上传BOM
场效应晶体管（FETs）、MOSFETs
| 图片 | 型号 | 库存 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
FCH040N65S3-F155MOSFET N-CH 650V 65A TO247-3 |
1,010 |
|
规格书 |
SuperFET® III | TO-247-3 | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 650 V | 65A (Tc) | 10V | 40mOhm @ 32.5A, 10V | 4.5V @ 6.5mA | 136 nC @ 10 V | ±30V | 4740 pF @ 400 V | - | 417W (Tc) | -55°C ~ 150°C | - | - | Through Hole | TO-247-3 |
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|
SCT4062KEHRC111200V, 26A, 3-PIN THD, TRENCH-ST |
166 |
|
规格书 |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 26A (Tc) | 18V | 81mOhm @ 12A, 18V | 4.8V @ 6.45mA | 64 nC @ 18 V | +21V, -4V | 1498 pF @ 800 V | - | 115W | 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247N |
|
STW45NM50MOSFET N-CH 500V 45A TO247-3 |
491 |
|
规格书 |
MDmesh™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 45A (Tc) | 10V | 100mOhm @ 22.5A, 10V | 5V @ 250µA | 117 nC @ 10 V | ±30V | 3700 pF @ 25 V | - | 417W (Tc) | -65°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-3 |
|
FCH041N60EMOSFET N-CH 600V 77A TO247-3 |
430 |
|
规格书 |
SuperFET® II | TO-247-3 | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600 V | 77A (Tc) | 10V | 41mOhm @ 39A, 10V | 3.5V @ 250µA | 380 nC @ 10 V | ±20V | 13700 pF @ 100 V | - | 592W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-3 |
|
SIHG73N60E-GE3MOSFET N-CH 600V 73A TO247AC |
114 |
|
规格书 |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 73A (Tc) | 10V | 39mOhm @ 36A, 10V | 4V @ 250µA | 362 nC @ 10 V | ±30V | 7700 pF @ 100 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AC |
|
IMBG65R030M1HXTMA1SILICON CARBIDE MOSFET PG-TO263- |
924 |
|
规格书 |
CoolSiC™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 63A (Tc) | 18V | 42mOhm @ 29.5A, 18V | 5.7V @ 8.8mA | 49 nC @ 18 V | +23V, -5V | 1643 pF @ 400 V | - | 234W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-7-12 |
|
STW88N65M5-4MOSFET N-CH 650V 84A TO247-4L |
183 |
|
规格书 |
MDmesh™ M5 | TO-247-4 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 84A (Tc) | 10V | 29mOhm @ 42A, 10V | 5V @ 250µA | 204 nC @ 10 V | ±25V | 8825 pF @ 100 V | - | 450W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-247-4 |
|
C3M0120100KSICFET N-CH 1000V 22A TO247-4L |
2,476 |
|
规格书 |
C3M™ | TO-247-4 | Tube | Last Time Buy | N-Channel | SiCFET (Silicon Carbide) | 1000 V | 22A (Tc) | 15V | 155mOhm @ 15A, 15V | 3.5V @ 3mA | 21.5 nC @ 15 V | ±15V | 350 pF @ 600 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-4L |
|
C3M0120090J-TRSICFET N-CH 900V 22A D2PAK-7 |
1,756 |
|
规格书 |
C3M™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Last Time Buy | N-Channel | SiCFET (Silicon Carbide) | 900 V | 22A (Tc) | 15V | 155mOhm @ 15A, 15V | 3.5V @ 3mA | 17.3 nC @ 15 V | +18V, -8V | 350 pF @ 600 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263-7 |
|
TP65H070LDG-TR650 V 25 A GAN FET |
662 |
|
规格书 |
TP65H070L | 3-PowerDFN | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 25A (Tc) | 10V | 85mOhm @ 16A, 10V | 4.8V @ 700µA | 9.3 nC @ 10 V | ±20V | 600 pF @ 400 V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 3-PQFN (8x8) |
|
SCT3060ALGC11SICFET N-CH 650V 39A TO247N |
462 |
|
规格书 |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 39A (Tc) | 18V | 78mOhm @ 13A, 18V | 5.6V @ 6.67mA | 58 nC @ 18 V | +22V, -4V | 852 pF @ 500 V | - | 165W (Tc) | 175°C (TJ) | - | - | Through Hole | TO-247N |
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|
IXFX520N075T2MOSFET N-CH 75V 520A PLUS247-3 |
310 |
|
规格书 |
HiPerFET™, TrenchT2™ | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 520A (Tc) | 10V | 2.2mOhm @ 100A, 10V | 5V @ 8mA | 545 nC @ 10 V | ±20V | 41000 pF @ 25 V | - | 1250W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PLUS247™-3 |
|
IXFK520N075T2MOSFET N-CH 75V 520A TO264AA |
315 |
|
规格书 |
HiPerFET™, TrenchT2™ | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 520A (Tc) | 10V | 2.2mOhm @ 100A, 10V | 5V @ 8mA | 545 nC @ 10 V | ±20V | 41000 pF @ 25 V | - | 1250W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-264AA (IXFK) |
|
|
NVHL040N65S3FMOSFET N-CH 650V 65A TO247-3 |
573 |
|
规格书 |
SuperFET® III, FRFET® | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 65A (Tc) | 10V | 40mOhm @ 32.5A, 10V | 5V @ 2.1mA | 153 nC @ 10 V | ±30V | 5875 pF @ 400 V | - | 446W (Tc) | -55°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-3 |
|
FCH041N65F-F085MOSFET N-CH 650V 76A TO247-3 |
306 |
|
规格书 |
SuperFET® II | TO-247-3 | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 650 V | 76A (Tc) | 10V | 41mOhm @ 38A, 10V | 5V @ 250µA | 304 nC @ 10 V | ±20V | 13566 pF @ 25 V | - | 595W (Tc) | -55°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-3 |
|
|
IXFK360N10TMOSFET N-CH 100V 360A TO264AA |
242 |
|
规格书 |
HiPerFET™, Trench | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 360A (Tc) | 10V | 2.9mOhm @ 100A, 10V | 5V @ 3mA | 525 nC @ 10 V | ±20V | 33000 pF @ 25 V | - | 1250W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-264AA (IXFK) |
|
SCTH35N65G2V-7SICFET N-CH 650V 45A H2PAK-7 |
1,694 |
|
规格书 |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 45A (Tc) | 18V, 20V | 67mOhm @ 20A, 20V | 5V @ 1mA | 73 nC @ 20 V | +22V, -10V | 1370 pF @ 400 V | - | 208W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | H2PAK-7 |
|
SCT4045DRC15750V, 45M, 4-PIN THD, TRENCH-STR |
3,459 |
|
规格书 |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 34A (Tc) | 18V | 59mOhm @ 17A, 18V | 4.8V @ 8.89mA | 63 nC @ 18 V | +21V, -4V | 1460 pF @ 500 V | - | 115W | 175°C (TJ) | - | - | Through Hole | TO-247-4L |
|
MSC035SMA070B4TRANS SJT N-CH 700V 77A TO247-4 |
136 |
|
规格书 |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 700 V | 77A (Tc) | 20V | 44mOhm @ 30A, 20V | 2.7V @ 2mA (Typ) | 99 nC @ 20 V | +23V, -10V | 2010 pF @ 700 V | - | 283W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
|
|
IXTK120N65X2MOSFET N-CH 650V 120A TO264 |
221 |
|
规格书 |
Ultra X2 | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 120A (Tc) | 10V | 24mOhm @ 60A, 10V | 4.5V @ 8mA | 240 nC @ 10 V | ±30V | 13600 pF @ 25 V | - | 1250W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264 (IXTK) |
