上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
CSD25310Q2TMOSFET P-CH 20V 20A 6WSON Texas Instruments |
17,230 | - |
|
规格书 |
NexFET™ | 6-WDFN Exposed Pad | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 20A (Ta) | 1.8V, 4.5V | 23.9mOhm @ 5A, 4.5V | 1.1V @ 250µA | 4.7 nC @ 4.5 V | ±8V | 655 pF @ 10 V | - | 2.9W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 6-WSON (2x2) |
|
CSD17522Q5AMOSFET N-CH 30V 87A 8VSON Texas Instruments |
12,791 | - |
|
规格书 |
NexFET™ | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 87A (Tc) | 4.5V, 10V | 8.1mOhm @ 14A, 10V | 2V @ 250µA | 4.3 nC @ 4.5 V | ±20V | 695 pF @ 15 V | - | 3W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-VSONP (5x6) |
|
CSD22204WTMOSFET P-CH 8V 5A 9DSBGA Texas Instruments |
5,417 | - |
|
规格书 |
NexFET™ | 9-UFBGA, DSBGA | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 8 V | 5A (Ta) | 2.5V, 4.5V | 9.9mOhm @ 2A, 4.5V | 950mV @ 250µA | 24.6 nC @ 4.5 V | -6V | 1130 pF @ 4 V | - | 1.7W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 9-DSBGA |
|
CSD19538Q3ATMOSFET N-CH 100V 15A 8VSON Texas Instruments |
4,251 | - |
|
规格书 |
NexFET™ | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 15A (Ta) | 6V, 10V | 59mOhm @ 5A, 10V | 3.8V @ 250µA | 4.3 nC @ 10 V | ±20V | 454 pF @ 50 V | - | 2.8W (Ta), 23W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-VSONP (3x3.3) |
|
|
CSD17306Q5AMOSFET N-CH 30V 24A/100A 8VSON Texas Instruments |
3,928 | - |
|
规格书 |
NexFET™ | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 24A (Ta), 100A (Tc) | 3V, 8V | 3.7mOhm @ 22A, 8V | 1.6V @ 250µA | 15.3 nC @ 4.5 V | +10V, -8V | 2170 pF @ 15 V | - | 3.2W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-VSONP (5x6) |
.jpg)
|
CSD25404Q3TMOSFET P-CH 20V 104A 8VSON Texas Instruments |
6,684 | - |
|
规格书 |
NexFET™ | 8-PowerVDFN | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 104A (Tc) | 1.8V, 4.5V | 6.5mOhm @ 10A, 4.5V | 1.15V @ 250µA | 14.1 nC @ 4.5 V | ±12V | 2120 pF @ 10 V | - | 2.8W (Ta), 96W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-VSONP (3x3.3) |
|
|
CSD17578Q3ATMOSFET N-CH 30V 20A 8VSON Texas Instruments |
4,164 | - |
|
规格书 |
NexFET™ | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 20A (Ta) | 4.5V, 10V | 7.3mOhm @ 10A, 10V | 1.9V @ 250µA | 22.2 nC @ 10 V | ±20V | 1590 pF @ 15 V | - | 3.2W (Ta), 37W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-VSONP (3x3.3) |
|
|
CSD17579Q5ATMOSFET N-CH 30V 25A 8VSON Texas Instruments |
2,274 | - |
|
规格书 |
NexFET™ | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 25A (Ta) | 4.5V, 10V | 9.7mOhm @ 8A, 10V | 2V @ 250µA | 15.1 nC @ 10 V | ±20V | 1030 pF @ 15 V | - | 3.1W (Ta), 36W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-VSONP (5x6) |
|
|
CSD22206WTMOSFET P-CH 8V 5A 9DSBGA Texas Instruments |
15,401 | - |
|
规格书 |
NexFET™ | 9-UFBGA, DSBGA | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 8 V | 5A (Ta) | 2.5V, 4.5V | 5.7mOhm @ 2A, 4.5V | 1.05V @ 250µA | 14.6 nC @ 4.5 V | -6V | 2275 pF @ 4 V | - | 1.7W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 9-DSBGA |
|
|
CSD16413Q5AMOSFET N-CH 25V 24A/100A 8VSON Texas Instruments |
7,424 | - |
|
规格书 |
NexFET™ | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 24A (Ta), 100A (Tc) | 4.5V, 10V | 3.9mOhm @ 24A, 10V | 1.9V @ 250µA | 11.7 nC @ 4.5 V | +16V, -12V | 1780 pF @ 12.5 V | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-VSONP (5x6) |
