上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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FQA35N40MOSFET N-CH 400V 35A TO3P onsemi |
0 | - |
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规格书 |
QFET® | TO-3P-3, SC-65-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 400 V | 35A (Tc) | 10V | 105mOhm @ 17.5A, 10V | 5V @ 250µA | 140 nC @ 10 V | ±30V | 5600 pF @ 25 V | - | 310W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-3P |
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NTMFS6B05NT3GMOSFET N-CH 100V 16A/104A 5DFN onsemi |
0 | - |
|
规格书 |
- | 8-PowerTDFN, 5 Leads | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 16A (Ta), 104A (Tc) | 6V, 10V | 8mOhm @ 20A, 10V | 4V @ 250µA | 44 nC @ 10 V | ±20V | 3100 pF @ 50 V | - | 3.3W (Ta), 138W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 5-DFN (5x6) (8-SOFL) |
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NVMFS6H801NWFT3GTRENCH 8 80V NFET onsemi |
0 | - |
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规格书 |
- | 8-PowerTDFN, 5 Leads | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80 V | 23A (Ta), 157A (Tc) | 10V | 2.8mOhm @ 50A, 10V | 4V @ 250µA | 64 nC @ 10 V | ±20V | 4120 pF @ 40 V | - | 3.8W (Ta), 166W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount, Wettable Flank | 5-DFNW (4.9x5.9) (8-SOFL-WF) |
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NDP7060MOSFET N-CH 60V 75A TO220-3 onsemi |
0 | - |
|
规格书 |
- | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 75A (Tc) | 10V | 13mOhm @ 40A, 10V | 4V @ 250µA | 115 nC @ 10 V | ±20V | 3600 pF @ 25 V | - | 150W (Tc) | -65°C ~ 175°C (TJ) | - | - | Through Hole | TO-220-3 |
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FDB5690MOSFET N-CH 60V 32A TO263AB onsemi |
0 | - |
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规格书 |
PowerTrench® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 32A (Tc) | 6V, 10V | 27mOhm @ 16A, 10V | 4V @ 250µA | 33 nC @ 10 V | ±20V | 1120 pF @ 25 V | - | 58W (Tc) | -65°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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FCA16N60MOSFET N-CH 600V 16A TO3PN onsemi |
0 | - |
|
规格书 |
SuperFET™ | TO-3P-3, SC-65-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 16A (Tc) | 10V | 260mOhm @ 8A, 10V | 5V @ 250µA | 70 nC @ 10 V | ±30V | 2250 pF @ 25 V | - | 167W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-3PN |
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FCPF16N60NTMOSFET N-CH 600V 16A TO220F onsemi |
0 | - |
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规格书 |
SupreMOS™ | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 16A (Tc) | 10V | 199mOhm @ 8A, 10V | 4V @ 250µA | 52.3 nC @ 10 V | ±30V | 2170 pF @ 100 V | - | 35.7W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F-3 |
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NTB52N10T4GMOSFET N-CH 100V 52A D2PAK onsemi |
0 | - |
|
规格书 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 52A (Tc) | 10V | 30mOhm @ 26A, 10V | 4V @ 250µA | 135 nC @ 10 V | ±20V | 3150 pF @ 25 V | - | 2W (Ta), 178W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | D2PAK |
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FQA36P15MOSFET P-CH 150V 36A TO3PN onsemi |
0 | - |
|
规格书 |
QFET® | TO-3P-3, SC-65-3 | Tube | Active | P-Channel | MOSFET (Metal Oxide) | 150 V | 36A (Tc) | 10V | 90mOhm @ 18A, 10V | 4V @ 250µA | 105 nC @ 10 V | ±30V | 3320 pF @ 25 V | - | 294W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-3PN |
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FQP3P50MOSFET P-CH 500V 2.7A TO220-3 onsemi |
0 | - |
|
规格书 |
QFET® | TO-220-3 | Tube | Active | P-Channel | MOSFET (Metal Oxide) | 500 V | 2.7A (Tc) | 10V | 4.9Ohm @ 1.35A, 10V | 5V @ 250µA | 23 nC @ 10 V | ±30V | 660 pF @ 25 V | - | 85W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-3 |
