上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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RSS070P05FRATBMOSFET P-CH 45V 7A 8SOP Rohm Semiconductor |
0 | - |
|
规格书 |
- | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 45 V | 7A (Ta) | 4V, 10V | 27mOhm @ 7A, 10V | 2.5V @ 1mA | 47.6 nC @ 5 V | ±20V | 4100 pF @ 10 V | - | 2W (Ta) | 150°C (TJ) | Automotive | AEC-Q101 | Surface Mount | 8-SOP |
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RSJ10HN06TLMOSFET N-CH 60V 100A LPTS Rohm Semiconductor |
0 | - |
|
规格书 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 100A (Ta) | 4V, 10V | 4.2mOhm @ 50A, 10V | 2.5V @ 1mA | 202 nC @ 10 V | ±20V | 11000 pF @ 10 V | - | 100W (Tc) | 150°C (TJ) | - | - | Surface Mount | LPTS |
|
RS1P600BETB1MOSFET N-CH 100V 17.5A/60A 8HSOP Rohm Semiconductor |
0 | - |
|
规格书 |
- | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 17.5A (Ta), 60A (Tc) | 10V | 9.7mOhm @ 17.5A, 10V | 4V @ 500µA | 33 nC @ 10 V | ±20V | 2200 pF @ 50 V | - | 3W (Ta), 35W (Tc) | 150°C (TJ) | - | - | Surface Mount | 8-HSOP |
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SCT2450KECSICFET N-CH 1200V 10A TO247 Rohm Semiconductor |
0 | - |
|
规格书 |
- | TO-247-3 | Tube | Obsolete | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 10A (Tc) | 18V | 585mOhm @ 3A, 18V | 4V @ 900µA | 27 nC @ 18 V | +22V, -6V | 463 pF @ 800 V | - | 85W (Tc) | 175°C (TJ) | - | - | Through Hole | TO-247 |
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RCJ330N25TLMOSFET N-CH 250V 33A LPTS Rohm Semiconductor |
0 | - |
|
规格书 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 250 V | 33A (Tc) | 10V | 105mOhm @ 16.5A, 10V | 5V @ 1mA | 80 nC @ 10 V | ±30V | 4500 pF @ 25 V | - | 1.56W (Ta), 40W (Tc) | 150°C (TJ) | - | - | Surface Mount | LPTS |
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R6024KNZ1C9MOSFET N-CHANNEL 600V 24A TO247 Rohm Semiconductor |
3 | - |
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规格书 |
- | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 24A (Tc) | 10V | 165mOhm @ 11.3A, 10V | 5V @ 1mA | 45 nC @ 10 V | ±20V | 2000 pF @ 25 V | - | 245W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 |
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SCT2280KECSICFET N-CH 1200V 14A TO247 Rohm Semiconductor |
0 | - |
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规格书 |
- | TO-247-3 | Tube | Obsolete | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 14A (Tc) | 18V | 364mOhm @ 4A, 18V | 4V @ 1.4mA | 36 nC @ 18 V | +22V, -6V | 667 pF @ 800 V | - | 108W (Tc) | 175°C (TJ) | - | - | Through Hole | TO-247 |
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R6035KNZC8MOSFET N-CHANNEL 600V 35A TO3PF Rohm Semiconductor |
0 | - |
|
规格书 |
- | TO-3P-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 35A (Tc) | 10V | 102mOhm @ 18.1A, 10V | 5V @ 1mA | 72 nC @ 10 V | ±20V | 3000 pF @ 25 V | - | 102W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-3PF |
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R6020FNXMOSFET N-CH 600V 20A TO220FM Rohm Semiconductor |
0 | - |
|
规格书 |
- | TO-220-3 Full Pack | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 20A (Tc) | 10V | 250mOhm @ 10A, 10V | 5V @ 1mA | 65 nC @ 10 V | ±30V | 2040 pF @ 25 V | - | 50W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220FM |
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R6020ANXMOSFET N-CH 600V 20A TO220FM Rohm Semiconductor |
9 | - |
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规格书 |
- | TO-220-3 Full Pack | Bulk | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600 V | 20A (Tc) | 10V | 220mOhm @ 10A, 10V | 4.5V @ 1mA | 65 nC @ 10 V | ±30V | 2040 pF @ 25 V | - | 85W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220FM |
