上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IXFN21N100QMOSFET N-CH 1000V 21A SOT-227B IXYS |
0 | - |
|
规格书 |
HiPerFET™, Q Class | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 21A (Tc) | 10V | 500mOhm @ 500mA, 10V | 5V @ 4mA | 170 nC @ 10 V | ±20V | 5900 pF @ 25 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
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IXFN27N80QMOSFET N-CH 800V 27A SOT-227B IXYS |
0 | - |
|
规格书 |
HiPerFET™, Q Class | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 27A (Tc) | 10V | 320mOhm @ 500mA, 10V | 4.5V @ 4mA | 170 nC @ 10 V | ±20V | 7600 pF @ 25 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
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IXFN38N80Q2MOSFET N-CH 800V 38A SOT227B IXYS |
0 | - |
|
规格书 |
HiPerFET™, Q2 Class | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 38A (Tc) | 10V | 220mOhm @ 500mA, 10V | 4.5V @ 8mA | 190 nC @ 10 V | ±30V | 8340 pF @ 25 V | - | 735W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
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IXFN44N60MOSFET N-CH 600V 44A SOT-227B IXYS |
0 | - |
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规格书 |
HiPerFET™ | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 44A (Tc) | 10V | 130mOhm @ 500mA, 10V | 4.5V @ 8mA | 330 nC @ 10 V | ±20V | 8900 pF @ 25 V | - | 600W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
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IXFN48N50QMOSFET N-CH 500V 48A SOT-227B IXYS |
0 | - |
|
规格书 |
HiPerFET™, Q Class | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 48A (Tc) | 10V | 100mOhm @ 500mA, 10V | 4V @ 4mA | 190 nC @ 10 V | ±20V | 7000 pF @ 25 V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
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IXFN66N50Q2MOSFET N-CH 500V 66A SOT-227B IXYS |
0 | - |
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规格书 |
HiPerFET™ | SOT-227-4, miniBLOC | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 66A (Tc) | 10V | 80mOhm @ 500mA, 10V | 4.5V @ 8mA | 199 nC @ 10 V | ±30V | 6800 pF @ 25 V | - | 735W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
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IXFN80N50Q2MOSFET N-CH 500V 72A SOT227B IXYS |
0 | - |
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规格书 |
HiPerFET™, Q2 Class | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 72A (Tc) | 10V | 60mOhm @ 500mA, 10V | 4.5V @ 8mA | 250 nC @ 10 V | ±30V | 12800 pF @ 25 V | - | 890W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
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IXFP3N50PMMOSFET N-CH 500V 2.7A TO220AB IXYS |
0 | - |
|
- |
HiPerFET™, PolarHT™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 2.7A (Tc) | 10V | 2Ohm @ 1.8A, 10V | 5.5V @ 250µA | 9.3 nC @ 10 V | ±30V | 409 pF @ 25 V | - | 36W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-3 |
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IXFP5N50PMMOSFET N-CH 500V 3.2A TO220AB IXYS |
0 | - |
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规格书 |
HiPerFET™, PolarHT™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 3.2A (Tc) | 10V | 1.4Ohm @ 2.5A, 10V | 5.5V @ 500µA | 12.6 nC @ 10 V | ±30V | 620 pF @ 25 V | - | 38W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-3 |
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IXFP8N50PMMOSFET N-CH 500V 4.4A TO220AB IXYS |
0 | - |
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- |
HiPerFET™, PolarHT™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 4.4A (Tc) | 10V | 800mOhm @ 4A, 10V | 5.5V @ 1mA | 20 nC @ 10 V | ±30V | 1050 pF @ 25 V | - | 42W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-3 |
