上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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FQD3N60TFMOSFET N-CH 600V 2.4A DPAK onsemi |
0 | - |
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规格书 |
QFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 2.4A (Tc) | 10V | 3.6Ohm @ 1.2A, 10V | 5V @ 250µA | 13 nC @ 10 V | ±30V | 450 pF @ 25 V | - | 2.5W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252AA |
|
FQD12N20TFMOSFET N-CH 200V 9A DPAK onsemi |
0 | - |
|
- |
QFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 9A (Tc) | 10V | 280mOhm @ 4.5A, 10V | 5V @ 250µA | 23 nC @ 10 V | ±30V | 910 pF @ 25 V | - | 2.5W (Ta), 55W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252AA |
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HUFA75329D3SMOSFET N-CH 55V 20A TO252AA onsemi |
0 | - |
|
规格书 |
UltraFET™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 20A (Tc) | 10V | 26mOhm @ 20A, 10V | 4V @ 250µA | 65 nC @ 20 V | ±20V | 1060 pF @ 25 V | - | 128W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA |
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HUFA76629D3SMOSFET N-CH 100V 20A TO252AA onsemi |
0 | - |
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规格书 |
UltraFET™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 20A (Tc) | 4.5V, 10V | 52mOhm @ 20A, 10V | 3V @ 250µA | 46 nC @ 10 V | ±16V | 1285 pF @ 25 V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA |
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FQB6N50TMMOSFET N-CH 500V 5.5A D2PAK onsemi |
0 | - |
|
规格书 |
QFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 5.5A (Tc) | 10V | 1.3Ohm @ 2.8A, 10V | 5V @ 250µA | 22 nC @ 10 V | ±30V | 790 pF @ 25 V | - | 3.13W (Ta), 130W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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FQD2N80TM_WSMOSFET N-CH 800V 1.8A DPAK onsemi |
0 | - |
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- |
QFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 800 V | 1.8A (Tc) | 10V | 6.3Ohm @ 900mA, 10V | 5V @ 250µA | 15 nC @ 10 V | ±30V | 550 pF @ 25 V | - | 2.5W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252AA |
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RFD8P05MOSFET P-CH 50V 8A I-PAK onsemi |
0 | - |
|
规格书 |
- | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 50 V | 8A (Tc) | 10V | 300mOhm @ 8A, 10V | 4V @ 250µA | 80 nC @ 20 V | ±20V | - | - | 48W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK |
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RFD8P05SMMOSFET P-CH 50V 8A TO252AA onsemi |
0 | - |
|
规格书 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 50 V | 8A (Tc) | - | 300mOhm @ 8A, 10V | 4V @ 250µA | 80 nC @ 20 V | - | - | - | - | - | - | - | Surface Mount | TO-252AA |
|
FDG315NMOSFET N-CH 30V 2A SC88 onsemi |
0 | - |
|
规格书 |
PowerTrench® | 6-TSSOP, SC-88, SOT-363 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 2A (Ta) | 4.5V, 10V | 120mOhm @ 2A, 10V | 3V @ 250µA | 4 nC @ 5 V | ±20V | 220 pF @ 15 V | - | 750mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SC-88 (SC-70-6) |
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MLD1N06CLT4IC PWR DRIVER N-CHANNEL 1:1 DPAK onsemi |
0 | - |
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规格书 |
SMARTDISCRETES™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 65 V | 1A | 4V, 5V | 750mOhm @ 1A, 5V | - | - | - | - | - | 40W | -50°C ~ 150°C (TJ) | - | - | Surface Mount | DPAK |
