上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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FDS6694MOSFET N-CH 30V 12A 8SOIC onsemi |
0 | - |
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规格书 |
PowerTrench® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 12A (Ta) | 4.5V, 10V | 11mOhm @ 12A, 10V | 3V @ 250µA | 19 nC @ 5 V | ±20V | 1293 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | 8-SOIC |
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FDS7788MOSFET N-CH 30V 18A 8SOIC onsemi |
0 | - |
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规格书 |
PowerTrench® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 18A (Ta) | 4.5V, 10V | 4mOhm @ 18A, 10V | 3V @ 250µA | 48 nC @ 5 V | ±20V | 3845 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
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FDS9412AMOSFET N-CH 30V 8A 8SOIC onsemi |
0 | - |
|
规格书 |
PowerTrench® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 8A (Ta) | 4.5V, 10V | 21mOhm @ 8A, 10V | 2.5V @ 250µA | 20 nC @ 10 V | ±20V | 985 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
|
FDU6N50TUMOSFET N-CH 500V 6A IPAK onsemi |
0 | - |
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规格书 |
UniFET™ | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 6A (Tc) | 10V | 900mOhm @ 3A, 10V | 5V @ 250µA | 16.6 nC @ 10 V | ±30V | 940 pF @ 25 V | - | 89W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | IPAK |
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FQA10N80C-F109MOSFET N-CH 800V 10A TO3P onsemi |
0 | - |
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规格书 |
QFET® | TO-3P-3, SC-65-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 800 V | 10A (Tc) | 10V | 1.1Ohm @ 5A, 10V | 5V @ 250µA | 58 nC @ 10 V | ±30V | 2800 pF @ 25 V | - | 240W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-3P |
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FQA10N80_F109MOSFET N-CH 800V 9.8A TO3P onsemi |
0 | - |
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规格书 |
QFET® | TO-3P-3, SC-65-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 800 V | 9.8A (Tc) | 10V | 1.05Ohm @ 4.9A, 10V | 5V @ 250µA | 71 nC @ 10 V | ±30V | 2700 pF @ 25 V | - | 240W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-3P |
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FQA11N90C-F109MOSFET N-CH 900V 11A TO3P onsemi |
0 | - |
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规格书 |
QFET® | TO-3P-3, SC-65-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 900 V | 11A (Tc) | 10V | 1.1Ohm @ 5.5A, 10V | 5V @ 250µA | 80 nC @ 10 V | ±30V | 3290 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-3P |
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FQA11N90-F109MOSFET N-CH 900V 11.4A TO3PN onsemi |
0 | - |
|
规格书 |
QFET® | TO-3P-3, SC-65-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 900 V | 11.4A (Tc) | 10V | 960mOhm @ 5.7A, 10V | 5V @ 250µA | 94 nC @ 10 V | ±30V | 3500 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-3PN |
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FQA13N50CF_F109MOSFET N-CH 500V 15A TO3PN onsemi |
0 | - |
|
规格书 |
FRFET® | TO-3P-3, SC-65-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 15A (Tc) | 10V | 480mOhm @ 7.5A, 10V | 4V @ 250µA | 56 nC @ 10 V | ±30V | 2055 pF @ 25 V | - | 218W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-3PN |
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FQA5N90_F109MOSFET N-CH 900V 5.8A TO3P onsemi |
0 | - |
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规格书 |
QFET® | TO-3P-3, SC-65-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 900 V | 5.8A (Tc) | 10V | 2.3Ohm @ 2.9A, 10V | 5V @ 250µA | 40 nC @ 10 V | ±30V | 1550 pF @ 25 V | - | 185W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-3P |
