上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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R6015ENJTLMOSFET N-CH 600V 15A LPTS Rohm Semiconductor |
4 | - |
|
规格书 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 15A (Tc) | 10V | 290mOhm @ 6.5A, 10V | 4V @ 1mA | 40 nC @ 10 V | ±20V | 910 pF @ 25 V | - | 40W (Tc) | 150°C (TJ) | - | - | Surface Mount | LPTS |
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R6024KNJTLMOSFET N-CHANNEL 600V 24A LPTS Rohm Semiconductor |
0 | - |
|
规格书 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 24A (Tc) | 10V | 165mOhm @ 11.3A, 10V | 5V @ 1mA | 45 nC @ 10 V | ±20V | 2000 pF @ 25 V | - | 245W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | LPTS |
|
R6012JNXC7GMOSFET N-CH 600V 12A TO220FM Rohm Semiconductor |
0 | - |
|
规格书 |
- | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 12A (Tc) | 15V | 390mOhm @ 6A, 15V | 7V @ 2.5mA | 28 nC @ 15 V | ±30V | 900 pF @ 100 V | - | 60W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220FM |
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R6524KNJTLMOSFET N-CH 650V 24A LPTS Rohm Semiconductor |
0 | - |
|
规格书 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 24A (Tc) | 10V | 185mOhm @ 11.3A, 10V | 5V @ 750µA | 45 nC @ 10 V | ±20V | 1850 pF @ 25 V | - | 245W (Tc) | 150°C (TJ) | - | - | Surface Mount | LPTS |
|
R6047KNZ4C13MOSFET N-CH 600V 47A TO247 Rohm Semiconductor |
0 | - |
|
规格书 |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 47A (Tc) | 10V | 72mOhm @ 25.8A, 10V | 5V @ 1mA | 100 nC @ 10 V | ±20V | 4300 pF @ 25 V | - | 481W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-247 |
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R6547KNZ4C13MOSFET N-CH 650V 47A TO247 Rohm Semiconductor |
0 | - |
|
规格书 |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 47A (Tc) | 10V | 80mOhm @ 25.8A, 10V | 5V @ 1.72mA | 100 nC @ 10 V | ±20V | 4100 pF @ 25 V | - | 480W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-247 |
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R6076KNZ4C13MOSFET N-CH 600V 76A TO247 Rohm Semiconductor |
0 | - |
|
规格书 |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 76A (Tc) | 10V | 42mOhm @ 44.4A, 10V | 5V @ 1mA | 165 nC @ 10 V | ±20V | 7400 pF @ 25 V | - | 735W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-247 |
|
SCT3105KLGC11SICFET N-CH 1200V 24A TO247N Rohm Semiconductor |
0 | - |
|
规格书 |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 24A (Tc) | 18V | 137mOhm @ 7.6A, 18V | 5.6V @ 3.81mA | 51 nC @ 18 V | +22V, -4V | 574 pF @ 800 V | - | 134W | 175°C (TJ) | - | - | Through Hole | TO-247N |
|
BSM300C12P3E301SICFET N-CH 1200V 300A MODULE Rohm Semiconductor |
0 | - |
|
规格书 |
- | Module | Bulk | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 300A (Tc) | - | - | 5.6V @ 80mA | - | +22V, -4V | 1500 pF @ 10 V | - | 1360W (Tc) | -40°C ~ 150°C (TJ) | - | - | - | Module |
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RQ3N060ATTB1PCH -80V -18A, HSMT8, POWER MOSF Rohm Semiconductor |
0 | - |
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- |
* | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
