上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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NVH050N65S3FSF3 FRFET AUTO 50MOHM TO-247 onsemi |
443 | - |
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规格书 |
SuperFET® III | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 58A (Tc) | 10V | 50mOhm @ 29A, 10V | 5V @ 1.7mA | 123 nC @ 10 V | ±30V | 5404 pF @ 400 V | - | 403W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-3 |
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NVMTS0D7N06CTXGMOSFET N-CH 60V 60.5A/464A 8DFNW onsemi |
2,635 | - |
|
规格书 |
- | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 60.5A (Ta), 464A (Tc) | 10V | 0.72mOhm @ 50A, 10V | 4V @ 250µA | 152 nC @ 10 V | ±20V | 11535 pF @ 30 V | - | 5W (Ta), 294.6W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | 8-DFNW (8.3x8.4) |
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NVH4L095N065SC1SILICON CARBIDE (SIC) MOSFET, NC onsemi |
445 | - |
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规格书 |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 31A (Tc) | 15V, 18V | 105mOhm @ 12A, 18V | 4.3V @ 4mA | 50 nC @ 18 V | +22V, -8V | 956 pF @ 325 V | - | 129W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-4L |
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NVHL075N065SC1SILICON CARBIDE (SIC) MOSFET, NC onsemi |
446 | - |
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规格书 |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 38A (Tc) | 15V, 18V | 85mOhm @ 15A, 18V | 4.3V @ 5mA | 61 nC @ 18 V | +22V, -8V | 1196 pF @ 325 V | - | 148W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-3 |
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NVH4L050N65S3FSF3 FRFET AUTO 50MOHM TO-247-4L onsemi |
405 | - |
|
规格书 |
SuperFET® III, FRFET® | TO-247-4 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 58A (Tc) | 10V | 50mOhm @ 29A, 10V | 5V @ 1.7mA | 123.8 nC @ 10 V | ±30V | 4855 pF @ 400 V | - | 403W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-4L |
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NVH4L075N065SC1SIC MOS TO247-4L 650V onsemi |
240 | - |
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规格书 |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 38A (Tc) | 15V, 18V | 85mOhm @ 15A, 18V | 4.3V @ 5mA | 61 nC @ 18 V | +22V, -8V | 1196 pF @ 325 V | - | 148W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-4L |
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NTHL030N120M3SSILICON CARBIDE (SIC) MOSFET EL onsemi |
351 | - |
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规格书 |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 73A (Tc) | 18V | 39mOhm @ 30A, 18V | 4.4V @ 15mA | 107 nC @ 18 V | +22V, -10V | 2430 pF @ 800 V | - | 313W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-3 |
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NVHL060N090SC1SICFET N-CH 900V 46A TO247-3 onsemi |
383 | - |
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规格书 |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 900 V | 46A (Tc) | 15V | 84mOhm @ 20A, 15V | 4.3V @ 5mA | 87 nC @ 15 V | +19V, -10V | 1770 pF @ 450 V | - | 221W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-3 |
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NVHL040N65S3HFSUPERFER3 FRFET AUTOMOTIVE 40MOH onsemi |
430 | - |
|
规格书 |
SuperFET® III, FRFET® | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 65A (Tc) | 10V | 40mOhm @ 32.5A, 10V | 5V @ 2.1mA | 157 nC @ 10 V | ±30V | 6655 pF @ 400 V | - | 446W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-3 |
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NTH4L030N120M3SSILICON CARBIDE (SIC) MOSFET EL onsemi |
422 | - |
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规格书 |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 73A (Tc) | 18V | 39mOhm @ 30A, 18V | 4.4V @ 15mA | 107 nC @ 18 V | +22V, -10V | 2430 pF @ 800 V | - | 313W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4L |
