上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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HUF75329D3STMOSFET N-CH 55V 20A TO252AA onsemi |
1,483 | - |
|
规格书 |
UltraFET™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 20A (Tc) | 10V | 26mOhm @ 20A, 10V | 4V @ 250µA | 65 nC @ 20 V | ±20V | 1060 pF @ 25 V | - | 128W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA |
|
NTHS4101PT1GMOSFET P-CH 20V 4.8A CHIPFET onsemi |
14,029 | - |
|
规格书 |
- | 8-SMD, Flat Leads | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 4.8A (Tj) | 1.8V, 4.5V | 34mOhm @ 4.8A, 4.5V | 1.5V @ 250µA | 35 nC @ 4.5 V | ±8V | 2100 pF @ 16 V | - | 1.3W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | ChipFET™ |
|
NVTFS6H860NLWFTAGMOSFET N-CH 80V 8.1A/30A 8WDFN onsemi |
2,910 | - |
|
规格书 |
- | 8-PowerWDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 8.1A (Ta), 30A (Tc) | 4.5V, 10V | 20mOhm @ 5A, 10V | 2V @ 30µA | 12 nC @ 10 V | ±20V | 610 pF @ 40 V | - | 3.1W (Ta), 42W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | 8-WDFN (3.3x3.3) |
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NVTFS6H860NLTAGMOSFET N-CH 80V 8.1A/30A 8WDFN onsemi |
2,777 | - |
|
规格书 |
- | 8-PowerWDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 8.1A (Ta), 30A (Tc) | 4.5V, 10V | 20mOhm @ 5A, 10V | 2V @ 30µA | 12 nC @ 10 V | ±20V | 610 pF @ 40 V | - | 3.1W (Ta), 42W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | 8-WDFN (3.3x3.3) |
|
FDMA7672MOSFET N-CH 30V 9A 6MICROFET onsemi |
7,388 | - |
|
规格书 |
PowerTrench® | 6-WDFN Exposed Pad | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 9A (Ta) | 4.5V, 10V | 21mOhm @ 9A, 10V | 3V @ 250µA | 13 nC @ 10 V | ±20V | 760 pF @ 15 V | - | 2.4W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 6-MicroFET (2x2) |
|
SVD2955T4GMOSFET P-CH 60V 12A DPAK onsemi |
4,682 | - |
|
规格书 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 12A (Ta) | 10V | 180mOhm @ 6A, 10V | 4V @ 250µA | 30 nC @ 10 V | ±20V | 750 pF @ 25 V | - | 55W (Tj) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | DPAK |
|
FDWS86380-F085MOSFET N-CH 80V 50A POWER56 onsemi |
1,434 | - |
|
规格书 |
PowerTrench® | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 50A (Tc) | 10V | 13.4mOhm @ 50A, 10V | 4V @ 250µA | 30 nC @ 10 V | ±20V | 1440 pF @ 40 V | - | 75W (Tj) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | Power56 |
|
NVD6416ANLT4G-VF01MOSFET N-CH 100V 19A DPAK-3 onsemi |
189 | - |
|
规格书 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 100 V | 19A (Tc) | 4.5V, 10V | 74mOhm @ 19A, 10V | 2.2V @ 250µA | 40 nC @ 10 V | ±20V | 1000 pF @ 25 V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | DPAK-3 |
|
FDMS7692MOSFET N-CH 30V 14A/28A 8PQFN onsemi |
11,818 | - |
|
规格书 |
PowerTrench® | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 14A (Ta), 28A (Tc) | 4.5V, 10V | 7.5mOhm @ 13A, 10V | 3V @ 250µA | 22 nC @ 10 V | ±20V | 1350 pF @ 15 V | - | 2.5W (Ta), 27W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PQFN (5x6) |
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NCV8440ASTT3GMOSFET N-CH 59V 2.6A SOT223 onsemi |
7,502 | - |
|
规格书 |
- | TO-261-4, TO-261AA | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 59 V | 2.6A (Ta) | 3.5V, 10V | 110mOhm @ 2.6A, 10V | 1.9V @ 100µA | 4.5 nC @ 4.5 V | ±15V | 155 pF @ 35 V | - | 1.69W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-223 (TO-261) |
