上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
NVD4809NT4GMOSFET N-CH 30V 9.6A/58A DPAK-3 onsemi |
0 | - |
|
规格书 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 9.6A (Ta), 58A (Tc) | 4.5V, 11.5V | 9mOhm @ 30A, 10V | 2.5V @ 250µA | 25 nC @ 11.5 V | ±20V | 1456 pF @ 12 V | - | 1.4W (Ta), 52W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | DPAK-3 |
|
FQD4N20TMPOWER FIELD-EFFECT TRANSISTOR, 3 onsemi |
9,174 | - |
|
规格书 |
QFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 3A (Tc) | 10V | 1.4Ohm @ 1.5A, 10V | 5V @ 250µA | 6.5 nC @ 10 V | ±30V | 220 pF @ 25 V | - | 2.5W (Ta), 30W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252AA |
|
FDV304P-CGB8MOSFET P-CHANNEL onsemi |
0 | - |
|
- |
- | - | Tape & Reel (TR) | Obsolete | - | - | - | 460mA (Tj) | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
NTMFS4839NHT1GMOSFET N-CH 30V 9.5A/64A 5DFN onsemi |
0 | - |
|
规格书 |
- | 8-PowerTDFN, 5 Leads | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 9.5A (Ta), 64A (Tc) | 4.5V, 11.5V | 5.5mOhm @ 30A, 10V | 2.5V @ 250µA | 43.5 nC @ 11.5 V | ±20V | 2354 pF @ 12 V | - | 870mW (Ta), 42.4W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 5-DFN (5x6) (8-SOFL) |
|
FDMA8884MOSFET N-CH 30V 6.5/8A 6MICROFET onsemi |
0 | - |
|
规格书 |
PowerTrench® | 6-WDFN Exposed Pad | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 6.5A (Ta), 8A (Tc) | 4.5V, 10V | 23mOhm @ 6.5A, 10V | 3V @ 250µA | 7.5 nC @ 10 V | ±20V | 450 pF @ 15 V | - | 1.9W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 6-MicroFET (2x2) |
|
NTTFS4928NTWGMOSFET N-CH 30V 7.3A/37A 8WDFN onsemi |
0 | - |
|
规格书 |
- | 8-PowerWDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 7.3A (Ta), 37A (Tc) | 4.5V, 10V | 9mOhm @ 20A, 10V | 2.2V @ 250µA | 8 nC @ 4.5 V | ±20V | 913 pF @ 15 V | - | 810mW (Ta), 20.8W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-WDFN (3.3x3.3) |
|
CPH3438-TL-ENCH 4V DRIVE SERIES onsemi |
312,000 | - |
|
规格书 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
NDD02N60Z-1GMOSFET N-CH 600V 2.2A IPAK onsemi |
0 | - |
|
规格书 |
- | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 2.2A (Tc) | 10V | 4.8Ohm @ 1A, 10V | 4.5V @ 50µA | 10.1 nC @ 10 V | ±30V | 274 pF @ 25 V | - | 57W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | IPAK |
|
|
NTD85N02R-1GMOSFET N-CH 24V 12A/85A IPAK onsemi |
0 | - |
|
规格书 |
- | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 24 V | 12A (Ta), 85A (Tc) | 4.5V, 10V | 5.2mOhm @ 20A, 10V | 2V @ 250µA | 17.7 nC @ 5 V | ±20V | 2050 pF @ 20 V | - | 1.25W (Ta), 78.1W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | IPAK |
|
NTD4863N-35GMOSFET N-CH 25V 9.2A/49A IPAK onsemi |
0 | - |
|
规格书 |
- | TO-251-3 Stub Leads, IPAK | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 9.2A (Ta), 49A (Tc) | 4.5V, 10V | 9.3mOhm @ 30A, 10V | 2.5V @ 250µA | 13.5 nC @ 4.5 V | ±20V | 990 pF @ 12 V | - | 1.27W (Ta), 36.6W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK |
