场效应晶体管(FET)、MOSFET 阵列

    制造商 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    图片 型号 库存 价格 数量 规格书 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
    CSD75208W1015T

    CSD75208W1015T

    MOSFET 2P-CH 20V 1.6A 6DSBGA

    Texas Instruments

    4,477
    CSD75208W1015T

    规格书

    NexFET™ 6-UFBGA, DSBGA Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) Common Source Logic Level Gate 20V 1.6A 68mOhm @ 1A, 4.5V 1.1V @ 250µA 2.5nC @ 4.5V 410pF @ 10V 750mW -55°C ~ 150°C (TJ) - - Surface Mount 6-DSBGA (1x1.5)
    CSD87352Q5D

    CSD87352Q5D

    MOSFET 2N-CH 30V 25A 8LSON

    Texas Instruments

    15,568
    CSD87352Q5D

    规格书

    NexFET™ 8-PowerLDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 25A - 1.15V @ 250µA 12.5nC @ 4.5V 1800pF @ 15V 8.5W -55°C ~ 150°C (TJ) - - Surface Mount 8-LSON (5x6)
    CSD85302LT

    CSD85302LT

    MOSFET 2N-CH 4PICOSTAR

    Texas Instruments

    3,995
    CSD85302LT

    规格书

    NexFET™ 4-XFLGA Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Common Drain - - - - - 7.8nC @ 4.5V - 1.7W -55°C ~ 150°C (TJ) - - Surface Mount 4-Picostar (1.31x1.31)
    CSD87335Q3DT

    CSD87335Q3DT

    MOSFET 2N-CH 30V 25A 8LSON

    Texas Instruments

    1,142
    CSD87335Q3DT

    规格书

    NexFET™ 8-PowerLDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 30V 25A - 1.9V @ 250µA 7.4nC @ 4.5V 1050pF @ 15V 6W -55°C ~ 150°C (TJ) - - Surface Mount 8-LSON (3.3x3.3)
    CSD87312Q3E

    CSD87312Q3E

    MOSFET 2N-CH 30V 27A 8VSON

    Texas Instruments

    1,320
    CSD87312Q3E

    规格书

    NexFET™ 8-PowerTDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Common Source Logic Level Gate 30V 27A 33mOhm @ 7A , 8V 1.3V @ 250µA 8.2nC @ 4.5V 1250pF @ 15V 2.5W -55°C ~ 150°C (TJ) - - Surface Mount 8-VSON (3.3x3.3)
    CSD88537NDT

    CSD88537NDT

    MOSFET 2N-CH 60V 15A 8SOIC

    Texas Instruments

    4,375
    CSD88537NDT

    规格书

    NexFET™ 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 60V 15A 15mOhm @ 8A, 10V 3.6V @ 250µA 18nC @ 10V 1400pF @ 30V 2.1W -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    CSD87355Q5D

    CSD87355Q5D

    MOSFET 2N-CH 30V 8LSON

    Texas Instruments

    2,102
    CSD87355Q5D

    规格书

    NexFET™ 8-PowerLDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Asymmetrical - 30V - - 1.9V @ 250µA 13.7nC @ 4.5V 1860pF @ 15V 12W -55°C ~ 150°C (TJ) - - Surface Mount 8-LSON (5x6)
    CSD87353Q5D

    CSD87353Q5D

    MOSFET 2N-CH 30V 40A 8LSON

    Texas Instruments

    19,597
    CSD87353Q5D

    规格书

    NexFET™ 8-PowerLDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) Logic Level Gate 30V 40A - 2.1V @ 250µA 19nC @ 4.5V 3190pF @ 15V 12W -55°C ~ 150°C (TJ) - - Surface Mount 8-LSON (5x6)
    TPS1120DR

    TPS1120DR

    MOSFET 2P-CH 15V 1.17A 8SOIC

    Texas Instruments

    718
    TPS1120DR

    规格书

    - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 15V 1.17A 180mOhm @ 1.5A, 10V 1.5V @ 250µA 5.45nC @ 10V - 840mW -40°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    CSD87313DMST

    CSD87313DMST

    MOSFET 2N-CH 30V 8WSON

    Texas Instruments

    1,161
    CSD87313DMST

    规格书

    NexFET™ 8-PowerWDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Common Drain - 30V - - 1.2V @ 250µA 28nC @ 4.5V 4290pF @ 15V 2.7W -55°C ~ 150°C (TJ) - - Surface Mount 8-WSON (3.3x3.3)
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