上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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DI0A35N06PGK-AQMOSFET, DFN1006-3, 60V, 0.35A, 1 Diotec Semiconductor |
0 | - |
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规格书 |
- | SC-101, SOT-883 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 350mA | 2.5V, 10V | 1.4Ohm @ 500mA, 10V | 1V @ 250µA | 1.9 nC @ 10 V | ±20V | 32 pF @ 25 V | - | 223mW | -55°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Surface Mount | DFN1006-3 |
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DI020P06PT-AQMOSFET, POWERQFN 3X3, -60V, -20A Diotec Semiconductor |
0 | - |
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规格书 |
- | 8-PowerVDFN | Tape & Reel (TR) | Active | P-Channel | - | - | 20A | - | - | - | - | - | - | - | 29.7W | - | - | - | Surface Mount | 8-QFN (3x3) |
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DI025N20PQMOSFET N , 200V 25A 48mW Diotec Semiconductor |
0 | - |
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规格书 |
- | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 25A (Tc) | 10V | 48mOhm @ 20A, 10V | 4V @ 250µA | 28 nC @ 10 V | ±20V | 1650 pF @ 100 V | - | 135W (Tc) | -55°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Surface Mount | 8-QFN (5x6) |
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DI110N06D2MOSFET, D2PAK, 60V, 110A, 150C, Diotec Semiconductor |
0 | - |
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规格书 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 110A (Tc) | 10V | 3.2mOhm @ 100A, 10V | 4V @ 250µA | 75 nC @ 10 V | ±20V | 4597 pF @ 25 V | - | 62.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263AB |
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DIW065SIC080SIC MOSFET, TO-247-3L, N, 36A, 6 Diotec Semiconductor |
0 | - |
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规格书 |
- | TO-247-3 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | 36A (Tc) | 18V | 80mOhm @ 15A, 18V | 4V @ 5mA | 75 nC @ 20 V | +18V, -5V | 1480 pF @ 600 V | - | 175W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247 |
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DIW065SIC049SIC MOSFET, TO-247-3L, N, 60A, 6 Diotec Semiconductor |
0 | - |
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规格书 |
- | TO-247-3 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | 60A (Tc) | 18V | 49mOhm @ 30A, 18V | 4V @ 10mA | 128 nC @ 20 V | +18V, -5V | 2612 pF @ 600 V | - | 550W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247 |
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DIF120SIC053SIC MOSFET, TO-247-4L, N, 65A, 1 Diotec Semiconductor |
0 | - |
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规格书 |
- | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 65A (Tc) | 18V | 53mOhm @ 33A, 18V | 4V @ 9.5mA | 121 nC @ 15 V | +18V, -4V | 2070 pF @ 1000 V | - | 278W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
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DIF065SIC030SIC MOSFET, TO-247-4L, N, 105A, Diotec Semiconductor |
0 | - |
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规格书 |
- | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | 105A (Tc) | 18V | 30mOhm @ 75A, 18V | 4V @ 23.5mA | 145 nC @ 18 V | +18V, -4V | 3300 pF @ 600 V | - | - | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
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DIW170SIC049SIC MOSFET, TO-247-3L, N, 67A, 1 Diotec Semiconductor |
0 | - |
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规格书 |
- | TO-247-3 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1700 V | 67A (Tc) | 18V | 49mOhm @ 40A, 18V | 4V @ 15mA | 179 nC @ 18 V | +18V, -4V | 3046 pF @ 1000 V | - | 357W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247 |
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DIW120SIC028SIC MOSFET, TO-247-3L, N, 118A, Diotec Semiconductor |
0 | - |
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规格书 |
- | TO-247-3 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 118A (Tc) | 20V | 28mOhm @ 80A, 20V | 4V @ 25mA | 373 nC @ 20 V | +20V, -5V | 5691 pF @ 1000 V | - | 715W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247 |
