上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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HUF76423D3SMOSFET N-CH 60V 20A TO252AA Fairchild Semiconductor |
7,686 | - |
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规格书 |
UltraFET™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 20A (Tc) | 4.5V, 10V | 32mOhm @ 20A, 10V | 3V @ 250µA | 34 nC @ 10 V | ±16V | 1060 pF @ 25 V | - | 85W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
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FQI2N30TUMOSFET N-CH 300V 2.1A I2PAK Fairchild Semiconductor |
7,063 | - |
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规格书 |
QFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 300 V | 2.1A (Tc) | 10V | 3.7Ohm @ 1.05A, 10V | 5V @ 250µA | 5 nC @ 10 V | ±30V | 130 pF @ 25 V | - | 3.13W (Ta), 40W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-262 (I2PAK) |
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HUF76423D3MOSFET N-CH 60V 20A IPAK Fairchild Semiconductor |
6,794 | - |
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规格书 |
UltraFET™ | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 20A (Tc) | 4.5V, 10V | 32mOhm @ 20A, 10V | 3V @ 250µA | 34 nC @ 10 V | ±16V | 1060 pF @ 25 V | - | 85W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK |
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FQI5N15TUMOSFET N-CH 150V 5.4A I2PAK Fairchild Semiconductor |
5,717 | - |
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规格书 |
QFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 5.4A (Tc) | 10V | 800mOhm @ 2.7A, 10V | 4V @ 250µA | 7 nC @ 10 V | ±25V | 230 pF @ 25 V | - | 3.75W (Ta), 54W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 (I2PAK) |
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HUFA75329S3STMOSFET N-CH 55V 49A D2PAK Fairchild Semiconductor |
3,596 | - |
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规格书 |
UltraFET™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 49A (Tc) | 10V | 24mOhm @ 49A, 10V | 4V @ 250µA | 75 nC @ 20 V | ±20V | 1060 pF @ 25 V | - | 128W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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FQP2N50MOSFET N-CH 500V 2.1A TO220-3 Fairchild Semiconductor |
3,015 | - |
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规格书 |
QFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 2.1A (Tc) | 10V | 5.3Ohm @ 1.05A, 10V | 5V @ 250µA | 8 nC @ 10 V | ±30V | 230 pF @ 25 V | - | 55W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-3 |
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FQB3N30TMMOSFET N-CH 300V 3.2A D2PAK Fairchild Semiconductor |
2,934 | - |
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规格书 |
QFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 300 V | 3.2A (Tc) | 10V | 2.2Ohm @ 1.6A, 10V | 5V @ 250µA | 7 nC @ 10 V | ±30V | 230 pF @ 25 V | - | 3.13W (Ta), 55W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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FQP5N30MOSFET N-CH 300V 5.4A TO220-3 Fairchild Semiconductor |
2,635 | - |
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规格书 |
QFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 300 V | 5.4A (Tc) | 10V | 900mOhm @ 2.7A, 10V | 5V @ 250µA | 13 nC @ 10 V | ±30V | 430 pF @ 25 V | - | 70W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-3 |
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FQD4N50TFMOSFET N-CH 500V 2.6A DPAK Fairchild Semiconductor |
2,257 | - |
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规格书 |
QFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 2.6A (Tc) | 10V | 2.7Ohm @ 1.3A, 10V | 5V @ 250µA | 13 nC @ 10 V | ±30V | 460 pF @ 25 V | - | 2.5W (Ta), 45W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
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FQI7P06TUMOSFET P-CH 60V 7A I2PAK Fairchild Semiconductor |
2,199 | - |
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规格书 |
QFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 60 V | 7A (Tc) | 10V | 410mOhm @ 3.5A, 10V | 4V @ 250µA | 8.2 nC @ 10 V | ±25V | 295 pF @ 25 V | - | 3.75W (Ta), 45W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 (I2PAK) |
