上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
5HN02C-TB-EN-CHANNEL SMALL SIGNAL MOSFET onsemi |
39,000 | - |
|
- |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
MCH3411-TL-ENCH 2.5V DRIVE SERIES onsemi |
36,000 | - |
|
- |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
MCH5805-TL-EPCH+SBD 4V DRIVE SERIES onsemi |
36,000 | - |
|
- |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
VN2222LLRLSMALL SIGNAL N-CHANNEL MOSFET onsemi |
30,204 | - |
|
规格书 |
- | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 150mA | 10V | 7.5Ohm @ 500mA, 10V | 2.5V @ 1mA | - | ±20V | 60 pF @ 25 V | - | 400mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-92 (TO-226) |
|
|
NTHS5443T1HPFET CHPFT 20V 4.9A 65MOH onsemi |
27,000 | - |
|
- |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
NTHD4P02FT1MOSFET/SCHOTTKY P-CH 20V CHIPFET onsemi |
20,955 | - |
|
- |
- | - | Bulk | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
MCH5819-TL-ENCH+SBD 4V DRIVE SERIES onsemi |
18,000 | - |
|
- |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
NTD23N03RGMOSFET N-CH 25V 3.8A/17.1A DPAK onsemi |
0 | - |
|
规格书 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 3.8A (Ta), 17.1A (Tc) | 4V, 5V | 45mOhm @ 6A, 10V | 2V @ 250µA | 3.76 nC @ 4.5 V | ±20V | 225 pF @ 20 V | - | 1.14W (Ta), 22.3W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | DPAK |
|
MCH5837-TL-EMOSFET N-CH 20V 2A 5MCPH onsemi |
15,000 | - |
|
- |
- | 6-SMD (5 Leads), Flat Leads | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 2A (Ta) | - | 145mOhm @ 1A, 4V | - | 1.8 nC @ 4 V | - | 115 pF @ 10 V | Schottky Diode (Isolated) | 800mW (Ta) | 150°C (TJ) | - | - | Surface Mount | 5-MCPH |
|
MCH3312-EBM-TL-EPCH 4V DRIVE SERIES onsemi |
15,000 | - |
|
- |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
