上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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FQA6N80MOSFET N-CH 800V 6.3A TO3P onsemi |
0 | - |
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规格书 |
QFET® | TO-3P-3, SC-65-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 800 V | 6.3A (Tc) | 10V | 1.95Ohm @ 3.15A, 10V | 5V @ 250µA | 31 nC @ 10 V | ±30V | 1500 pF @ 25 V | - | 185W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-3P |
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FQAF6N80MOSFET N-CH 800V 4.4A TO3PF onsemi |
0 | - |
|
规格书 |
QFET® | TO-3P-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 800 V | 4.4A (Tc) | 10V | 1.95Ohm @ 2.2A, 10V | 5V @ 250µA | 31 nC @ 10 V | ±30V | 1500 pF @ 25 V | - | 90W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-3PF |
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SFH9250LMOSFET P-CH 200V 19.5A TO3P onsemi |
0 | - |
|
规格书 |
- | TO-3P-3, SC-65-3 | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 200 V | 19.5A (Tc) | 5V | 230mOhm @ 9.8A, 5V | 2V @ 250µA | 120 nC @ 5 V | ±20V | 3250 pF @ 25 V | - | 204W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-3P |
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FQA55N10MOSFET N-CH 100V 61A TO3P onsemi |
0 | - |
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规格书 |
QFET® | TO-3P-3, SC-65-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 61A (Tc) | 10V | 26mOhm @ 30.5A, 10V | 4V @ 250µA | 98 nC @ 10 V | ±25V | 2730 pF @ 25 V | - | 190W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-3P |
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FQB6N90TM_AM002MOSFET N-CH 900V 5.8A D2PAK onsemi |
0 | - |
|
规格书 |
QFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 900 V | 5.8A (Tc) | 10V | 1.9Ohm @ 2.9A, 10V | 5V @ 250µA | 52 nC @ 10 V | ±30V | 1880 pF @ 25 V | - | 3.13W (Ta), 167W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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FQB70N10TM_AM002MOSFET N-CH 100V 57A D2PAK onsemi |
0 | - |
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规格书 |
QFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 57A (Tc) | 10V | 23mOhm @ 28.5A, 10V | 4V @ 250µA | 110 nC @ 10 V | ±25V | 3300 pF @ 25 V | - | 3.75W (Ta), 160W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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FQP13N50MOSFET N-CH 500V 12.5A TO220-3 onsemi |
0 | - |
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规格书 |
QFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 12.5A (Tc) | 10V | 430mOhm @ 6.25A, 10V | 5V @ 250µA | 60 nC @ 10 V | ±30V | 2300 pF @ 25 V | - | 170W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-3 |
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FQA10N60CMOSFET N-CH 600V 10A TO3P onsemi |
0 | - |
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规格书 |
QFET® | TO-3P-3, SC-65-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 10A (Tc) | 10V | 730mOhm @ 5A, 10V | 4V @ 250µA | 57 nC @ 10 V | ±30V | 2040 pF @ 25 V | - | 192W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-3P |
|
FQPF12N60TMOSFET N-CH 600V 5.8A TO220F onsemi |
0 | - |
|
规格书 |
QFET® | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 5.8A (Tc) | 10V | 700mOhm @ 2.9A, 10V | 5V @ 250µA | 54 nC @ 10 V | ±30V | 1900 pF @ 25 V | - | 55W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F-3 |
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FQA8N80CMOSFET N-CH 800V 8.4A TO3P onsemi |
0 | - |
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规格书 |
QFET® | TO-3P-3, SC-65-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 800 V | 8.4A (Tc) | 10V | 1.55Ohm @ 4.2A, 10V | 5V @ 250µA | 45 nC @ 10 V | ±30V | 2050 pF @ 25 V | - | 220W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-3P |
