场效应晶体管(FET)、MOSFET 阵列

    制造商 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    图片 型号 库存 价格 数量 规格书 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
    IPG20N06S415ATMA1

    IPG20N06S415ATMA1

    MOSFET 2N-CH 60V 20A 8TDSON

    Infineon Technologies

    0
    IPG20N06S415ATMA1

    规格书

    OptiMOS™ 8-PowerVDFN Tape & Reel (TR) Discontinued at Digi-Key MOSFET (Metal Oxide) 2 N-Channel (Dual) - 60V 20A 15.5mOhm @ 17A, 10V 4V @ 20µA 29nC @ 10V 2260pF @ 25V 50W -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-TDSON-8-4
    IPG20N06S4L14ATMA1

    IPG20N06S4L14ATMA1

    MOSFET 2N-CH 60V 20A 8TDSON

    Infineon Technologies

    0
    IPG20N06S4L14ATMA1

    规格书

    OptiMOS™ 8-PowerVDFN Tape & Reel (TR) Discontinued at Digi-Key MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 60V 20A 13.7mOhm @ 17A, 10V 2.2V @ 20µA 39nC @ 10V 2890pF @ 25V 50W -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-TDSON-8-4
    BSD340NH6327XTSA1

    BSD340NH6327XTSA1

    MOSFET P-CH SOT363-6

    Infineon Technologies

    0
    BSD340NH6327XTSA1

    规格书

    OptiMOS™ 6-VSSOP, SC-88, SOT-363 Tape & Reel (TR) Obsolete - - - - - - - - - - - Automotive AEC-Q101 Surface Mount PG-SOT363-6
    BSZ0909NDXTMA1

    BSZ0909NDXTMA1

    MOSFET 2N-CH 30V 20A WISON-8

    Infineon Technologies

    0
    BSZ0909NDXTMA1

    规格书

    OptiMOS™ 8-PowerVDFN Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate, 4.5V Drive 30V 20A (Tc) 18mOhm @ 9A, 10V 2V @ 250µA 2.6nC @ 4.5V 360pF @ 15V 17W -55°C ~ 150°C (TJ) - - Surface Mount PG-WISON-8
    BSL806NH6327XTSA1

    BSL806NH6327XTSA1

    MOSFET 2N-CH 20V 2.3A TSOP6-6

    Infineon Technologies

    0
    BSL806NH6327XTSA1

    规格书

    OptiMOS™ SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate, 1.8V Drive 20V 2.3A (Ta) 57mOhm @ 2.3A, 2.5V 750mV @ 11µA 1.7nC @ 2.5V 259pF @ 10V 500mW -55°C ~ 150°C (TJ) - - Surface Mount PG-TSOP6-6
    FF11MR12W1M1B11BOMA1

    FF11MR12W1M1B11BOMA1

    MOSFET 2N-CH 1200V 100A MODULE

    Infineon Technologies

    0
    FF11MR12W1M1B11BOMA1

    规格书

    CoolSiC™+ Module Tray Obsolete Silicon Carbide (SiC) 2 N-Channel (Dual) - 1200V (1.2kV) 100A 11mOhm @ 100A, 15V 5.55V @ 40mA 250nC @ 15V 7950pF @ 800V - -40°C ~ 150°C (TJ) - - Chassis Mount Module
    BSZ0910NDXTMA1

    BSZ0910NDXTMA1

    MOSFET 2N-CH 30V 9.5A WISON-8

    Infineon Technologies

    0
    BSZ0910NDXTMA1

    规格书

    OptiMOS™ 8-PowerVDFN Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate, 4.5V Drive 30V 9.5A (Ta), 25A (Tc) 9.5mOhm @ 9A, 10V 2V @ 250µA 5.6nC @ 4.5V 800pF @ 15V 1.9W (Ta), 31W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-WISON-8
    FF8MR12W2M1B11BOMA1

    FF8MR12W2M1B11BOMA1

    MOSFET 2N-CH 1200V AG-EASY2BM-2

    Infineon Technologies

    0
    FF8MR12W2M1B11BOMA1

    规格书

    CoolSiC™+ Module Tray Obsolete Silicon Carbide (SiC) 2 N-Channel (Dual) - 1200V (1.2kV) 150A (Tj) 7.5mOhm @ 150A, 15V (Typ) 5.55V @ 60mA 372nC @ 15V 11000pF @ 800V - -40°C ~ 150°C (TJ) - - Chassis Mount AG-EASY2BM-2
    FF6MR12W2M1B11BOMA1

    FF6MR12W2M1B11BOMA1

    MOSFET 2N-CH 1200V AG-EASY2BM-2

    Infineon Technologies

    0
    FF6MR12W2M1B11BOMA1

    规格书

    CoolSiC™+ Module Tray Obsolete Silicon Carbide (SiC) 2 N-Channel (Dual) - 1200V (1.2kV) 200A (Tj) 5.63mOhm @ 200A, 15V 5.55V @ 80mA 496nC @ 15V 14700pF @ 800V - -40°C ~ 150°C (TJ) - - Chassis Mount AG-EASY2BM-2
    DF11MR12W1M1B11BPSA1

    DF11MR12W1M1B11BPSA1

    MOSFET 2N-CH 1200V AG-EASY1BM-2

    Infineon Technologies

    0
    DF11MR12W1M1B11BPSA1

    规格书

    CoolSiC™+ Module Tray Obsolete Silicon Carbide (SiC) 2 N-Channel (Dual) - 1200V (1.2kV) 50A (Tj) 22.5mOhm @ 50A, 15V 5.55V @ 20mA 124nC @ 15V 3680pF @ 800V - -40°C ~ 150°C (TJ) - - Chassis Mount AG-EASY1BM-2
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