上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SMC6280PMOSFET N-CH Fairchild Semiconductor |
9,000 | - |
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- |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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NDTL01N60ZT1GMOSFET N-CH 600V 250MA SOT223 Fairchild Semiconductor |
6,000 | - |
|
规格书 |
- | TO-261-4, TO-261AA | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 250mA (Tc) | - | 15Ohm @ 400mA, 10V | 4.5V @ 50µA | 4.9 nC @ 10 V | ±30V | 92 pF @ 25 V | - | 2W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-223 (TO-261) |
|
IRFS634BN-CHANNEL POWER MOSFET Fairchild Semiconductor |
4,633 | - |
|
规格书 |
- | TO-220-3 Full Pack | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 8.1A (Tj) | 10V | 450mOhm @ 4.05A, 10V | 4V @ 250µA | 38 nC @ 10 V | ±30V | 1000 pF @ 25 V | - | 38W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F-3 |
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IRFS634BTTRANS MOSFET N-CH 250V 8.1A T/R Fairchild Semiconductor |
3,482 | - |
|
规格书 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
SFI9Z14TUP-CHANNEL POWER MOSFET Fairchild Semiconductor |
3,000 | - |
|
规格书 |
- | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 6.7A (Tc) | 10V | 500mOhm @ 3.4A, 10V | 4V @ 250µA | 11 nC @ 10 V | ±30V | 350 pF @ 25 V | - | 3.8W (Ta), 38W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 (I2PAK) |
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IRFS720BN-CHANNEL POWER MOSFET Fairchild Semiconductor |
2,317 | - |
|
规格书 |
- | TO-220-3 Full Pack | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 3.3A (Tj) | 10V | 1.75Ohm @ 1.65A, 10V | 4V @ 250µA | 18 nC @ 10 V | ±30V | 600 pF @ 25 V | - | 33W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F |
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IRFR220BTMN-CHANNEL POWER MOSFET Fairchild Semiconductor |
1,760 | - |
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规格书 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 4.6A (Tc) | 10V | 800mOhm @ 2.3A, 10V | 4V @ 250µA | 16 nC @ 10 V | ±30V | 390 pF @ 25 V | - | 2.5W (Ta), 40W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
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SSR2N60BTFN-CHANNEL POWER MOSFET Fairchild Semiconductor |
165,500 | - |
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规格书 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 1.8A (Tc) | 10V | 5Ohm @ 900mA, 10V | 4V @ 250µA | 17 nC @ 10 V | ±30V | 490 pF @ 25 V | - | 2.5W (Ta), 44W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
|
NDS356AP-NB8L005A-30V P-CHANNEL LOGIC LEVEL ENHAN Fairchild Semiconductor |
73,580 | - |
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规格书 |
- | TO-236-3, SC-59, SOT-23-3 | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 1.1A (Ta) | 4.5V, 10V | 200mOhm @ 1.3A, 10V | 2.5V @ 250µA | 4.4 nC @ 5 V | ±20V | 280 pF @ 10 V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-23-3 |
|
SSR1N60BTMMOSFET N-CH 600V 900MA DPAK Fairchild Semiconductor |
28,521 | - |
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规格书 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 900mA (Tc) | 10V | 12Ohm @ 450mA, 10V | 4V @ 250µA | 7.7 nC @ 10 V | ±30V | 215 pF @ 25 V | - | 2.5W (Ta), 28W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
