上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IXFN210N30P3MOSFET N-CH 300V 192A SOT227B IXYS |
300 | - |
|
规格书 |
HiPerFET™, Polar3™ | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 192A (Tc) | 10V | 14.5mOhm @ 105A, 10V | 5V @ 8mA | 268 nC @ 10 V | ±20V | 16200 pF @ 25 V | - | 1500W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
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IXKK85N60CMOSFET N-CH 600V 85A TO264A IXYS |
138 | - |
|
规格书 |
CoolMOS™ | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 85A (Tc) | 10V | 36mOhm @ 55A, 10V | 4V @ 4mA | 650 nC @ 10 V | ±20V | - | - | - | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264AA |
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IXTX8N150LMOSFET N-CH 1500V 8A PLUS247-3 IXYS |
256 | - |
|
规格书 |
Linear | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1500 V | 8A (Tc) | 20V | 3.6Ohm @ 4A, 20V | 8V @ 250µA | 250 nC @ 15 V | ±30V | 8000 pF @ 25 V | - | 700W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PLUS247™-3 |
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IXFN80N50Q3MOSFET N-CH 500V 63A SOT227B IXYS |
140 | - |
|
规格书 |
HiPerFET™, Q3 Class | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 63A (Tc) | 10V | 65mOhm @ 40A, 10V | 6.5V @ 8mA | 200 nC @ 10 V | ±30V | 10000 pF @ 25 V | - | 780W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
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IXTF1R4N450MOSFET N-CH 4500V 1.4A I4PAC IXYS |
41 | - |
|
规格书 |
- | i4-Pac™-5 (3 Leads) | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 4500 V | 1.4A (Tc) | 10V | 40Ohm @ 50mA, 10V | 6V @ 250µA | 88 nC @ 10 V | ±20V | 3300 pF @ 25 V | - | 190W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | ISOPLUS i4-PAC™ |
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IXTP24N65X2MMOSFET N-CH 650V 24A TO220 IXYS |
295 | - |
|
规格书 |
Ultra X2 | TO-220-3 Full Pack, Isolated Tab | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 24A (Tc) | 10V | 145mOhm @ 12A, 10V | 5V @ 250µA | 36 nC @ 10 V | ±30V | 2060 pF @ 25 V | - | 37W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 Isolated Tab |
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IXFP30N25X3MMOSFET N-CH 250V 30A TO220 IXYS |
262 | - |
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规格书 |
HiPerFET™, Ultra X3 | TO-220-3 Full Pack, Isolated Tab | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 30A (Tc) | 10V | 60mOhm @ 15A, 10V | 4.5V @ 500µA | 21 nC @ 10 V | ±20V | 1450 pF @ 25 V | - | 36W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 Isolated Tab |
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MXB12R600DPHFCMOSFET N-CH 600V 15A IXYS |
243 | - |
|
规格书 |
- | ISOPLUSi5-PAK™ | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 13A (Tc) | - | - | - | - | - | - | - | - | - | - | - | Through Hole | ISOPLUS i4-PAC™ |
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IXFN55N120SKSIC AND MULTICHIP DISCRETE IXYS |
182 | - |
|
规格书 |
- | SOT-227-4, miniBLOC | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 54A (Tc) | 15V | 42mOhm @ 40A, 15V | 3.6V @ 12mA | 107 nC @ 15 V | +15V, -4V | 3360 pF @ 1000 V | - | - | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
|
IXFH270N06T3MOSFET N-CH 60V 270A TO247 IXYS |
495 | - |
|
规格书 |
HiperFET™, TrenchT3™ | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 270A (Tc) | 10V | 3.1mOhm @ 100A, 10V | 4V @ 250µA | 200 nC @ 10 V | ±20V | 12600 pF @ 25 V | - | 480W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247 (IXTH) |
