制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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SCT3040KLHRC11SICFET N-CH 1200V 55A TO247N Rohm Semiconductor |
849 | - |
|
![]() 规格书 |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 55A (Tc) | 18V | 52mOhm @ 20A, 18V | 5.6V @ 10mA | 107 nC @ 18 V | +22V, -4V | 1337 pF @ 800 V | - | 262W | 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247N |
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SCT3022ALHRC11SICFET N-CH 650V 93A TO247N Rohm Semiconductor |
2,246 | - |
|
![]() 规格书 |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 93A (Tc) | 18V | 28.6mOhm @ 36A, 18V | 5.6V @ 18.2mA | 133 nC @ 18 V | +22V, -4V | 2208 pF @ 500 V | - | 339W | 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247N |
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SCT3030KLHRC11SICFET N-CH 1200V 72A TO247N Rohm Semiconductor |
580 | - |
|
![]() 规格书 |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 72A (Tc) | 18V | 39mOhm @ 27A, 18V | 5.6V @ 13.3mA | 131 nC @ 18 V | +22V, -4V | 2222 pF @ 800 V | - | 339W | 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247N |
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SCT3017ALGC11650V, 118A, THD, TRENCH-STRUCTUR Rohm Semiconductor |
435 | - |
|
![]() 规格书 |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 118A (Tc) | 18V | 22.1mOhm @ 47A, 18V | 5.6V @ 23.5mA | 172 nC @ 18 V | +22V, -4V | 2884 pF @ 500 V | - | 427W | 175°C (TJ) | - | - | Through Hole | TO-247N |
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SCT3017ALHRC11SICFET N-CH 650V 118A TO247N Rohm Semiconductor |
1,098 | - |
|
![]() 规格书 |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 118A (Tc) | 18V | 22.1mOhm @ 47A, 18V | 5.6V @ 23.5mA | 172 nC @ 18 V | +22V, -4V | 2884 pF @ 500 V | - | 427W | 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247N |
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SCT3022KLHRC11SICFET N-CH 1200V 95A TO247N Rohm Semiconductor |
1,127 | - |
|
![]() 规格书 |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 95A (Tc) | 18V | 28.6mOhm @ 36A, 18V | 5.6V @ 18.2mA | 178 nC @ 18 V | +22V, -4V | 2879 pF @ 800 V | - | 427W | 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247N |
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RUU002N05T106MOSFET N-CH 50V 200MA UMT3 Rohm Semiconductor |
2,695 | - |
|
![]() 规格书 |
- | SC-70, SOT-323 | Tape & Reel (TR) | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 50 V | 200mA (Ta) | 1.2V, 4.5V | 2.2Ohm @ 200mA, 4.5V | 1V @ 1mA | - | ±8V | 25 pF @ 10 V | - | 200mW (Ta) | 150°C (TJ) | - | - | Surface Mount | UMT3 |
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RHU003N03FRAT106MOSFET N-CH 30V 300MA UMT3 Rohm Semiconductor |
2,380 | - |
|
![]() 规格书 |
- | SC-70, SOT-323 | Tape & Reel (TR) | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 30 V | 300mA (Ta) | 4V, 10V | 1.2Ohm @ 300mA, 10V | 2.5V @ 1mA | - | ±20V | 20 pF @ 10 V | - | 200mW | 150°C (TJ) | Automotive | AEC-Q101 | Surface Mount | UMT3 |
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RJK005N03FRAT146MOSFET N-CH 30V 500MA SMT3 Rohm Semiconductor |
3,020 | - |
|
![]() 规格书 |
- | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 30 V | 500mA (Ta) | 2.5V, 4.5V | 580mOhm @ 500mA, 4.5V | 1.5V @ 1mA | 4 nC @ 4 V | ±12V | 60 pF @ 10 V | - | 200mW (Ta) | 150°C (TJ) | Automotive | AEC-Q101 | Surface Mount | SMT3 |
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BSS138WAHZGT106NCH 60V 310MA, SOT-323, SMALL SI Rohm Semiconductor |
2,953 | - |
|
![]() 规格书 |
- | SC-70, SOT-323 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 310mA (Ta) | 2.5V, 10V | 2.4Ohm @ 310mA, 10V | 2.3V @ 1mA | - | ±20V | 15 pF @ 30 V | - | 200mW (Ta) | 150°C (TJ) | Automotive | AEC-Q101 | Surface Mount | SOT-323 |