场效应晶体管(FET)、MOSFET 阵列

    制造商 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    图片 型号 库存 价格 数量 规格书 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
    NXH004P120M3F2PTNG

    NXH004P120M3F2PTNG

    MOSFET 2N-CH 1200V 338A 36PIM

    onsemi

    40
    NXH004P120M3F2PTNG

    规格书

    - Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 338A (Tj) 5.5mOhm @ 200A, 18V 4.4V @ 120mA 876nC @ 20V 16410pF @ 800V 1.1kW (Tj) -40°C ~ 175°C (TJ) - - Chassis Mount 36-PIM (56.7x62.8)
    CCB021M12FM3T

    CCB021M12FM3T

    MOSFET 6N-CH 1200V 51A MODULE

    Wolfspeed, Inc.

    56
    CCB021M12FM3T

    规格书

    - Module Box Active Silicon Carbide (SiC) 6 N-Channel (3-Phase Bridge) - 1200V (1.2kV) 51A (Tj) 27.9mOhm @ 30A, 15V 3.6V @ 17.7mA 162nC @ 15V 4900pF @ 800V - -40°C ~ 150°C (TJ) - - Chassis Mount Module
    CAB008M12GM3T

    CAB008M12GM3T

    MOSFET 2N-CH 1200V 146A MODULE

    Wolfspeed, Inc.

    54
    CAB008M12GM3T

    规格书

    - Module Box Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 146A (Tj) 10.4mOhm @ 150A, 15V 3.6V @ 46mA 472nC @ 15V 13600pF @ 800V - -40°C ~ 150°C (TJ) - - Chassis Mount Module
    CAB7R5A23GM4

    CAB7R5A23GM4

    MOSFET 2N-CH 2300V 150A

    Wolfspeed, Inc.

    54
    CAB7R5A23GM4

    规格书

    - Module Box Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 2300V (2.3kV) 150A 10.5mOhm @ 160A, 15V 4V @ 76mA 590nC @ 15V 24400pF @ 1.5kV 510W -40°C ~ 150°C (TJ) - - Chassis Mount -
    CCB016M12GM3

    CCB016M12GM3

    MOSFET 6N-CH 1200V 50A MODULE

    Wolfspeed, Inc.

    38
    CCB016M12GM3

    规格书

    - Module Tray Active Silicon Carbide (SiC) 6 N-Channel - 1200V (1.2kV) 50A (Tj) 20.8mOhm @ 50A, 15V 3.9V @ 23mA 236nC @ 15V 6700pF @ 1000V 10mW -40°C ~ 150°C (TJ) - - Chassis Mount Module
    CAB006M12GM3T

    CAB006M12GM3T

    MOSFET 2N-CH 1200V 200A MODULE

    Wolfspeed, Inc.

    36
    CAB006M12GM3T

    规格书

    - Module Box Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 200A (Tj) 6.9mOhm @ 200A, 15V 3.6V @ 69mA 708nC @ 15V 20400pF @ 800V - -40°C ~ 150°C (TJ) - - Chassis Mount Module
    CCB016M12GM3T

    CCB016M12GM3T

    MOSFET 6N-CH 1200V 50A MODULE

    Wolfspeed, Inc.

    49
    CCB016M12GM3T

    规格书

    - Module Box Active Silicon Carbide (SiC) 6 N-Channel - 1200V (1.2kV) 50A (Tj) 20.8mOhm @ 50A, 15V 3.9V @ 23mA 236nC @ 15V 6700pF @ 1000V 10mW -40°C ~ 150°C (TJ) - - Chassis Mount Module
    CAB006A12GM3T

    CAB006A12GM3T

    MOSFET 2N-CH 1200V 200A MODULE

    Wolfspeed, Inc.

    39
    CAB006A12GM3T

    规格书

    - Module Box Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 200A (Tj) 6.9mOhm @ 200A, 15V 3.6V @ 69mA 708nC @ 15V 20400pF @ 800V - -40°C ~ 150°C (TJ) - - Chassis Mount Module
    FBG30N04CSH

    FBG30N04CSH

    MOSFET 2N-CH 300V 4A 4SMD

    EPC Space, LLC

    46
    FBG30N04CSH

    规格书

    eGaN® 4-SMD, No Lead Bulk Active GaNFET (Gallium Nitride) 2 N-Channel - 300V 4A (Tc) 404mOhm @ 4A, 5V 2.8V @ 600µA 2.6nC @ 5V 450pF @ 150V - -55°C ~ 150°C (TJ) - - Surface Mount 4-SMD
    CAB5R0A23GM4

    CAB5R0A23GM4

    MOSFET 2N-CH 2300V 150A

    Wolfspeed, Inc.

    30
    CAB5R0A23GM4

    规格书

    - Module Box Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 2300V (2.3kV) 150A 7mOhm @ 240A, 15V 4V @ 114mA 880nC @ 15V 36600pF @ 1.5kV 710W -40°C ~ 150°C (TJ) - - Chassis Mount -
    NTK3142PT1H-ON

    NTK3142PT1H-ON

    MOSFET P-CH

    onsemi

    100,800

    -

    * - Bulk Active - - - - - - - - - - - - - - -
    NTK3142PT1H

    NTK3142PT1H

    MOSFET P-CH

    Sanyo

    20,000
    NTK3142PT1H

    规格书

    * - Bulk Active - - - - - - - - - - - - - - -
    3LN04SS-TL-H-SY

    3LN04SS-TL-H-SY

    MOSFET N-CH

    Sanyo

    2,968,000

    -

    * - Bulk Active - - - - - - - - - - - - - - -
    EFC4601-M-TR

    EFC4601-M-TR

    MOSFET N-CH

    Sanyo

    2,700,000

    -

    * - Bulk Active - - - - - - - - - - - - - - -
    EFC4601-M-TR-ON

    EFC4601-M-TR-ON

    MOSFET N-CH

    onsemi

    1,895,000

    -

    * - Bulk Active - - - - - - - - - - - - - - -
    SCH2822-TL-E

    SCH2822-TL-E

    PCH+SBD 2.5V DRIVE SERIES

    onsemi

    170,000

    -

    * - Bulk Active - - - - - - - - - - - - - - -
    2SB808F-SPA-ON

    2SB808F-SPA-ON

    MOSFET N-CH

    onsemi

    35,003

    -

    * - Bulk Active - - - - - - - - - - - - - - -
    2SB808F-SPA

    2SB808F-SPA

    MOSFET N-CH

    Sanyo

    21,994
    2SB808F-SPA

    规格书

    * - Bulk Active - - - - - - - - - - - - - - -
    FDS6900AS-G

    FDS6900AS-G

    MOSFET 2N-CH 30V 6.9A/8.2A 8SOIC

    onsemi

    0

    -

    PowerTrench®, SyncFET™ 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 6.9A, 8.2A 27mOhm @ 6.9A, 10V 3V @ 250µA, 3V @ 1mA 15nC @ 10V 600pF @ 15V 900mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    5HP01M-TL-EX

    5HP01M-TL-EX

    MOSFET P-CH 50V 0.07A MCP3

    onsemi

    6,000
    5HP01M-TL-EX

    规格书

    * - Bulk Active - - - - - - - - - - - - - - -
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