上传BOM
场效应晶体管（FETs）、MOSFETs
| 图片 | 型号 | 库存 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IPP020N06NAKSA1MOSFET N-CH 60V 29A/120A TO220-3 |
662 |
|
规格书 |
OptiMOS™ | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 29A (Ta), 120A (Tc) | 6V, 10V | 2mOhm @ 100A, 10V | 2.8V @ 143µA | 106 nC @ 10 V | ±20V | 7800 pF @ 30 V | - | 3W (Ta), 214W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3 |
|
GS-065-004-6-L-MRGS-065-004-6-L-MR |
357 |
|
- |
- | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 700 V | 4.6A (Tc) | 6V | 455mOhm @ 1.2A, 6V | 2.6V @ 1mA | 0.8 nC @ 6 V | +7V, -10V | 26 pF @ 400 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PDFN (5x6) |
|
|
IPDQ65R099CFD7XTMA1HIGH POWER_NEW |
750 |
|
规格书 |
CoolMOS™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 29A (Tc) | 10V | 99mOhm @ 9.7A, 10V | 4.5V @ 480µA | 39 nC @ 10 V | ±20V | 1942 pF @ 400 V | - | 186W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HDSOP-22-1 |
|
DMTH10H2M5STLW-13MOSFET BVDSS: 61V~100V POWERDI10 |
1,257 |
|
规格书 |
- | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 215A (Tc) | 10V | 2.5mOhm @ 30A, 10V | 4V @ 250µA | 124.4 nC @ 10 V | ±20V | 8450 pF @ 50 V | - | 5.8W (Ta), 230.8W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | POWERDI1012-8 |
|
SIHP17N80E-GE3MOSFET N-CH 800V 15A TO220AB |
1,000 |
|
规格书 |
E | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 15A (Tc) | 10V | 290mOhm @ 8.5A, 10V | 4V @ 250µA | 122 nC @ 10 V | ±30V | 2408 pF @ 100 V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
|
SPI21N50C3XKSA1MOSFET N-CH 560V 21A TO262-3 |
940 |
|
规格书 |
CoolMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 560 V | 21A (Tc) | 10V | 190mOhm @ 13.1A, 10V | 3.9V @ 1mA | 95 nC @ 10 V | ±20V | 2400 pF @ 25 V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO262-3-1 |
|
IPA65R150CFDXKSA2MOSFET N-CH 650V 22.4A TO220 |
494 |
|
规格书 |
CoolMOS™ CFD2 | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 22.4A (Tc) | 10V | 150mOhm @ 9.3A, 10V | 4.5V @ 900µA | 86 nC @ 10 V | ±20V | 2340 pF @ 100 V | - | 34.7W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-FP |
|
|
SIHA150N60E-GE3E SERIES POWER MOSFET THIN-LEAD |
2,000 |
|
规格书 |
E | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 9A (Tc) | 10V | 155mOhm @ 10A, 10V | 5V @ 250µA | 36 nC @ 10 V | ±30V | 1514 pF @ 100 V | - | 179W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 Full Pack |
|
|
S1M1000170DMOSFET SILICON CARBIDE SIC 1700V |
290 |
|
规格书 |
- | TO-247-3 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1700 V | 5.2A (Tc) | 20V | 1.3Ohm @ 2A, 20V | 4V @ 500µA | 10 nC @ 20 V | +25V, -10V | 160 pF @ 1000 V | - | 81W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247AD |
|
SIHA22N60AE-GE3N-CHANNEL 600V |
979 |
|
规格书 |
E | TO-220-3 Full Pack | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 8A (Tc) | 10V | 180mOhm @ 11A, 10V | 4V @ 250µA | 96 nC @ 10 V | ±30V | 1451 pF @ 100 V | - | 33W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 Full Pack |
|
IRFIBF30GPBFMOSFET N-CH 900V 1.9A TO220-3 |
888 |
|
规格书 |
- | TO-220-3 Full Pack, Isolated Tab | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 900 V | 1.9A (Tc) | 10V | 3.7Ohm @ 1.1A, 10V | 4V @ 250µA | 78 nC @ 10 V | ±20V | 1200 pF @ 25 V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-3 |
|
|
IPP023N08N5AKSA1MOSFET N-CH 80V 120A TO220-3 |
352 |
|
规格书 |
OptiMOS™ | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 120A (Tc) | 6V, 10V | 2.3mOhm @ 100A, 10V | 3.8V @ 208µA | 166 nC @ 10 V | ±20V | 12100 pF @ 40 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3 |
|
|
IQDH35N03LM5ATMA1TRENCH <= 40V |
4,823 |
|
规格书 |
OptiMOS™ 5 | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 66A (Ta), 700A (Tc) | 4.5V, 10V | 0.35mOhm @ 50A, 10V | 2V @ 1.46mA | 262 nC @ 10 V | ±20V | 18000 pF @ 15 V | - | 2.5W (Ta), 278W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TSON-8-9 |
|
|
DMTH4M70SPGWQ-13MOSFET BVDSS: 31V~40V POWERDI808 |
4,692 |
|
规格书 |
- | SOT-1235 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 460A (Tc) | 10V | 0.7mOhm @ 25A, 10V | 4V @ 250µA | 117.1 nC @ 10 V | ±20V | 10053 pF @ 20 V | - | 5.6W (Ta), 428W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PowerDI8080-5 |
|
|
AONS66916N |
2,756 |
|
规格书 |
AlphaSGT™ | 8-PowerSMD, Flat Leads | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 100A (Tc) | 6V, 10V | 3.6mOhm @ 20A, 10V | 3.6V @ 250µA | 95 nC @ 10 V | ±20V | 5325 pF @ 50 V | - | 215W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-DFN (5x6) |
|
|
TSM60NC196CM2 RNG600V, 28A, SINGLE N-CHANNEL POWE |
2,394 |
|
规格书 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 28A (Tc) | 10V | 196mOhm @ 9.5A, 10V | 5V @ 1mA | 39 nC @ 10 V | ±20V | 1566 pF @ 300 V | - | 152W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263AB (D2PAK) |
|
|
SIHA155N60EF-GE3E SERIES POWER MOSFET THIN-LEAD |
1,842 |
|
规格书 |
EF | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 9A (Tc) | 10V | 89mOhm @ 3.7A, 10V | 5V @ 250µA | 38 nC @ 10 V | ±20V | 1465 pF @ 100 V | - | 33W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 Full Pack |
|
|
PSMN2R9-100SSEJPOWERMOS ASFETS |
2,000 |
|
- |
- | SOT-1235 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 210A (Ta) | 10V | 2.9mOhm @ 25A, 10V | 3.6V @ 1mA | 188 nC @ 10 V | ±20V | 13280 pF @ 50 V | - | 341W (Ta) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | LFPAK88 (SOT1235) |
|
|
PSMN2R5-80SSEJPOWERMOS ASFETS |
1,995 |
|
- |
- | SOT-1235 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 190A (Ta) | 10V | 2.5mOhm @ 25A, 10V | 3.6V @ 1mA | 174 nC @ 10 V | ±20V | 13485 pF @ 40 V | - | 341W (Ta) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | LFPAK88 (SOT1235) |
|
FCMT360N65S3MOSFET N-CH 650V 10A 4PQFN |
0 |
|
规格书 |
SuperFET® III | 4-PowerTSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 10A (Tc) | 10V | 360mOhm @ 5A, 10V | 4.5V @ 200µA | 18 nC @ 10 V | ±30V | 730 pF @ 400 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 4-PQFN (8x8) |
