制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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FQPF7N80CMOSFET N-CH 800V 6.6A TO220F onsemi |
0 | - |
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![]() 规格书 |
QFET® | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 800 V | 6.6A (Tc) | 10V | 1.9Ohm @ 3.3A, 10V | 5V @ 250µA | 35 nC @ 10 V | ±30V | 1680 pF @ 25 V | - | 56W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F-3 |
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FQB32N12V2TMMOSFET N-CH 120V 32A D2PAK onsemi |
0 | - |
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![]() 规格书 |
QFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 120 V | 32A (Tc) | 10V | 50mOhm @ 16A, 10V | 4V @ 250µA | 53 nC @ 10 V | ±30V | 1860 pF @ 25 V | - | 3.75W (Ta), 150W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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FQA12P20MOSFET P-CH 200V 12.6A TO3P onsemi |
0 | - |
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![]() 规格书 |
QFET® | TO-3P-3, SC-65-3 | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 200 V | 12.6A (Tc) | 10V | 470mOhm @ 6.3A, 10V | 5V @ 250µA | 40 nC @ 10 V | ±30V | 1200 pF @ 25 V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-3P |
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FQP5N80MOSFET N-CH 800V 4.8A TO220-3 onsemi |
0 | - |
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![]() 规格书 |
QFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 800 V | 4.8A (Tc) | 10V | 2.6Ohm @ 2.4A, 10V | 5V @ 250µA | 33 nC @ 10 V | ±30V | 1250 pF @ 25 V | - | 140W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-3 |
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FQPF44N10MOSFET N-CH 100V 27A TO220F onsemi |
0 | - |
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![]() 规格书 |
QFET® | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 27A (Tc) | 10V | 39mOhm @ 13.5A, 10V | 4V @ 250µA | 62 nC @ 10 V | ±25V | 1800 pF @ 25 V | - | 55W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220F-3 |
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FQPF6N60MOSFET N-CH 600V 3.6A TO220F onsemi |
0 | - |
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![]() 规格书 |
QFET® | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 3.6A (Tc) | 10V | 1.5Ohm @ 1.8A, 10V | 5V @ 250µA | 25 nC @ 10 V | ±30V | 1000 pF @ 25 V | - | 44W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F-3 |
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FQP12P20MOSFET P-CH 200V 11.5A TO220-3 onsemi |
0 | - |
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![]() 规格书 |
QFET® | TO-220-3 | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 200 V | 11.5A (Tc) | 10V | 470mOhm @ 5.75A, 10V | 5V @ 250µA | 40 nC @ 10 V | ±30V | 1200 pF @ 25 V | - | 120W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-3 |
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FQI10N60CTUMOSFET N-CH 600V 9.5A I2PAK onsemi |
0 | - |
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![]() 规格书 |
QFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 9.5A (Tc) | 10V | 730mOhm @ 4.75A, 10V | 4V @ 250µA | 57 nC @ 10 V | ±30V | 2040 pF @ 25 V | - | 3.13W (Ta), 156W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-262 (I2PAK) |
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NDB6030PLMOSFET P-CH 30V 30A D2PAK onsemi |
0 | - |
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![]() 规格书 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 30A (Tc) | 4.5V, 10V | 25mOhm @ 19A, 10V | 2V @ 250µA | 36 nC @ 5 V | ±16V | 1570 pF @ 15 V | - | 75W (Tc) | -65°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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FQI13N50CTUMOSFET N-CH 500V 13A I2PAK onsemi |
0 | - |
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![]() 规格书 |
QFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 13A (Tc) | 10V | 480mOhm @ 6.5A, 10V | 4V @ 250µA | 56 nC @ 10 V | ±30V | 2055 pF @ 25 V | - | 195W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-262 (I2PAK) |