上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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FQPF17N08LMOSFET N-CH 80V 11.2A TO220F onsemi |
0 | - |
|
规格书 |
QFET® | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80 V | 11.2A (Tc) | 5V, 10V | 100mOhm @ 5.6A, 10V | 2V @ 250µA | 11.5 nC @ 5 V | ±20V | 520 pF @ 25 V | - | 30W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220F-3 |
|
FQP14N15MOSFET N-CH 150V 14.4A TO220-3 onsemi |
0 | - |
|
规格书 |
QFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 14.4A (Tc) | 10V | 210mOhm @ 7.2A, 10V | 4V @ 250µA | 23 nC @ 10 V | ±25V | 715 pF @ 25 V | - | 104W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220-3 |
|
FQD2N60CTM-WSMOSFET N-CH 600V 1.9A DPAK onsemi |
0 | - |
|
规格书 |
QFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 1.9A (Tc) | 10V | 4.7Ohm @ 950mA, 10V | 4V @ 250µA | 12 nC @ 10 V | ±30V | 235 pF @ 25 V | - | 2.5W (Ta), 44W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252AA |
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FQD4N20LTFMOSFET N-CH 200V 3.2A DPAK onsemi |
0 | - |
|
规格书 |
QFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 3.2A (Tc) | 5V, 10V | 1.35Ohm @ 1.6A, 10V | 2V @ 250µA | 5.2 nC @ 5 V | ±20V | 310 pF @ 25 V | - | 2.5W (Ta), 30W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252AA |
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FQD5P20TFMOSFET P-CH 200V 3.7A DPAK onsemi |
0 | - |
|
- |
QFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 200 V | 3.7A (Tc) | 10V | 1.4Ohm @ 1.85A, 10V | 5V @ 250µA | 13 nC @ 10 V | ±30V | 430 pF @ 25 V | - | 2.5W (Ta), 45W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252AA |
|
FQD3N50CTFMOSFET N-CH 500V 2.5A DPAK onsemi |
0 | - |
|
规格书 |
QFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 2.5A (Tc) | 10V | 2.5Ohm @ 1.25A, 10V | 4V @ 250µA | 13 nC @ 10 V | ±30V | 365 pF @ 25 V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252AA |
|
FQB13N06TMMOSFET N-CH 60V 13A D2PAK onsemi |
0 | - |
|
规格书 |
QFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 13A (Tc) | 10V | 135mOhm @ 6.5A, 10V | 4V @ 250µA | 7.5 nC @ 10 V | ±25V | 310 pF @ 25 V | - | 3.75W (Ta), 45W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
FQD4P25TFMOSFET P-CH 250V 3.1A DPAK onsemi |
0 | - |
|
规格书 |
QFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 250 V | 3.1A (Tc) | 10V | 2.1Ohm @ 1.55A, 10V | 5V @ 250µA | 14 nC @ 10 V | ±30V | 420 pF @ 25 V | - | 2.5W (Ta), 45W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252AA |
|
NTMS4101PR2MOSFET P-CH 20V 6.9A 8SOIC onsemi |
0 | - |
|
规格书 |
- | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 6.9A (Ta) | 2.5V, 4.5V | 19mOhm @ 6.9A, 4.5V | 450mV @ 250µA (Min) | 32 nC @ 4.5 V | ±8V | 3200 pF @ 10 V | - | 1.38W (Tj) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
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FDFS2P103AMOSFET P-CH 30V 5.3A 8SOIC onsemi |
0 | - |
|
规格书 |
PowerTrench® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 5.3A (Ta) | 4.5V, 10V | 59mOhm @ 5.3A, 10V | 3V @ 250µA | 8 nC @ 5 V | ±25V | 535 pF @ 15 V | Schottky Diode (Isolated) | 900mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
