制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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RJ1L12CGNTLLNCH 60V 120A POWER MOSFET: RJ1L1 Rohm Semiconductor |
1,000 | - |
|
![]() 规格书 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 60 V | 120A (Tc) | 4.5V, 10V | 3.4mOhm @ 50A, 10V | 2.5V @ 200µA | 139 nC @ 10 V | ±20V | 7100 pF @ 30 V | - | 166W (Tc) | 150°C (TJ) | - | - | Surface Mount | TO-263AB |
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R6050JNZC17MOSFET N-CH 600V 50A TO3PF Rohm Semiconductor |
189 | - |
|
![]() 规格书 |
- | TO-3P-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 50A (Tc) | 15V | 83mOhm @ 25A, 15V | 7V @ 5mA | 120 nC @ 15 V | ±30V | 4500 pF @ 100 V | - | 120W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-3PF |
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R6024KNZC17MOSFET N-CH 600V 24A TO3PF Rohm Semiconductor |
300 | - |
|
![]() 规格书 |
- | TO-3P-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 24A (Tc) | 10V | 165mOhm @ 11.3A, 10V | 5V @ 1mA | 45 nC @ 10 V | ±20V | 2000 pF @ 25 V | - | 74W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-3PF |
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R6024ENZC17MOSFET N-CH 600V 24A TO3PF Rohm Semiconductor |
300 | - |
|
![]() 规格书 |
- | TO-3P-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 24A (Tc) | 10V | 165mOhm @ 11.3A, 10V | 4V @ 1mA | 70 nC @ 10 V | ±20V | 1650 pF @ 25 V | - | 120W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-3PF |
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R6524KNZC17MOSFET N-CH 650V 24A TO3 Rohm Semiconductor |
300 | - |
|
![]() 规格书 |
- | TO-3P-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 24A (Tc) | 10V | 185mOhm @ 11.3A, 10V | 5V @ 750µA | 45 nC @ 10 V | ±20V | 1850 pF @ 25 V | - | 74W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-3PF |
![]() |
R6524ENZC17MOSFET N-CH 650V 24A TO3 Rohm Semiconductor |
300 | - |
|
![]() 规格书 |
- | TO-3P-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 24A (Tc) | 10V | 185mOhm @ 11.3A, 10V | 4V @ 750µA | 70 nC @ 10 V | ±20V | 1650 pF @ 25 V | - | 74W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-3PF |
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RSJ650N10TLMOSFET N-CH 100V 65A LPTS Rohm Semiconductor |
908 | - |
|
![]() 规格书 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 65A (Ta) | 4V, 10V | 9.1mOhm @ 32.5A, 10V | 2.5V @ 1mA | 260 nC @ 10 V | ±20V | 10780 pF @ 25 V | - | 100W (Tc) | 150°C (TJ) | - | - | Surface Mount | LPTS |
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R6035VNX3C16600V 35A TO-220AB, PRESTOMOS WIT Rohm Semiconductor |
555 | - |
|
![]() 规格书 |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 35A (Tc) | 10V, 15V | 114mOhm @ 8A, 15V | 6.5V @ 1.1mA | 50 nC @ 10 V | ±30V | 2400 pF @ 100 V | - | 347W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220AB |
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RJ1L12BGNTLLNCH 60V 120A POWER MOSFET : RJ1L Rohm Semiconductor |
1,993 | - |
|
![]() 规格书 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 60 V | 120A (Tc) | 4.5V, 10V | 2.9mOhm @ 40A, 10V | 2.5V @ 500µA | 175 nC @ 10 V | ±20V | 9000 pF @ 30 V | - | 192W (Tc) | 150°C (TJ) | - | - | Surface Mount | TO-263AB |
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R6535KNX3C16650V 35A, TO-220AB, HIGH-SPEED S Rohm Semiconductor |
1,000 | - |
|
![]() 规格书 |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 35A (Tc) | 10V | 115mOhm @ 18.1A, 10V | 5V @ 1.3mA | 72 nC @ 10 V | ±20V | 3000 pF @ 25 V | - | 370W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220AB |