场效应晶体管(FET)、MOSFET 阵列

    制造商 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    图片 型号 库存 价格 数量 规格书 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
    TT8J3TR

    TT8J3TR

    MOSFET 2P-CH 30V 2.5A 8TSST

    Rohm Semiconductor

    29
    TT8J3TR

    规格书

    - 8-SMD, Flat Leads Tape & Reel (TR) Last Time Buy - 2 P-Channel (Dual) - 30V 2.5A 84mOhm @ 2.5A, 10V 2.5V @ 1mA 4.8nC @ 5V 460pF @ 15V 1.25W 150°C (TJ) - - Surface Mount 8-TSST
    SP8K2TB

    SP8K2TB

    MOSFET 2N-CH 30V 6A 8SOP

    Rohm Semiconductor

    40
    SP8K2TB

    规格书

    - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 6A 30mOhm @ 6A, 10V 2.5V @ 1mA 10.1nC @ 5V 520pF @ 10V 2W 150°C (TJ) - - Surface Mount 8-SOP
    QH8JC5TCR

    QH8JC5TCR

    MOSFET 2P-CH 60V 3.5A TSMT8

    Rohm Semiconductor

    0
    QH8JC5TCR

    规格书

    - 8-SMD, Flat Leads Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) - 60V 3.5A (Ta) 91mOhm @ 3.5A, 10V 2.5V @ 1mA 17.3nC @ 10V 850pF @ 30V 1.1W (Ta) 150°C (TJ) - - Surface Mount TSMT8
    UT6ME5TCR

    UT6ME5TCR

    MOSFET N/P-CH 100V 2A HUML2020L8

    Rohm Semiconductor

    0
    UT6ME5TCR

    规格书

    - 6-PowerUDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel - 100V 2A (Ta), 1A (Ta) 207mOhm @ 2A, 10V, 840mOhm @ 1A, 10V 2.5V @ 1mA 2.8nC @ 10V, 6.7nC @ 10V 90pF @ 50V 2W (Ta) 150°C (TJ) - - Surface Mount HUML2020L8
    BSM600D12P4G103

    BSM600D12P4G103

    MOSFET 2N-CH 1200V 567A MODULE

    Rohm Semiconductor

    0
    BSM600D12P4G103

    规格书

    - Module Box Active Silicon Carbide (SiC) 2 N-Channel - 1200V (1.2kV) 567A (Tc) - 4.8V @ 291.2mA - 59000pF @ 10V 1.78kW (Tc) 175°C (TJ) - - Chassis Mount Module
    US6M2GTR

    US6M2GTR

    MOSFET N/P-CH 30V/20V 1.5A TUMT6

    Rohm Semiconductor

    0
    US6M2GTR

    规格书

    - 6-SMD, Flat Leads Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel - 30V, 20V 1.5A, 1A 240mOhm @ 1.5A, 4.5V, 390mOhm @ 1A, 4.5V 1.5V @ 1mA, 2V @ 1mA 2.2nC @ 4.5V, 2.1nC @ 4.5V 80pF @ 10V, 150pF @ 10V 1W 150°C - - Surface Mount TUMT6
    SP8J5FRATB

    SP8J5FRATB

    MOSFET 2P-CH 7A 8SOP

    Rohm Semiconductor

    0
    SP8J5FRATB

    规格书

    - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Not For New Designs MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate, 4V Drive - 7A (Ta) 28mOhm @ 7A, 10V 2.5V @ 1mA - - - 150°C Automotive AEC-Q101 Surface Mount 8-SOP
    HP8M31TB1

    HP8M31TB1

    MOSFET N/P-CH 60V 8.5A 8HSOP

    Rohm Semiconductor

    1
    HP8M31TB1

    规格书

    - 8-PowerTDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel - 60V 8.5A (Ta) 65mOhm @ 8.5A, 10V, 70mOhm @ 8.5A, 10V 3V @ 1mA 12.3nC @ 10V, 38nC @ 10V 470pF @ 30V, 2300pF @ 30V 3W (Ta) 150°C (TJ) - - Surface Mount 8-HSOP
    BSM180D12P2C101

    BSM180D12P2C101

    MOSFET 2N-CH 1200V 204A MODULE

    Rohm Semiconductor

    1
    BSM180D12P2C101

    规格书

    - Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 204A (Tc) - 4V @ 35.2mA - 23000pF @ 10V 1130W -40°C ~ 150°C (TJ) - - - Module
    SH8KE5TB1

    SH8KE5TB1

    100V 2.5A, DUAL NCH+NCH, SOP8, P

    Rohm Semiconductor

    0

    -

    * - Tape & Reel (TR) Active - - - - - - - - - - - - - - -
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