上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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FQI7N80TUMOSFET N-CH 800V 6.6A I2PAK onsemi |
0 | - |
|
规格书 |
QFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 800 V | 6.6A (Tc) | 10V | 1.5Ohm @ 3.3A, 10V | 5V @ 250µA | 52 nC @ 10 V | ±30V | 1850 pF @ 25 V | - | 3.13W (Ta), 167W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-262 (I2PAK) |
|
NDBA170N06AT4HMOSFET N-CH 60V 170A D2PAK onsemi |
0 | - |
|
- |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 170A (Ta) | 10V | 3.3mOhm @ 50A, 10V | 2.6V @ 1mA | 280 nC @ 10 V | ±20V | 15800 pF @ 20 V | - | 90W (Tc) | 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
NVB60N06T4GMOSFET N-CH 60V 60A D2PAK onsemi |
0 | - |
|
- |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 60A (Ta) | - | 14mOhm @ 30A, 10V | 4V @ 250µA | 81 nC @ 10 V | - | 3220 pF @ 25 V | - | 2.4W (Ta), 150W (Tj) | - | Automotive | AEC-Q101 | Surface Mount | D2PAK |
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BFL4004-1EMOSFET N-CH 800V 4.3A TO220F-3FS onsemi |
0 | - |
|
规格书 |
- | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 800 V | 4.3A (Tc) | 10V | 2.5Ohm @ 3.25A, 10V | - | 36 nC @ 10 V | ±30V | 710 pF @ 30 V | - | 2W (Ta), 36W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F-3FS |
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2SK4087LS-1EMOSFET N-CH 600V 9.2A TO220F-3FS onsemi |
0 | - |
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- |
- | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 9.2A (Tc) | 10V | 610mOhm @ 7A, 10V | - | 46 nC @ 10 V | ±30V | 1200 pF @ 30 V | - | 2W (Ta), 40W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220F-3FS |
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NTMFS4962NFT1GMOSFET N-CH 30V SO8FL onsemi |
6,000 | - |
|
- |
* | - | Bulk | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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FDA16N50LDTUMOSFET N-CH 500V 16.5A TO3PN onsemi |
0 | - |
|
规格书 |
- | TO-3P-3, SC-65-3, Formed Leads | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 16.5A (Tc) | 10V | 380mOhm @ 8.3A, 10V | 5V @ 250µA | 45 nC @ 10 V | ±30V | 1945 pF @ 25 V | - | 205W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-3PN (L-Forming) |
|
FQP12N60CMOSFET N-CH 600V 12A TO220-3 onsemi |
0 | - |
|
规格书 |
QFET® | TO-220-3 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 12A (Tc) | 10V | 650mOhm @ 6A, 10V | 4V @ 250µA | 63 nC @ 10 V | ±30V | 2290 pF @ 25 V | - | 225W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-3 |
|
FQA27N25MOSFET N-CH 250V 27A TO3PN onsemi |
0 | - |
|
规格书 |
QFET® | TO-3P-3, SC-65-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 250 V | 27A (Tc) | 10V | 110mOhm @ 13.5A, 10V | 5V @ 250µA | 65 nC @ 10 V | ±30V | 2450 pF @ 25 V | - | 210W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-3PN |
|
FDS5690MOSFET N-CH 60V 7A 8SOIC onsemi |
51,321 | - |
|
规格书 |
PowerTrench® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 7A (Ta) | 6V, 10V | 28mOhm @ 7A, 10V | 4V @ 250µA | 32 nC @ 10 V | ±20V | 1107 pF @ 30 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
