBT MODULE Infineon Technologies |
219 |
|
- |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
![]() |
FS100R12N2T4B11BOSA1FS100R12 - IGBT MODULE Infineon Technologies |
47 |
|
- |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
![]() |
FF450R07ME4B11BOSA1MEDIUM POWER ECONO Infineon Technologies |
108 |
|
- |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |