上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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NVD5802NT4GMOSFET N-CH 40V 16.4A/101A DPAK onsemi |
0 | - |
|
规格书 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 16.4A (Ta), 101A (Tc) | 5V, 10V | 4.4mOhm @ 50A, 10V | 3.5V @ 250µA | 100 nC @ 10 V | ±20V | 5300 pF @ 12 V | - | 2.5W (Ta), 93.75W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | DPAK |
|
FQB33N10LTMMOSFET N-CH 100V 33A D2PAK onsemi |
6,400 | - |
|
规格书 |
QFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 33A (Tc) | 5V, 10V | 52mOhm @ 16.5A, 10V | 2V @ 250µA | 40 nC @ 5 V | ±20V | 1630 pF @ 25 V | - | 3.75W (Ta), 127W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
FCPF250N65S3R0LMOSFET N-CH 650V 12A TO220F-3 onsemi |
0 | - |
|
规格书 |
SuperFET® III | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 12A (Tc) | 10V | 250mOhm @ 6A, 10V | 4.5V @ 1.2mA | 24 nC @ 10 V | ±30V | 1010 pF @ 400 V | - | 31W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F-3 |
|
FQP2N90MOSFET N-CH 900V 2.2A TO220-3 onsemi |
0 | - |
|
规格书 |
QFET® | TO-220-3 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 900 V | 2.2A (Tc) | 10V | 7.2Ohm @ 1.1A, 10V | 5V @ 250µA | 15 nC @ 10 V | ±30V | 500 pF @ 25 V | - | 85W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-3 |
|
2SK3816-DL-1EMOSFET N-CH 60V 40A TO263-2 onsemi |
0 | - |
|
规格书 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 40A (Ta) | 4V, 10V | 26mOhm @ 20A, 10V | - | 40 nC @ 10 V | ±20V | 1780 pF @ 20 V | - | 1.65W (Ta), 50W (Tc) | 150°C (TJ) | - | - | Surface Mount | TO-263-2 |
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NTMFS4923NET3GMOSFET N-CH 30V 12.7A/91A 5DFN onsemi |
0 | - |
|
规格书 |
- | 8-PowerTDFN, 5 Leads | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 12.7A (Ta), 91A (Tc) | 4.5V, 10V | 3.3mOhm @ 30A, 10V | 2V @ 250µA | 22 nC @ 4.5 V | ±20V | 4850 pF @ 15 V | - | 930mW (Ta), 48W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | 5-DFN (5x6) (8-SOFL) |
|
2SK2624LS-CD11N-CHANNEL SILICON MOSFET onsemi |
2,470 | - |
|
规格书 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
2SK2631-TL-E-ONMOSFET onsemi |
16,100 | - |
|
- |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
2SK2010-CTV-YA14NCH 10V DRIVE SERIES onsemi |
10,850 | - |
|
- |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
2SJ266-DL-EPCH 4V DRIVE SERIES onsemi |
6,000 | - |
|
规格书 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
