上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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AOW7S60MOSFET N-CH 600V 7A TO262 Alpha & Omega Semiconductor Inc. |
0 | - |
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规格书 |
aMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 7A (Tc) | 10V | 600mOhm @ 3.5A, 10V | 3.9V @ 250µA | 8.2 nC @ 10 V | ±30V | 372 pF @ 100 V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-262 |
|
AOWF11N70MOSFET N-CH 700V 11A TO262F Alpha & Omega Semiconductor Inc. |
0 | - |
|
规格书 |
- | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 700 V | 11A (Tc) | 10V | 870mOhm @ 5.5A, 10V | 4.5V @ 250µA | 45 nC @ 10 V | ±30V | 2150 pF @ 25 V | - | 28W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-262F |
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AOWF11S60MOSFET N-CH 600V 11A TO262F Alpha & Omega Semiconductor Inc. |
0 | - |
|
规格书 |
aMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 11A (Tc) | 10V | 399mOhm @ 3.8A, 10V | 4.1V @ 250µA | 11 nC @ 10 V | ±30V | 545 pF @ 100 V | - | 28W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-262F |
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AOWF11S65MOSFET N-CH 650V 11A TO262F Alpha & Omega Semiconductor Inc. |
0 | - |
|
规格书 |
aMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 11A (Tc) | 10V | 399mOhm @ 5.5A, 10V | 4V @ 250µA | 13.2 nC @ 10 V | ±30V | 646 pF @ 100 V | - | 28W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-262F |
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AOWF12N50MOSFET N-CH 500V 12A TO262F Alpha & Omega Semiconductor Inc. |
0 | - |
|
规格书 |
- | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 12A (Tc) | 10V | 520mOhm @ 6A, 10V | 4.5V @ 250µA | 37 nC @ 10 V | ±30V | 1633 pF @ 25 V | - | 28W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-262F |
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AOWF12N60MOSFET N-CH 600V 12A TO262F Alpha & Omega Semiconductor Inc. |
0 | - |
|
规格书 |
- | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 12A (Tc) | 10V | 550mOhm @ 6A, 10V | 4.5V @ 250µA | 50 nC @ 10 V | ±30V | 2100 pF @ 25 V | - | 28W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-262F |
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AOWF12N65MOSFET N-CH 650V 12A TO262F Alpha & Omega Semiconductor Inc. |
0 | - |
|
规格书 |
- | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 12A (Tc) | 10V | 720mOhm @ 6A, 10V | 4.5V @ 250µA | 48 nC @ 10 V | ±30V | 2150 pF @ 25 V | - | 28W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-262F |
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AOWF14N50MOSFET N-CH 500V 14A TO262F Alpha & Omega Semiconductor Inc. |
0 | - |
|
规格书 |
- | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 14A (Tc) | 10V | 380mOhm @ 7A, 10V | 4.5V @ 250µA | 51 nC @ 10 V | ±30V | 2297 pF @ 25 V | - | 28W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-262F |
|
|
AOWF15S60MOSFET N-CH 600V 15A TO262F Alpha & Omega Semiconductor Inc. |
0 | - |
|
规格书 |
aMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 15A (Tc) | 10V | 290mOhm @ 7.5A, 10V | 3.8V @ 250µA | 15.6 nC @ 10 V | ±30V | 717 pF @ 100 V | - | 27.8W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-262F |
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AOWF20S60MOSFET N-CH 600V 20A TO262F Alpha & Omega Semiconductor Inc. |
0 | - |
|
规格书 |
aMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 20A (Tc) | 10V | 199mOhm @ 10A, 10V | 4.1V @ 250µA | 19.8 nC @ 10 V | ±30V | 1038 pF @ 100 V | - | 28W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-262F |
