场效应晶体管(FET)、MOSFET 阵列

    制造商 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    图片 型号 库存 价格 数量 规格书 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
    CSD88584Q5DCT

    CSD88584Q5DCT

    MOSFET 2N-CH 40V 22VSON-CLIP

    Texas Instruments

    2,567
    CSD88584Q5DCT

    规格书

    NexFET™ 22-PowerTFDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 40V - 0.95mOhm @ 30A, 10V 2.3V @ 250µA 88nC @ 4.5V 12400pF @ 20V 12W -55°C ~ 150°C (TJ) - - Surface Mount 22-VSON-CLIP (5x6)
    NVMFD5C446NLWFT1G

    NVMFD5C446NLWFT1G

    MOSFET 2N-CH 40V 25A 8DFN

    onsemi

    785
    NVMFD5C446NLWFT1G

    规格书

    - 8-PowerTDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 40V 25A (Ta), 145A (Tc) 2.65mOhm @ 20A, 10V 2.2V @ 90µA 25nC @ 4.5V 3170pF @ 25V 3.5W (Ta) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)
    ISG0616N10NM5HSCATMA1

    ISG0616N10NM5HSCATMA1

    MOSFET 2N-CH 100V 19A 10WHITFN

    Infineon Technologies

    2,464
    ISG0616N10NM5HSCATMA1

    规格书

    OptiMOS™ 5 10-PowerWDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 100V 19A (Ta), 139A (Tc) 4mOhm @ 50A, 10V 3.8V @ 85µA 78nC @ 10V 4800pF @ 50V 3W (Ta), 167W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-WHITFN-10-1
    ALD111933SAL

    ALD111933SAL

    MOSFET 2N-CH 10.6V 8SOIC

    Advanced Linear Devices Inc.

    909
    ALD111933SAL

    规格书

    EPAD® 8-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair - 10.6V - 500Ohm @ 5.9V 3.35V @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Surface Mount 8-SOIC
    ALD1105PBL

    ALD1105PBL

    MOSFET 2N/2P-CH 10.6V 14PDIP

    Advanced Linear Devices Inc.

    269
    ALD1105PBL

    规格书

    - 14-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 2 N and 2 P-Channel Matched Pair - 10.6V - 500Ohm @ 5V 1V @ 1µA - 3pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Through Hole 14-PDIP
    ALD1107PBL

    ALD1107PBL

    MOSFET 4P-CH 10.6V 14PDIP

    Advanced Linear Devices Inc.

    223
    ALD1107PBL

    规格书

    - 14-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 4 P-Channel, Matched Pair - 10.6V - 1800Ohm @ 5V 1.2V @ 1µA - 3pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Through Hole 14-PDIP
    EPC2104

    EPC2104

    MOSFET 2N-CH 100V 23A DIE

    EPC

    3,154
    EPC2104

    规格书

    eGaN® Die Tape & Reel (TR) Active GaNFET (Gallium Nitride) 2 N-Channel (Half Bridge) - 100V 23A 6.3mOhm @ 20A, 5V 2.5V @ 5.5mA 7nC @ 5V 800pF @ 50V - -40°C ~ 150°C (TJ) - - Surface Mount Die
    NXH011T120M3F2PTHG

    NXH011T120M3F2PTHG

    MOSFET 4N-CH 1200V 91A 29PIM

    onsemi

    28
    NXH011T120M3F2PTHG

    规格书

    - Module Tray Active Silicon Carbide (SiC) 4 N-Channel (Solar Inverter) - 1200V (1.2kV) 91A (Tc) 16mOhm @ 70A, 18V 4.4V @ 40mA 306nC @ 20V 6331pF @ 800V 272W (Tj) -40°C ~ 175°C (TJ) - - Chassis Mount 29-PIM (56.7x42.5)
    FF8MR12W1M1HB11BPSA1

    FF8MR12W1M1HB11BPSA1

    MOSFET 1200V AG-EASY1B

    Infineon Technologies

    34
    FF8MR12W1M1HB11BPSA1

    规格书

    CoolSiC™ Module Tray Active Silicon Carbide (SiC) - - 1200V (1.2kV) - - - - - - - - - Chassis Mount AG-EASY1B
    NXH004P120M3F2PTHG

    NXH004P120M3F2PTHG

    MOSFET 2N-CH 1200V 284A 36PIM

    onsemi

    23
    NXH004P120M3F2PTHG

    规格书

    - Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 284A (Tc) 5.5mOhm @ 200A, 18V 4.4V @ 120mA 876nC @ 20V 16410pF @ 800V 785W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount 36-PIM (56.7x62.8)
    CAB008M12GM3

    CAB008M12GM3

    SIC 2N-CH 1200V

    Wolfspeed, Inc.

    13
    CAB008M12GM3

    规格书

    WolfPACK™ Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) - 10.4mOhm @ 150A, 15V 3.6V @ 46mA 472nC @ 15V 13600pF @ 800V - -40°C ~ 150°C (TJ) - - Chassis Mount -
    EPC7018DC

    EPC7018DC

    MOSFET 2N-CH 100V 70A 4SMD

    EPC Space, LLC

    32
    EPC7018DC

    规格书

    eGaN® 4-SMD, No Lead Bulk Active GaNFET (Gallium Nitride) 2 N-Channel (Half Bridge) - 100V 70A (Tc) 6.5mOhm @ 70A, 5V 2.5V @ 5mA 17nC @ 5V 1700pF @ 50V - -55°C ~ 150°C (TJ) - - Surface Mount 4-SMD
    BSS138AKDW-TP

    BSS138AKDW-TP

    MOSFET 2N-CH 50V 0.22A SOT363

    Micro Commercial Co

    9,857

    -

    - 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 50V 220mA 3Ohm @ 500mA, 10V 1.45V @ 250µA - 22800pF @ 25V 350mW -55°C ~ 150°C (TJ) - - Surface Mount SOT-363
    UM6X1NA-TP

    UM6X1NA-TP

    MOSFET 2N-CH 30V 0.5A SOT563

    Micro Commercial Co

    4,780
    UM6X1NA-TP

    规格书

    - SOT-563, SOT-666 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 30V 500mA 750mOhm @ 300mA, 10V 1.5V @ 250µA 1.28nC @ 10V 28pF @ 15V 150mW -55°C ~ 150°C (TJ) - - Surface Mount SOT-563
    DMC2991UDJ-7B

    DMC2991UDJ-7B

    MOSFET N/P-CH 20V 0.5A SOT963

    Diodes Incorporated

    6,770
    DMC2991UDJ-7B

    规格书

    - SOT-963 Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Complementary - 20V 500mA (Ta), 360mA (Ta) 990mOhm @ 100mA, 4.5V, 1.9Ohm @ 100mA, 4.5V 1V @ 250µA 0.35nC @ 4.5V, 0.3nC @ 4.5V 21.5pF @ 15V, 17pF @ 16V 380mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-963
    DMN63D8LDWQ-7

    DMN63D8LDWQ-7

    MOSFET 2N-CH 30V 0.22A SOT363

    Diodes Incorporated

    6,003
    DMN63D8LDWQ-7

    规格书

    - 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Not For New Designs MOSFET (Metal Oxide) 2 N-Channel (Dual) - 30V 220mA 2.8Ohm @ 250mA, 10V 1.5V @ 250µA 0.87nC @ 10V 22pF @ 25V 300mW -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount SOT-363
    SSM6N44FU,LF

    SSM6N44FU,LF

    MOSFET 2N-CH 30V 0.1A US6

    Toshiba Semiconductor and Storage

    14,091
    SSM6N44FU,LF

    规格书

    - 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 30V 100mA (Ta) 4Ohm @ 10mA, 4V 1.5V @ 100µA - 8.5pF @ 3V 200mW (Ta) 150°C - - Surface Mount US6
    SSM6N16FE,L3F

    SSM6N16FE,L3F

    MOSFET 2N-CH 20V 0.1A ES6

    Toshiba Semiconductor and Storage

    7,626
    SSM6N16FE,L3F

    规格书

    - SOT-563, SOT-666 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 20V 100mA (Ta) 3Ohm @ 10mA, 4V 1.1V @ 100µA - 9.3pF @ 3V 150mW (Ta) 150°C - - Surface Mount ES6
    DMN33D8LDW-7

    DMN33D8LDW-7

    MOSFET 2N-CH 30V 0.25A SOT363

    Diodes Incorporated

    18,995
    DMN33D8LDW-7

    规格书

    - 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 30V 250mA 2.4Ohm @ 250mA, 10V 1.5V @ 100µA 1.23nC @ 10V 48pF @ 5V 350mW -55°C ~ 150°C (TJ) - - Surface Mount SOT-363
    SSM6L35FE,LM

    SSM6L35FE,LM

    MOSFET N/P-CH 20V 0.18A ES6

    Toshiba Semiconductor and Storage

    18,559
    SSM6L35FE,LM

    规格书

    - SOT-563, SOT-666 Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 20V 180mA, 100mA 3Ohm @ 50mA, 4V 1V @ 1mA - 9.5pF @ 3V 150mW 150°C (TJ) - - Surface Mount ES6
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