上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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RCJ160N20TLMOSFET N-CH 200V 16A LPTS Rohm Semiconductor |
1,000 | - |
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规格书 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 16A (Tc) | 10V | 180mOhm @ 8A, 10V | 5.25V @ 1mA | 26 nC @ 10 V | ±30V | 1370 pF @ 25 V | - | 1.56W (Ta), 40W (Tc) | 150°C (TJ) | - | - | Surface Mount | LPTS |
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R6504KNJTLMOSFET N-CH 650V 4A LPTS Rohm Semiconductor |
72 | - |
|
规格书 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 4A (Tc) | 10V | 1.05Ohm @ 1.5A, 10V | 5V @ 130µA | 10 nC @ 10 V | ±20V | 270 pF @ 25 V | - | 58W (Tc) | 150°C (TJ) | - | - | Surface Mount | LPTS |
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R6507KNJTLMOSFET N-CH 650V 7A LPTS Rohm Semiconductor |
80 | - |
|
规格书 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 7A (Tc) | 10V | 665mOhm @ 2.4A, 10V | 5V @ 200µA | 14.5 nC @ 10 V | ±20V | 470 pF @ 25 V | - | 78W (Tc) | 150°C (TJ) | - | - | Surface Mount | LPTS |
|
R6511ENXC7G650V 11A TO-220FM, LOW-NOISE POW Rohm Semiconductor |
40 | - |
|
规格书 |
- | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 11A (Ta) | 10V | 400mOhm @ 3.8A, 10V | 4V @ 320µA | 32 nC @ 10 V | ±20V | 670 pF @ 25 V | - | 53W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220FM |
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R6509KNJTLMOSFET N-CH 650V 9A LPTS Rohm Semiconductor |
87 | - |
|
规格书 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 9A (Tc) | 10V | 585mOhm @ 2.8A, 10V | 5V @ 230µA | 16.5 nC @ 10 V | ±20V | 540 pF @ 25 V | - | 94W (Tc) | 150°C (TJ) | - | - | Surface Mount | LPTS |
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R6511ENJTLMOSFET N-CH 650V 11A LPTS Rohm Semiconductor |
90 | - |
|
规格书 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 11A (Tc) | 10V | 400mOhm @ 3.8A, 10V | 4V @ 320µA | 32 nC @ 10 V | ±20V | 670 pF @ 25 V | - | 124W (Tc) | 150°C (TJ) | - | - | Surface Mount | LPTS |
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R6515KNJTLMOSFET N-CH 650V 15A LPTS Rohm Semiconductor |
80 | - |
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规格书 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 15A (Tc) | 10V | 315mOhm @ 6.5A, 10V | 5V @ 430µA | 27.5 nC @ 10 V | ±20V | 1050 pF @ 25 V | - | 184W (Tc) | 150°C (TJ) | - | - | Surface Mount | LPTS |
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R6520KNJTLMOSFET N-CH 650V 20A LPTS Rohm Semiconductor |
98 | - |
|
规格书 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 20A (Tc) | 10V | 205mOhm @ 9.5A, 10V | 5V @ 630µA | 40 nC @ 10 V | ±20V | 1550 pF @ 25 V | - | 231W (Tc) | 150°C (TJ) | - | - | Surface Mount | LPTS |
|
R6030ENZ4C13MOSFET N-CH 600V 30A TO247 Rohm Semiconductor |
15 | - |
|
规格书 |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 30A (Tc) | 10V | 130mOhm @ 14.5A, 10V | 4V @ 1mA | 85 nC @ 10 V | ±20V | 2100 pF @ 25 V | - | 305W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-247 |
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R6042JNZ4C13MOSFET N-CH 600V 42A TO247G Rohm Semiconductor |
96 | - |
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规格书 |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 42A (Tc) | 15V | 104mOhm @ 21A, 15V | 7V @ 5.5mA | 100 nC @ 15 V | ±30V | 3500 pF @ 100 V | - | 495W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247G |
