场效应晶体管(FET)、MOSFET 阵列

    制造商 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    图片 型号 库存 价格 数量 规格书 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
    EM6K33T2R

    EM6K33T2R

    MOSFET 2N-CH 50V 0.2A EMT6

    Rohm Semiconductor

    38,646
    EM6K33T2R

    规格书

    - SOT-563, SOT-666 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate, 1.2V Drive 50V 200mA 2.2Ohm @ 200mA, 4.5V 1V @ 1mA - 25pF @ 10V 150mW 150°C (TJ) - - Surface Mount EMT6
    EM6K7T2CR

    EM6K7T2CR

    MOSFET 2N-CH 20V 0.2A EMT6

    Rohm Semiconductor

    15,580
    EM6K7T2CR

    规格书

    - SOT-563, SOT-666 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 20V 200mA (Ta) 1.2Ohm @ 200mA, 2.5V 1V @ 1mA - 25pF @ 10V 150mW 150°C (TJ) - - Surface Mount EMT6
    EM6K7T2R

    EM6K7T2R

    MOSFET 2N-CH 20V 0.2A EMT6

    Rohm Semiconductor

    3,067
    EM6K7T2R

    规格书

    - SOT-563, SOT-666 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 20V 200mA 1.2Ohm @ 200mA, 2.5V 1V @ 1mA - 25pF @ 10V 150mW 150°C (TJ) - - Surface Mount EMT6
    EM6J1T2R

    EM6J1T2R

    MOSFET 2P-CH 20V 0.2A EMT6

    Rohm Semiconductor

    16,460
    EM6J1T2R

    规格书

    - SOT-563, SOT-666 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 20V 200mA 1.2Ohm @ 200mA, 4.5V 1V @ 100µA 1.4nC @ 4.5V 115pF @ 10V 150mW 150°C (TJ) - - Surface Mount EMT6
    EM6K1T2R

    EM6K1T2R

    MOSFET 2N-CH 30V 0.1A EMT6

    Rohm Semiconductor

    24,481
    EM6K1T2R

    规格书

    - SOT-563, SOT-666 Tape & Reel (TR) Not For New Designs MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 100mA 8Ohm @ 10mA, 4V 1.5V @ 100µA - 13pF @ 5V 150mW 150°C (TJ) - - Surface Mount EMT6
    UM6J1NTN

    UM6J1NTN

    MOSFET 2P-CH 30V 0.2A UMT6

    Rohm Semiconductor

    7,815
    UM6J1NTN

    规格书

    - 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 30V 200mA 1.4Ohm @ 200mA, 10V 2.5V @ 1mA - 30pF @ 10V 150mW 150°C (TJ) - - Surface Mount UMT6
    EM6K31T2R

    EM6K31T2R

    MOSFET 2N-CH 60V 0.25A EMT6

    Rohm Semiconductor

    21,842
    EM6K31T2R

    规格书

    - SOT-563, SOT-666 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 60V 250mA 2.4Ohm @ 250mA, 10V 2.3V @ 1mA - 15pF @ 25V 150mW 150°C (TJ) - - Surface Mount EMT6
    QS6M3TR

    QS6M3TR

    MOSFET N/P-CH 30V/20V 1.5A TSMT6

    Rohm Semiconductor

    11,938
    QS6M3TR

    规格书

    - SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Not For New Designs MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 30V, 20V 1.5A 230mOhm @ 1.5A, 4.5V 1.5V @ 1mA 1.6nC @ 4.5V 80pF @ 10V 1.25W 150°C (TJ) - - Surface Mount TSMT6 (SC-95)
    UT6MA2TCR

    UT6MA2TCR

    MOSFET N/P-CH 30V 4A HUML2020L8

    Rohm Semiconductor

    31,477
    UT6MA2TCR

    规格书

    - 6-PowerUDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel - 30V 4A (Ta) 46mOhm @ 4A, 10V, 70mOhm @ 4A, 10V 2.5V @ 1mA 4.3nC @ 10V, 6.7nC @ 10V 180pF @ 15V, 305pF @ 15V 2W (Ta) 150°C (TJ) - - Surface Mount HUML2020L8
    US6M11TR

    US6M11TR

    MOSFET N/P-CH 20V/12V 1.5A TUMT6

    Rohm Semiconductor

    13,020
    US6M11TR

    规格书

    - 6-SMD, Flat Leads Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 20V, 12V 1.5A, 1.3A 180mOhm @ 1.5A, 4.5V 1V @ 1mA 1.8nC @ 4.5V 110pF @ 10V 1W 150°C (TJ) - - Surface Mount TUMT6
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