上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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FDD2612MOSFET N-CH 200V 4.9A TO252 onsemi |
0 | - |
|
规格书 |
PowerTrench® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 4.9A (Ta) | 10V | 720mOhm @ 1.5A, 10V | 4.5V @ 250µA | 11 nC @ 10 V | ±20V | 234 pF @ 100 V | - | 42W (Ta) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA |
|
FQAF33N10LMOSFET N-CH 100V 25.8A TO3PF onsemi |
0 | - |
|
规格书 |
QFET® | TO-3P-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 25.8A (Tc) | 5V, 10V | 52mOhm @ 12.9A, 10V | 2V @ 250µA | 40 nC @ 5 V | ±20V | 1630 pF @ 25 V | - | 83W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-3PF |
|
MTD5P06VT4GMOSFET P-CH 60V 5A DPAK onsemi |
0 | - |
|
规格书 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 60 V | 5A (Tc) | 10V | 450mOhm @ 2.5A, 10V | 4V @ 250µA | 20 nC @ 10 V | ±15V | 510 pF @ 25 V | - | 2.1W (Ta), 40W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | DPAK |
|
FQAF33N10MOSFET N-CH 100V 25.8A TO3PF onsemi |
0 | - |
|
规格书 |
QFET® | TO-3P-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 25.8A (Tc) | 10V | 52mOhm @ 12.9A, 10V | 4V @ 250µA | 51 nC @ 10 V | ±25V | 1500 pF @ 25 V | - | 83W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-3PF |
|
FQPF9N50YDTUMOSFET N-CH 500V 5.3A TO220F-3 onsemi |
0 | - |
|
规格书 |
QFET® | TO-220-3 Full Pack, Formed Leads | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 5.3A (Tc) | 10V | 730mOhm @ 2.65A, 10V | 5V @ 250µA | 36 nC @ 10 V | ±30V | 1450 pF @ 25 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F-3 (Y-Forming) |
|
HUF76432P3MOSFET N-CH 60V 59A TO220-3 onsemi |
0 | - |
|
规格书 |
UltraFET™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 59A (Tc) | 4.5V, 10V | 17mOhm @ 59A, 10V | 3V @ 250µA | 53 nC @ 10 V | ±16V | 1765 pF @ 25 V | - | 130W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220-3 |
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FQP19N20LMOSFET N-CH 200V 21A TO220-3 onsemi |
0 | - |
|
规格书 |
QFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 21A (Tc) | 5V, 10V | 140mOhm @ 10.5A, 10V | 2V @ 250µA | 35 nC @ 5 V | ±20V | 2200 pF @ 25 V | - | 140W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-3 |
|
IRFU120_R4941MOSFET N-CH 100V 8.4A I-PAK onsemi |
0 | - |
|
规格书 |
- | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 8.4A (Tc) | - | 270mOhm @ 5.9A, 10V | 4V @ 250µA | 15 nC @ 10 V | - | 350 pF @ 25 V | - | - | - | - | - | Through Hole | IPAK |
|
FDB6690SMOSFET N-CH 30V 42A TO263AB onsemi |
0 | - |
|
规格书 |
PowerTrench®, SyncFET™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 42A (Ta) | 4.5V, 10V | 15.5mOhm @ 21A, 10V | 3V @ 1mA | 15 nC @ 5 V | ±20V | 1238 pF @ 15 V | - | 48W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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FQAF12P20MOSFET P-CH 200V 8.6A TO3PF onsemi |
0 | - |
|
规格书 |
QFET® | TO-3P-3 Full Pack | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 200 V | 8.6A (Tc) | 10V | 470mOhm @ 4.3A, 10V | 5V @ 250µA | 40 nC @ 10 V | ±30V | 1200 pF @ 25 V | - | 70W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-3PF |
