上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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NTHL015N065SC1SILICON CARBIDE (SIC) MOSFET - 1 onsemi |
605 | - |
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规格书 |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 163A (Tc) | 15V, 18V | 18mOhm @ 75A, 18V | 4.3V @ 25mA | 283 nC @ 18 V | +22V, -8V | 4790 pF @ 325 V | - | 643W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-3 |
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NVBG022N120M3SSIC MOS D2PAK-7L 22MOHM 1200V onsemi |
250 | - |
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规格书 |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 58A (Tc) | 18V | 30mOhm @ 40A, 18V | 4.4V @ 20mA | 148 nC @ 18 V | - | 3200 pF @ 800 V | - | 234W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | D2PAK-7 |
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NTBG020N090SC1SICFET N-CH 900V 9.8A/112A D2PAK onsemi |
1,024 | - |
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规格书 |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 900 V | 9.8A (Ta), 112A (Tc) | 15V | 28mOhm @ 60A, 15V | 4.3V @ 20mA | 200 nC @ 15 V | +19V, -10V | 4415 pF @ 450 V | - | 3.7W (Ta), 477W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK-7 |
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NVMFS5C682NLWFAFT3GMOSFET N-CH 60V 8.8A/25A 5DFN onsemi |
5,000 | - |
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规格书 |
- | 8-PowerTDFN, 5 Leads | Tape & Reel (TR) | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 60 V | 8.8A (Ta), 25A (Tc) | 4.5V, 10V | 21mOhm @ 10A, 10V | 2V @ 16µA | 5 nC @ 10 V | ±20V | 410 pF @ 25 V | - | 3.5W (Ta), 28W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | 5-DFN (5x6) (8-SOFL) |
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NTLJF4156NTAGMOSFET N-CH 30V 2.5A 6WDFN onsemi |
2,935 | - |
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规格书 |
- | 6-WDFN Exposed Pad | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 2.5A (Tj) | 1.5V, 4.5V | 70mOhm @ 2A, 4.5V | 1V @ 250µA | 6.5 nC @ 4.5 V | ±8V | 427 pF @ 15 V | Schottky Diode (Isolated) | 710mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 6-WDFN (2x2) |
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NTTFS5C680NLTAGMOSFET N-CH 60V 7.82A/20A 8WDFN onsemi |
1,330 | - |
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规格书 |
- | 8-PowerWDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 7.82A (Ta), 20A (Tc) | 4.5V, 10V | 26.5mOhm @ 10A, 10V | 2.2V @ 13µA | 6 nC @ 10 V | ±20V | 327 pF @ 25 V | - | 3W (Ta), 20W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | 8-WDFN (3.3x3.3) |
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NTLUS030N03CTAGMOSFET N-CH 30V 4.5A 6UDFN onsemi |
1,888 | - |
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规格书 |
µCool™ | 6-PowerUFDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 4.5A (Ta) | 4.5V, 10V | 18mOhm @ 6A, 10V | 2.2V @ 250µA | 8 nC @ 10 V | ±20V | 400 pF @ 15 V | - | 640mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 6-UDFN (1.6x1.6) |
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NVTFS6H888NTAGMOSFET N-CH 80V 4.7A/12A 8WDFN onsemi |
4,310 | - |
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规格书 |
- | 8-PowerWDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 4.7A (Ta), 12A (Tc) | 10V | 55mOhm @ 5A, 10V | 4V @ 15µA | 4.7 nC @ 10 V | ±20V | 220 pF @ 40 V | - | 2.9W (Ta), 18W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | 8-WDFN (3.3x3.3) |
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NTMFS4C910NAT3GTRENCH 6 30V NCH onsemi |
15,000 | - |
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- |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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NTMFS4C910NBT1GTRENCH 6 30V NCH onsemi |
10,500 | - |
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- |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
