上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IXFR24N100MOSFET N-CH 1KV 22A ISOPLUS247 IXYS |
0 | - |
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规格书 |
HiPerFET™ | TO-247-3 | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 1000 V | 22A (Tc) | 10V | 390mOhm @ 12A, 10V | 5.5V @ 8mA | 267 nC @ 10 V | ±20V | 8700 pF @ 25 V | - | 416W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | ISOPLUS247™ |
|
IXFE48N50QMOSFET N-CH 500V 41A SOT-227B IXYS |
0 | - |
|
- |
HiPerFET™, Q Class | SOT-227-4, miniBLOC | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 41A (Tc) | 10V | 110mOhm @ 24A, 10V | 4V @ 4mA | 190 nC @ 10 V | ±20V | 7000 pF @ 25 V | - | 400W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
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IXFR34N80MOSFET N-CH 800V 28A ISOPLUS247 IXYS |
0 | - |
|
- |
HiPerFET™ | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 800 V | 28A (Tc) | 10V | 240mOhm @ 17A, 10V | 4V @ 8mA | 270 nC @ 10 V | ±20V | 7500 pF @ 25 V | - | 416W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | ISOPLUS247™ |
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LSIC1MO120T0080-TU1200V/80MOHM SIC MOSFET TO-263-7 IXYS |
0 | - |
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- |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 39A (Tc) | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | TO-263-7 |
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IXTD5N100AMOSFET N-CH 1000V 5A DIE IXYS |
0 | - |
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- |
- | Die | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 1000 V | 5A (Tc) | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | Die |
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IXFX55N50MOSFET N-CH 500V 55A PLUS247-3 IXYS |
0 | - |
|
规格书 |
HiPerFET™ | TO-247-3 Variant | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 55A (Tc) | 10V | 80mOhm @ 500mA, 10V | 4.5V @ 8mA | 330 nC @ 10 V | ±20V | 9400 pF @ 25 V | - | 625W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PLUS247™-3 |
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IXFR50N50MOSFET N-CH 500V 43A ISOPLUS247 IXYS |
0 | - |
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- |
HiPerFET™ | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 43A (Tc) | 10V | 100mOhm @ 25A, 10V | 4.5V @ 8mA | 330 nC @ 10 V | ±20V | 9400 pF @ 25 V | - | 400W (Tc) | -40°C ~ 150°C (TJ) | - | - | Through Hole | ISOPLUS247™ |
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IXFK55N50MOSFET N-CH 500V 55A TO264AA IXYS |
0 | - |
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规格书 |
HiPerFET™ | TO-264-3, TO-264AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 55A (Tc) | 10V | 90mOhm @ 27.5A, 10V | 4.5V @ 8mA | 330 nC @ 10 V | ±20V | 9400 pF @ 25 V | - | 625W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264AA (IXFK) |
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IXFE44N50QMOSFET N-CH 500V 39A SOT-227B IXYS |
0 | - |
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- |
HiPerFET™, Q Class | SOT-227-4, miniBLOC | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 39A (Tc) | 10V | 120mOhm @ 22A, 10V | 4V @ 4mA | 190 nC @ 10 V | ±20V | 7000 pF @ 25 V | - | 400W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
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IXFK24N100MOSFET N-CH 1KV 24A TO-264AA IXYS |
0 | - |
|
规格书 |
HiPerFET™ | TO-264-3, TO-264AA | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 1000 V | 24A (Tc) | 10V | 390mOhm @ 12A, 10V | 5.5V @ 8mA | 267 nC @ 10 V | ±20V | 8700 pF @ 25 V | - | 560W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264AA (IXFK) |
