上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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FQT7N10TFMOSFET N-CH 100V 1.7A SOT223-4 onsemi |
9,660 | - |
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规格书 |
QFET® | TO-261-4, TO-261AA | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 1.7A (Tc) | 10V | 350mOhm @ 850mA, 10V | 4V @ 250µA | 7.5 nC @ 10 V | ±25V | 250 pF @ 25 V | - | 2W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-223-4 |
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FQPF19N20MOSFET N-CH 200V 11.8A TO220F onsemi |
0 | - |
|
规格书 |
QFET® | TO-220-3 Full Pack | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 11.8A (Tc) | 10V | 150mOhm @ 5.9A, 10V | 5V @ 250µA | 40 nC @ 10 V | ±30V | 1600 pF @ 25 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F-3 |
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FCPF1300N80ZYDPOWER FIELD-EFFECT TRANSISTOR, N onsemi |
497 | - |
|
规格书 |
SuperFET® II | TO-220-3 Full Pack, Formed Leads | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 4A (Tc) | 10V | 1.3Ohm @ 2A, 10V | 4.5V @ 400µA | 21 nC @ 10 V | ±20V | 880 pF @ 100 V | - | 24W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F-3 (Y-Forming) |
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FDFMA2P029Z-F106MOSFET P-CH 20V 3.1A 6MICROFET onsemi |
0 | - |
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规格书 |
PowerTrench® | 6-VDFN Exposed Pad | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 3.1A (Ta) | 2.5V, 4.5V | 95mOhm @ 3.1A, 4.5V | 1.5V @ 250µA | 10 nC @ 4.5 V | ±12V | 720 pF @ 10 V | Schottky Diode (Isolated) | 1.4W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 6-MicroFET (2x2) |
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SPP1421DMR2GMOSFET N-CH SMD onsemi |
0 | - |
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- |
* | - | Tape & Reel (TR) | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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2SJ659-EPCH 4V DRIVE SERIES onsemi |
8,193 | - |
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- |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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FDFMA2N028ZMOSFET N-CH 20V 3.7A 6MICROFET onsemi |
464 | - |
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规格书 |
PowerTrench® | 6-VDFN Exposed Pad | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 3.7A (Ta) | 2.5V, 4.5V | 68mOhm @ 3.7A, 4.5V | 1.5V @ 250µA | 6 nC @ 4.5 V | ±12V | 455 pF @ 10 V | Schottky Diode (Isolated) | 1.4W (Tj) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 6-MicroFET (2x2) |
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FDMC7696-L701PT7 N MLP3.3X3.3 COM onsemi |
3,000 | - |
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规格书 |
PowerTrench® | 8-PowerWDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 12A (Ta), 20A (Tc) | 4.5V, 10V | 11.5mOhm @ 12A, 10V | 3V @ 250µA | 22 nC @ 10 V | ±20V | 1430 pF @ 15 V | - | 2.4W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-MLP (3.3x3.3) |
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FDMS0310SMOSFET N-CH 30V 19A/42A 8PQFN onsemi |
0 | - |
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规格书 |
PowerTrench®, SyncFET™ | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 19A (Ta), 42A (Tc) | 4.5V, 10V | 4mOhm @ 18A, 10V | 3V @ 1mA | 46 nC @ 10 V | ±20V | 2820 pF @ 15 V | - | 2.5W (Ta), 46W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PQFN (5x6) |
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NTMFS5C677NLT1GMOSFET N-CH 60V 11A/36A 5DFN onsemi |
0 | - |
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规格书 |
- | 8-PowerTDFN, 5 Leads | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 11A (Ta), 36A (Tc) | 4.5V, 10V | 15mOhm @ 10A, 10V | 2V @ 25µA | 9.7 nC @ 10 V | ±20V | 620 pF @ 25 V | - | 3.5W (Ta), 37W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | 5-DFN (5x6) (8-SOFL) |
