制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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RCD100N20TLMOSFET N-CH 200V 10A CPT3 Rohm Semiconductor |
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![]() 规格书 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 200 V | 10A (Tc) | 10V | 182mOhm @ 5A, 10V | 5.25V @ 1mA | 25 nC @ 10 V | ±30V | 1400 pF @ 25 V | - | 850mW (Ta), 20W (Tc) | 150°C (TJ) | - | - | Surface Mount | CPT3 |
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RSD045P05TLMOSFET P-CH 45V CPT3 Rohm Semiconductor |
0 | - |
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![]() 规格书 |
- | - | Tape & Reel (TR) | Last Time Buy | - | - | - | 4.5A (Tc) | - | - | - | - | - | - | - | - | - | - | - | - | - |
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RSD080P05TLMOSFET P-CH 45V 8A CPT3 Rohm Semiconductor |
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![]() 规格书 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Last Time Buy | P-Channel | MOSFET (Metal Oxide) | 45 V | 8A (Ta) | 4V, 10V | 91mOhm @ 8A, 10V | 3V @ 1mA | 93.4 nC @ 5 V | ±20V | 11000 pF @ 10 V | - | 15W (Tc) | 150°C (TJ) | - | - | Surface Mount | CPT3 |
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RSD221N06TLMOSFET N-CH 60V 22A CPT3 Rohm Semiconductor |
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![]() 规格书 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 60 V | 22A (Tc) | 4V, 10V | 26mOhm @ 22A, 10V | 3V @ 1mA | 30 nC @ 10 V | ±20V | 1500 pF @ 10 V | - | 850mW (Ta), 20W (Tc) | 150°C (TJ) | - | - | Surface Mount | CPT3 |
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RSJ300N10TLMOSFET N-CH 100V 30A LPTS Rohm Semiconductor |
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- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 30A (Ta) | 4V, 10V | 52mOhm @ 15A, 10V | 2.5V @ 1mA | 50 nC @ 10 V | ±20V | 2200 pF @ 25 V | - | 50W (Tc) | 150°C (TJ) | - | - | Surface Mount | LPTS |
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ES6U42T2RMOSFET P-CH 20V 1A 6WEMT Rohm Semiconductor |
0 | - |
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![]() 规格书 |
- | 6-SMD, Flat Leads | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 1A (Ta) | 2.5V, 4.5V | 390mOhm @ 1A, 4.5V | 2V @ 1mA | 2.1 nC @ 4.5 V | ±12V | 150 pF @ 10 V | Schottky Diode (Body) | 700mW (Ta) | 150°C (TJ) | - | - | Surface Mount | 6-WEMT |
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RUE002N05TLMOSFET N-CH 50V 200MA EMT3 Rohm Semiconductor |
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![]() 规格书 |
- | SC-75, SOT-416 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 50 V | 200mA (Ta) | 1.2V, 4.5V | 2.2Ohm @ 200mA, 4.5V | 1V @ 1mA | - | ±8V | 25 pF @ 10 V | - | 150mW (Ta) | 150°C (TJ) | - | - | Surface Mount | EMT3 |
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RW1C015UNT2RMOSFET N-CH 20V 1.5A 6WEMT Rohm Semiconductor |
0 | - |
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![]() 规格书 |
- | 6-SMD, Flat Leads | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 1.5A (Ta) | 1.5V, 4.5V | 180mOhm @ 1.5A, 4.5V | 1V @ 1mA | 1.8 nC @ 4.5 V | ±10V | 110 pF @ 10 V | - | 400mW (Ta) | 150°C (TJ) | - | - | Surface Mount | 6-WEMT |
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TT8U2TCRMOSFET P-CH 20V 2.4A 8TSST Rohm Semiconductor |
0 | - |
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![]() 规格书 |
- | 8-SMD, Flat Leads | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 2.4A (Ta) | 1.5V, 4.5V | 105mOhm @ 2.4A, 4.5V | 1V @ 1mA | 6.7 nC @ 4.5 V | ±10V | 850 pF @ 10 V | Schottky Diode (Isolated) | 1.25W (Ta) | 150°C (TJ) | - | - | Surface Mount | 8-TSST |
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SCH2080KECSICFET N-CH 1200V 40A TO247 Rohm Semiconductor |
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![]() 规格书 |
- | TO-247-3 | Tube | Obsolete | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 40A (Tc) | 18V | 117mOhm @ 10A, 18V | 4V @ 4.4mA | 106 nC @ 18 V | +22V, -6V | 1850 pF @ 800 V | - | 262W (Tc) | 175°C (TJ) | - | - | Through Hole | TO-247 |