制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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HUF75332P3MOSFET N-CH 55V 60A TO220-3 onsemi |
388 | - |
|
![]() 规格书 |
UltraFET™ | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 60A (Tc) | 10V | 19mOhm @ 60A, 10V | 4V @ 250µA | 85 nC @ 20 V | ±20V | 1300 pF @ 25 V | - | 145W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220-3 |
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NVMFS5C645NT1GMOSFET N-CH 60V 92A 5DFN onsemi |
0 | - |
|
![]() 规格书 |
- | 8-PowerTDFN, 5 Leads | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 20A (Ta), 92A (Tc) | 10V | 4.6mOhm @ 50A, 10V | 4V @ 250µA | 20.4 nC @ 10 V | ±20V | 1500 pF @ 25 V | - | 3.7W (Ta), 79W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | 5-DFN (5x6) (8-SOFL) |
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FDI030N06MOSFET N-CH 60V 120A I2PAK onsemi |
0 | - |
|
![]() 规格书 |
PowerTrench® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 120A (Tc) | 10V | 3.2mOhm @ 75A, 10V | 4.5V @ 250µA | 151 nC @ 10 V | ±20V | 9815 pF @ 25 V | - | 231W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 (I2PAK) |
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FDS4470MOSFET N-CH 40V 12.5A 8SOIC onsemi |
5,950 | - |
|
![]() 规格书 |
PowerTrench® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 40 V | 12.5A (Ta) | 10V | 9mOhm @ 12.5A, 10V | 5V @ 250µA | 63 nC @ 10 V | +30V, -20V | 2659 pF @ 20 V | - | 2.5W (Ta) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | 8-SOIC |
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2SK4085LS-CB11MOSFET N-CH onsemi |
2,200 | - |
|
![]() 规格书 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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FDMS8026SMOSFET N-CH 30V 19A/22A 8PQFN onsemi |
1,940 | - |
|
![]() 规格书 |
PowerTrench®, SyncFET™ | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 19A (Ta), 22A (Tc) | 4.5V, 10V | 4.3mOhm @ 19A, 10V | 3V @ 1mA | 37 nC @ 10 V | ±20V | 2280 pF @ 15 V | - | 2.5W (Ta), 41W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PQFN (5x6) |
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FCH104N60MOSFET N-CH 600V 37A TO247-3 onsemi |
0 | - |
|
![]() 规格书 |
SuperFET® II | TO-247-3 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 37A (Tc) | 10V | 104mOhm @ 18.5A, 10V | 3.5V @ 250µA | 82 nC @ 10 V | ±20V | 4165 pF @ 380 V | - | 357W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-3 |
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NTMYS020N08LHTWGT8 80V LL LFPAK onsemi |
0 | - |
|
![]() 规格书 |
- | SOT-1023, 4-LFPAK | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 8.7A (Ta), 30A (Tc) | 4.5V, 10V | 19.5mOhm @ 5A, 10V | 2V @ 30µA | 12 nC @ 10 V | ±20V | 623 pF @ 40 V | - | 3.5W (Ta), 42W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | LFPAK4 (5x6) |
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FDS3512MOSFET N-CH 80V 4A 8SOIC onsemi |
3,894 | - |
|
![]() 规格书 |
PowerTrench® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80 V | 4A (Ta) | 6V, 10V | 70mOhm @ 4A, 10V | 4V @ 250µA | 18 nC @ 10 V | ±20V | 634 pF @ 40 V | - | 2.5W (Ta) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | 8-SOIC |
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FQPF8N80CYDTUMOSFET N-CH 800V 8A TO220F-3 onsemi |
102 | - |
|
![]() 规格书 |
QFET® | TO-220-3 Full Pack, Formed Leads | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 800 V | 8A (Tc) | 10V | 1.55Ohm @ 4A, 10V | 5V @ 250µA | 45 nC @ 10 V | ±30V | 2050 pF @ 25 V | - | 59W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F-3 (Y-Forming) |