上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IXFT18N90PMOSFET N-CH 900V 18A TO268 IXYS |
0 | - |
|
规格书 |
HiPerFET™, Polar | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 900 V | 18A (Tc) | 10V | 600mOhm @ 500mA, 10V | 6.5V @ 1mA | 97 nC @ 10 V | ±30V | 5230 pF @ 25 V | - | 540W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-268AA |
|
IXFA270N06T3MOSFET N-CH 60V 270A TO263AA IXYS |
0 | - |
|
规格书 |
HiperFET™, TrenchT3™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 270A (Tc) | 10V | 3.1mOhm @ 100A, 10V | 4V @ 250µA | 200 nC @ 10 V | ±20V | 12600 pF @ 25 V | - | 480W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263AA |
|
IXFK150N15PMOSFET N-CH 150V 150A TO264AA IXYS |
0 | - |
|
规格书 |
HiPerFET™, Polar | TO-264-3, TO-264AA | Box | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 150A (Tc) | 10V | 13mOhm @ 500mA, 10V | 5V @ 4mA | 190 nC @ 10 V | ±20V | 5800 pF @ 25 V | - | 714W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-264AA (IXFK) |
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IXTH6N80AMOSFET N-CH 800V 6A TO247 IXYS |
0 | - |
|
- |
- | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 800 V | 6A (Tc) | 10V | 1.4Ohm @ 3A, 10V | 4.5V @ 250µA | 130 nC @ 10 V | ±20V | 2800 pF @ 25 V | - | 180W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 (IXTH) |
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IXFT26N50MOSFET N-CH 500V 26A TO268 IXYS |
0 | - |
|
规格书 |
HiPerFET™ | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 26A (Tc) | 10V | 200mOhm @ 13A, 10V | 4V @ 4mA | 160 nC @ 10 V | ±20V | 4200 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-268AA |
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IXFR24N50MOSFET N-CH 500V 24A ISOPLUS247 IXYS |
0 | - |
|
规格书 |
HiPerFET™ | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 24A (Tc) | 10V | 230mOhm @ 12A, 10V | 4V @ 4mA | 160 nC @ 10 V | ±20V | 4200 pF @ 25 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | ISOPLUS247™ |
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IRFP470MOSFET N-CH 500V 24A TO247AD IXYS |
0 | - |
|
规格书 |
MegaMOS™ | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 24A (Tc) | 10V | 230mOhm @ 12A, 10V | 4V @ 250µA | 190 nC @ 10 V | ±20V | 4200 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AD |
|
IXTR90P10PMOSFET P-CH 100V 57A ISOPLUS247 IXYS |
0 | - |
|
规格书 |
PolarP™ | TO-247-3 | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 100 V | 57A (Tc) | 10V | 27mOhm @ 45A, 10V | 4V @ 250µA | 120 nC @ 10 V | ±20V | 5800 pF @ 25 V | - | 190W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | ISOPLUS247™ |
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IXFT6N100QMOSFET N-CH 1000V 6A TO268 IXYS |
0 | - |
|
规格书 |
HiPerFET™ | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 1000 V | 6A (Tc) | 10V | 1.9Ohm @ 3A, 10V | 4.5V @ 2.5mA | 48 nC @ 10 V | ±20V | 2200 pF @ 25 V | - | 180W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-268AA |
|
IXTF200N10TMOSFET N-CH 100V 90A I4PAC IXYS |
0 | - |
|
规格书 |
Trench | i4-Pac™-5 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 90A (Tc) | 10V | 7mOhm @ 50A, 10V | 4.5V @ 250µA | 152 nC @ 10 V | ±30V | 9400 pF @ 25 V | - | 156W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | ISOPLUS i4-PAC™ |
